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Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
SURMOUNTTM PIN Diodes:
RoHS M/A-COM Products
Rev. V5
MADP-042XX5-13060 Series
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
Features
• Surface Mount
• No Wirebonds Required
• Rugged Silicon-Glass Construction
• Silicon Nitride Passivation
• Polymer Scratch Protection
• Low Parasitic Capacitance and Inductance
• High Average and Peak Power Handling
• RoHS Compliant
Description
This device is a silicon, glass PIN diode surmount chip
fabricated with M/A-COM’s patented HMICTM process.
This device features two silicon pedestals embedded in a
low loss, low dispersion glass. The diode is formed on the
top of one pedestal and connections to the backside of the
device are facilitated by making the pedestal sidewalls
electrically conductive. Selective backside metallization is
applied producing a surface mount device. This vertical
topology provides for exceptional heat transfer. The
topside is fully encapsulated with silicon nitride and has an
additional polymer layer for scratch and impact protection.
These protective coatings prevent damage to the junction
and the anode air-bridge during handling and assembly.
Applications
These packageless devices are suitable for moderate
incident power applications, ≤ 10W/C.W. or where the
peak power is ≤ 50W, pulse width is ≤ 1μS, and duty cycle
is ≤ 0.01%. Their low parasitic inductance, 0.4 nH, and
excellent RC constant, make these devices a superior
choice for higher frequency switch elements when
compared to their plastic package counterparts.
INCHES MM
MIN MAX MIN MAX
A 0.040 0.042 1.025 1.075
B 0.021 0.023 0.525 0.575
C 0.004 0.008 0.102 0.203
D 0.013 0.015 0.325 0.375
E 0.011 0.013 0.275 0.325
F 0.013 0.015 0.325 0.375
G 0.019 0.021 0.475 0.525
DIM
Parameter Absolute Maximum
MADP-042…-13060 305 405 505 905
C.W. Incident Power dBm 40 44 43 35
Forward Current 250 mA
Reverse Voltage -80 V
Operating Temperature -55°C to +125°C
Storage Temperature -55°C to +150°C
Junction Temperature +175°C
Mounting Temperature +280°C for 10 seconds
Absolute Maximum Ratings1@ TAMB = +25°C
(unless otherwise specified)
1. Exceeding these limits may cause permanent damage.
G
D E F
Notes:
1. Backside metal: 0.1 μM thick.
2. Yellow hatched areas indicate backside ohmic gold contacts.
3. All devices have the same outline dimensions ( A to G).