MCT2/ MCT2E
Document Number 83731
Rev. 1.4, 26-Oct-04
Vishay Semiconductors
www.vishay.com
1
i179004i179004
1
2
3
6
5
4
B
C
E
A
C
NC
Pb
Pb-free
e3
Optocoupler, Phototransistor Output, With Base Connection
Features
• Interfaces with common logic families
• Input-output coupling capacitance < 0.5 pF
• Industry Standard Dual-in line 6-pin package
• 5300 VRMS isolation test voltage
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
• CSA 93751
• BSI IEC60950 IEC60065
Applications
AC mains detection
Reed relay driving
Switch mode power supply feedback
Telephone ring detection
Logic ground isolation
Logic coupling with high frequency noise rejection
Description
Standard Single Channel Phototransistor Couplers.
The MCT2/ MCTE family is an Industry Standard Sin-
gle Channel Phototransistor .
Each optocoupler consists of gallium arsenide infra-
red LED and a silicon NPN phototransistor.
These couplers are Underwriters Laboratories (UL)
listed to comply with a 5300 VRMS isolation test volt-
age.
This isolation performance is accomplished through
Vishay double molding isolation manufacturing pro-
cess. Compliance to DIN EN 60747-5-2(VDE0884)/
DIN EN 60747-5-5 pending partial discharge isolation
specification is available for these families by ordering
option 1.
These isolation processes and the Vishay ISO9001
quality program results in the highest isolation perfor-
mance available for a commercial plastic phototrans-
istor optocoupler.
The devices are available in lead formed configura-
tion suitable for surface mounting and are available
either on tape and reel, or in standard tube shipping
containers.
Footnotes
Designing with data sheet is covered in Application Note 45.
Order Information
For additional information on the available options refer to
Option Information.
Part Remarks
MCT2 CTR 60 (> 20) %, DIP-6
MCT2E CTR 60 (> 20) %, DIP-6
MCT2-X009 CTR 60 (> 20) %, SMD-6 (option 9)
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2
Document Number 83731
Rev. 1.4, 26-Oct-04
MCT2/ MCT2E
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Output
Coupler
Parameter Test condition Symbol Value Unit
Reverse voltage VR6.0 V
Forward current IF60 mA
Surge current t ≤ 10 µsI
FSM 2.5 A
Power dissipation Pdiss 100 mW
Parameter Test condition Symbol Value Unit
Collector-emitter breakdown VCEO 70 V
Emitter-base breakdown
voltage
BVEBO 7.0 V
Collector current IC50 mA
t < 1.0 ms IC100 mA
Power dissipation Pdiss 150 mW
Parameter Test condition Symbol Value Unit
Isolation test voltage VISO 5300 VRMS
Creepage ≥ 7.0 mm
Clearance ≥ 7.0 mm
Isolation thickness between
emitter and detector
≥ 0.4 mm
Comparative tracking index per
DIN IEC 112/VDE0303,part 1
175
Isolation resistance VIO = 500 V, Tamb = 25 °C RIO 1012 Ω
VIO = 500 V, Tamb = 100 °C RIO 1011 Ω
Storage temperature Tstg - 55 to + 150 °C
Operating temperature Tstg - 55 to + 100 °C
Junction temperature Tj100 °C
Soldering temperature max. 10 s dip soldering:
distance to seating plane
≥ 1.5 mm
Tsld 260 °C
MCT2/ MCT2E
Document Number 83731
Rev. 1.4, 26-Oct-04
Vishay Semiconductors
www.vishay.com
3
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Coupler
Current Transfer Ratio
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage IF = 20 mA VF1.1 1.5 V
Reverse current VR = 3.0 V IR10 µA
Capacitance VR = 0, f = 1.0 MHz CO25 pF
Parameter Test condition Symbol Min Ty p. Max Unit
Collector-emitter breakdown
voltage
IC = 1.0 mA, IF = 0 mA BVCEO 30 V
Emitter-collector breakdown
voltage
IE = 100 µA, IF = 0 mA BVECO 7.0 V
Collector-base breakdown
voltage
IC = 10 µA, IF = 0 mA BVCBO 70 V
Collector-emitter leakage
current
VCE = 10 V, IF = 0 mA ICEO 5.0 50 nA
Collector-base leakage current VCE = 10 V, IF = 0 mA ICBO 20 nA
Collector-emitter capacitance VCE = 0 CCE 10 pF
Parameter Test condition Symbol Min Ty p. Max Unit
Resistance, input to output RIO 100 GΩ
Capacitance (input-output) CIO 0.5 pF
Parameter Test condition Symbol Min Ty p. Max Unit
DC Current Transfer Ratio VCE = 10 V, IF = 10 mA CTRDC 20 60 %
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4
Document Number 83731
Rev. 1.4, 26-Oct-04
MCT2/ MCT2E
Vishay Semiconductors
Switching Characteristics
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Parameter Test condition Symbol Min Typ. Max Unit
Switching time IC = 2 mA, RL = 100 Ω,
VCE = 10 V
ton, toff 10 µs
Figure 1. Forward Voltage vs. Forward Current
Figure 2. Normalized Non-Saturated and Saturated CTR vs. LED
Current
i4n25_01
100101.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
I
F
- Forward Current - mA
V
F
- Forward Voltage - V
T
A
=–55°C
T
A
=25°C
T
A
=85°C
i4n25_02
Normalized to:
0.0
0.5
1.0
1.5
0 1 10 100
I
F
- LED Current - mA
NCTR
NCTR(SAT)
NCTR - Normlized CTR
CTRce(sat) Vce=0.4 V
Vce=10 V, I
F
=10 mA, T
A
=25°C
T
A
=25°C
Figure 3. Normalized Non-saturated and Saturated CTR vs. LED
Current
Figure 4. Normalized Non-saturated and saturated CTR vs. LED
Current
i4n25_03
100101.1
0.0
0.5
1.0
1.5
I
F
- LED Current - mA
NCTR - Normalized CTR
Normalized to:
CTRce(sat) Vce=0.4 V
Vce=10 V, I
F
=10 mA, T
A
=25°C
NCTR
NCTR(SAT)
T
A
=50°C
i4n25_04
100101.1
0.0
0.5
1.0
1.5
I
F
- LED Current - mA
NCTR - Normalized CTR
Normalized to:
CTRce(sat) Vce=0.4 V
Vce=10 V, I
F
=10 mA, T
A
=25°C
NCTR
NCTR(SAT)
T
A
=70°C
MCT2/ MCT2E
Document Number 83731
Rev. 1.4, 26-Oct-04
Vishay Semiconductors
www.vishay.com
5
Figure 5. Normalized Non-saturated and saturated CTR vs. LED
Current
Figure 6. Collector-Emitter Current vs. Temperature and LED
Current
Figure 7. Collector-Emitter Leakage Current vs.Temp.
i4n25_05
100101.1
0.0
0.5
1.0
1.5
I
F
- LED Current - mA
NCTR - Normalized CTR
Normalized to:
CTRce(sat) Vce = 0.4 V
Vce=10 V, I
F
=10 mA, T
A
=25°C
NCTR
NCTR(SAT)
T
A
=85°C
i4n25_06
6050403020100
0
5
10
15
20
25
30
35
50°C
70°C
85°C
I
F
- LED Current - mA
Ice - Collector Current - mA
25°C
i4n25_07
100806040200–20
10
10
10
10
10
10
10
10
–2
–1
0
1
2
3
4
5
T
A
- Ambient Temperature - °C
Iceo - Collector-Emitter - nA
Typical
V
ce
=10V
Figure 8. Normalized CTRcb vs. LED Current and Temp.
Figure 9. Normalized Photocurrent vs. IF and Temp.
Figure 10. Normalized Non-saturated HFE vs. Base Current and
Temperature
i4n25_08
Normalized to:
0.0
0.5
1.0
1.5
25°C
50°C
70°C
I
F
- LED Current - mA
NCTRcb - Normalized CTRcb
.1 1 10 100
Vcb=9.3 V, I
F
=10 mA, T
A
=25°C
i4n25_09
0.
Normalized to:
0.01
1
1
10
IF- LED Current - mA
Normalized Photocurrent
.1 1 10 100
IF=10 mA, TA=25°C
Nib,
TA=–20°C
Nib,
TA=25°C
Nib,
TA=50°C
Nib,
TA=70°C
i4n25_10
0.4
0.6
1.0
1.2
Normalized to:
Ib - Base Current - µA
1101001000
Ib=20 µA, Vce=10 V, TA=25°C
25°C
70°C
–20°C
NHFE - Normalized HFE
0.8
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6
Document Number 83731
Rev. 1.4, 26-Oct-04
MCT2/ MCT2E
Vishay Semiconductors
Figure 11. Normalized HFE vs. Base Current and Temp.
Figure 12. Propagation Delay vs. Collector Load Resistor
Figure 13. Switching Timing
i4n25_11
0.0
0.5
1.0
1.5
25°C
–20°C
50°C
70°C
NHFE(sat) - Normalized Saturated HFE
1 10 100 1000
Vce=10 V, Ib=20 µA
TA=25°C
Vce=0.4 V
Ib - Base Current -
µA
Normalized to:
i4n25_12
1
10
100
1000
RL - Collector Load Resistor - kΩ
tPLH - Propagation Delay - µs
2.5
2.0
1.5
1.0
.1 1 10 100
IF=10 mA,TA=25°C
VCC=5.0 V, Vth=1.5 V
tPLH
tPHL
tPHL - Propagation Delay - µs
i4n25_13
I
F
tR
=1.5 V
V
O
tD
tStF
tPHL
tPLH
VTH
Figure 14. Switching Schematic
i4n25_14
V
CC =5.0V
F=10 KHz,
DF=50% RL
VO
IF=1 0 mA
MCT2/ MCT2E
Document Number 83731
Rev. 1.4, 26-Oct-04
Vishay Semiconductors
www.vishay.com
7
Package Dimensions in Inches (mm)
Package Dimensions in Inches (mm)
i178004
.010 (.25)
typ.
.114 (2.90)
.130 (3.0)
.130 (3.30)
.150 (3.81)
.031 (0.80) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
pin one ID
6
5
4
12
3
18°
3°–9°
.300–.347
(7.62–8.81)
4°
typ.
ISO Method A
.343 (8.71)
.335 (8.51)
.256 (6.50)
.248 (6.30)
Pin one I.D.
.039
(0.99)
min. .150 (3.81)
.130 (3.30)
.100 (2.54)
.052 (1.33)
.048 (1.22)
4°
.040 (1.016)
.020 (0.508)
.0098 (.25)
.0040 (.10)
.012 (0.31)
.008 (0.20)
.300 (7.62)
.395 (10.03)
.375 (9.63)
3°to 7°
18°
min.
.315 (8.00)
typ.
.050 (1.27) typ.
SMD
ISO Method A
i178002
.100 (2.54) R .010 (.25)
.070 (1.78)
.030 (.76)
.060 (1.52)
.315 (8.00) min
.435 (11.05)
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8
Document Number 83731
Rev. 1.4, 26-Oct-04
MCT2/ MCT2E
Vishay Semiconductors
min.
.315 (8.00)
.020 (.51)
.040 (1.02)
.300 (7.62)
ref.
.375 (9.53)
.395 (10.03)
.012 (.30) typ.
.0040 (.102)
.0098 (.249)
15° max.
18449
Option 9
MCT2/ MCT2E
Document Number 83731
Rev. 1.4, 26-Oct-04
Vishay Semiconductors
www.vishay.com
9
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
