Central . CXTA27 Semiconductor Corp. NPN DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXTA27 type is a NPN Silicon Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high voltage. SOT-89 CASE MAXIMUM RATINGS (Ta=25C) SYMBOL UNITS Collector-Emitter Voltage VcES 60 V Emitter-Base Voltage VEBO 10 Vv Collector Current Ic 500 mA Power Dissipation Pp 1.2 Ww Operating and Storage Junction Temperature TT stg -65 to +150 C Thermal Resistance OjA 104 C/W ELECTRICAL CHARACTERISTICS: (T,=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO Vcp=50V 100 nA Ices VcpE=50V 500 nA lEBO VepR=10V 100 nA BycBo Ic=100nA 60 V BycES Ic=100nA 60 V VCE(SAT) Ic=100mA, Ip=0.1mA 1.5 V VBE(ON) VcE=5.0V, Ic=100MmA 2.0 V hre VoE=5.0V, Io=10mA 10,000 hee VoE=5.0V, IG=100mMA 10,000 fy Voe=5.0V, lo=10mA, f=100MHz 125 MHz 374All dimensions in inches (mm). .173(4.39) -181(4.60) ,.055(1.40) .063(1.60) 063(1.60) "071(1.80) .154(3.91) 092(2.94) .185(4.19) -100(2.54) eo | | 1 ||/2|[}3 ______- .015(0.38) .015(0.38) .031(0.80) -o4 sat (083) 7016(0.41) 1 [ -039(1.00) .059(1.50) .013(0.33) _ .019(0.4B) .118(3.00) LEAD CODE: 1) EMITTER 2) COLLECTOR 3) BASE ere SHEET 375