PRODUCT CATALOG N-CHANNEL ENHANCEMENT MOS FET Da ite on DEVICES, INC. 6OOV, 20A, 0.3509 SDF2ZON6GO GAF FEATURES @ RUGGED PACKAGE @ HI-REL CONSTRUCTION @ CERAMIC EYELETS @ LEAD BENDING OPTIONS @ COPPER CORED 52 ALLOY PINS @ LOW IR LOSSES @ LOW THERMAL RESISTANCE @ OPTIONAL MIL~-S-19500 SCREENING SCHEMAT IC (0) [TERMINAL CONNECTIONS G H Ke 1] GATE 1 | DRAIN + 2|DRAIN |2| SOURCE (S) [3 source [3] GATE STANDARD BEND CONF IGURAT IONS GAF (CUSTOM BEND OPTIONS AVAILABLE) 1177 BLUE HERON BLVD. @ RIVIERA BEACH, FLORIDA 33404 TEL: (407) 848-4311 @ TLX: 51-3435 @FAX: (407) 863-5946 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL UNITS Drain-source Volt.(1) VDSS 600 Vde Drain-Gate Voitage (Reg=1.0Mn) (1) VOGR 600 Vde Gate-Source Voltage Cont inuous VGS +20 Vde qraie eeresn Continuous 1D 20 Ade Drain Current Pulsed(3) 10M 80 A Total Power Dissipation PO 300 W Power Dissipation Derating > 25C 2.4 w/c Operating & Storage Temp. | TU/Tsig -55 TO +150 C Thermal Resistance RthJec 0.42 *C/W Max.Lead temperature TL 300 C ELECTRICAL CHARACTERISTICS Te =25C (WISE SPECIE TED PARAMETER SYMBOL} TEST CONDITIONS MINJ TYP | MAX JUNITS Drain-source VGS=0V Breakdown Volt |Y(BR0Ss 10=250 pA 600] - ~ V Core age ened |ves(TH)|VDS=VGsS 10=250 nA [2.0] - ]4.5] V Gate Source = _ _ Leakage IGSS |VGS=+20 V 100} nA Zero Gate VDS=MAX .RATING VGS=0] - |250| HA Voltage Drain | IDSS |voS=0.8 MAX.RATING Current VGS=0 TJU=125C - ~ [1000] HA Static Drain- VGS=10 V Source On-State/RDS(ON ~ - ~ 1.351 9 Resistance(1) (ON) 1D=10A Forward Trans- VDS 2 50 V Conductance (2) gf's 1DS=10A 9.0} - ~ }5(0) Input Capacitance) CISS - 14500] - pF Output Capacitance|/ COSS VGS=OV | Yos=25 v - |SSO] - pF R T f oe Eapscliance = "| CRSS = [iso = | F Turn-Qn Delay |{td(on) |ypp=300V Zo=S00 - - |100} ns Rise Time tr (nose vtching ti ~ | - [110] ns Turn-Off Delayl/td(off)| are essentially indepen- - - |220; ns Fall Time tf dent of operating temp. _ _ 105] ns Total Gate Charge Gate-Source Plus| Qg ~ 1165] - nc ate-Drain) VGS=10V . 1D=20A, Gate-Source VDS=0.8 MAX.RA Charge ags (Gate charge is essenti- - | 65] - nc . e Cui tee} Qad operating temperature) - ltool - nc Charge SOURCE-DRAIN DIODE RATINGS & CHARACT.T = 25C (MESS OTER- ) PARAMETER SYMBOL} TEST CONDITIONS MIN| TYP .|MAX. |UNITS Continuous ip: Source Current) 15 |Modified MOSFET -~|- |20] A (Body Diode) symbol showing the integral reverse Pulse Source P-N junction recti- cursest fRedy ISM |fier (See schematic)| - | - | 80] A Diode Forward !F=20A VGS*0V _ - Voltage (2) VSD |te=+25C el Reverse =+9ce _ _ Recovery Time | rh io es* Cc 500 ns Reverse Re- arr |dizair100a7 ws - |g.o| - | uc covery Charge ' H . H | TJ = 25C to 150C. Pulse test: 1 i 3 Pulse Width <300uS, Duty Cycle <2z. Repetitive Rating: Pulse Width limited By Max.junction Temperature. A36