IRLR/U3410
HEXFET® Power MOSFET
S
D
G
VDSS = 100V
RDS(on) = 0.105Ω
ID = 17A
Description
5/11/98
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 A
IDM Pulsed Drain Current 60
PD @TC = 25°C Power Dissipation 79 W
Linear Derating Factor 0.53 W/°C
VGS Gate-to-Source Voltage ± 16 V
EAS Single Pulse Avalanche Energy 150 mJ
IAR Avalanche Current 9.0 A
EAR Repetitive Avalanche Energy 7.9 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Absolute Maximum Ratings
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.9
RθJA Junction-to-Ambient (PCB mount) ** ––– 50 °C/W
RθJA Junction-to-Ambient ––– 110
Thermal Resistance
D-PA K
TO-252AA I-PAK
TO-251AA
lLogic Level Gate Drive
lUltra Low On-Resistance
lSurface Mount (IRLR3410)
lStraight Lead (IRLU3410)
lAdvanced Process Technology
lFast Switching
lFully Avalanche Rated
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
PD - 91607B
www.irf.com 1
IRLR/U3410
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.122 ––– V/°C Reference to 25°C, I D = 1mA
––– ––– 0.105 VGS = 10V, ID = 10A
––– ––– 0.125 W VGS = 5.0V, ID = 10A
––– ––– 0.155 VGS = 4.0V, ID = 9.0A
VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 7.7 ––– ––– S VDS = 25V, ID = 9.0A
––– ––– 25 µA VDS = 100V, VGS = 0V
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
QgTotal Gate Charge ––– ––– 34 ID = 9.0A
Qgs Gate-to-Source Charge ––– ––– 4.8 nC VDS = 80V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 20 VGS = 5.0V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 7.2 ––– VDD = 50V
trRise Time ––– 53 ––– ns ID = 9.0A
td(off) Turn-Off Delay Time ––– 30 ––– RG = 6.0Ω, VGS = 5.0V
tfFall Time ––– 26 ––– RD = 5.5Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance ––– 800 ––– VGS = 0V
Coss Output Capacitance ––– 160 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 90 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
nH
IGSS
S
D
G
LSInternal Source Inductance ––– 7.5 –––
RDS(on) Static Drain-to-Source On-Resistance
LDInternal Drain Inductance ––– 4.5 –––
IDSS Drain-to-Source Leakage Current
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)
––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 9.0A, VGS = 0V
trr Reverse Recovery Time ––– 140 210 n s TJ = 25°C, IF =9.0A
Qrr Reverse Recovery Charge ––– 740 1100 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S+LD)
Source-Drain Ratings and Characteristics
A
17
60
Notes:
VDD = 25V, starting TJ = 25°C, L = 3.1mH
RG = 25Ω, IAS = 9.0A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
ISD ≤ 9.0A, di/dt ≤ 540A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C This is applied for I-PAK, LS of D-PAK is measured between lead and
center of die contact
Uses IRL530N data and test conditions
Pulse width ≤ 300µs; duty cycle ≤ 2%
IRLR/U3410
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Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
0.1
1
10
100
0.1 1 10 100
I , D ra in -to -S o u rc e Cu rre nt (A )
D
V , D ra in-to-So urce V o ltage (V )
DS
A
20µ s P ULS E WID TH
T = 25°C
J
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
0.1
1
10
100
0.1 1 10 100
I , D ra in -to -S o u rc e Cu rre nt (A )
D
V , D ra in-to-So urce V o ltage (V )
DS
A
20µ s P ULS E WID TH
T = 175°C
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
J
0.1
1
10
100
2345678910
T = 25°C
J
GS
V , Ga te-to -So u rc e V o lta
g
e
(
V
)
D
I , Drain-to-Source C urrent (A)
V = 50V
20µs PU LSE WIDTH
T = 175°C
J
A
DS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Ju nction T em perature (°C )
R , D ra in- to-So urc e O n R e s is tan c e
DS(on)
(Normalized)
V = 1 0 V
GS
A
I = 15 A
D
IRLR/U3410
4 www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
3
6
9
12
15
0 1020304050
Q , T o ta l Ga te Ch a rg e (n C)
G
V , Ga te-to -S o urc e V olta ge (V )
GS
V = 8 0 V
V = 5 0 V
V = 2 0 V
DS
DS
DS
A
FOR TEST CIRCUIT
SEE FIGURE 13
I = 9 . 0 A
D
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4
T = 25°C
J
V = 0 V
GS
V , So urce-to-D rain Volta
g
e (V)
I , R everse D rain C urrent (A)
SD
SD
A
T = 175°C
J
1
10
100
1000
1 10 100 1000
V , D ra in-to-So urc e Vo lta ge (V )
DS
I , D rain C urrent (A )
O P ER A T IO N IN T H IS A R E A LIMITED
B Y R
D
DS(on)
10µs
100µs
1ms
10ms
A
T = 2 5 ° C
T = 175°C
Single Pulse
C
J
0
200
400
600
800
1000
1200
1400
1 10 100
C , C apacitance (pF )
DS
V , D rain-to-S ourc e V oltage (V)
A
V = 0 V , f = 1 MH z
C = C + C , C S HORT ED
C = C
C = C + C
GS
iss gs g d ds
rss gd
o s s d s g d
C
iss
C
oss
C
rss
IRLR/U3410
www.irf.com 5
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RGD.U.T.
5.0V
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150 175
0
5
10
15
20
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
IRLR/U3410
6 www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
5.0 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
10V
0
50
100
150
200
250
300
350
25 50 75 100 125 150 175
J
E , S ingle P ulse A valanche Energy (m J)
AS
A
Starting T , Junction Tem perature (°C )
V = 2 5 V
I
TOP 3 .7 A
6.4 A
BO TTOM 9.0A
DD
D
IRLR/U3410
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P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFETS
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
IRLR/U3410
8 www.irf.com
Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
TO-252AA (D-PARK)
Par t Mar king Infor mation
6.73 (.265)
6.35 (.250)
- A -
4
1 2 3
6.22 (.245)
5.97 (.235)
- B -
3X 0.89 (.035)
0.64 (.025)
0.25 (.010) M A M B
4.57 (.180)
2.28 (.090)
2X 1.14 (.045)
0.76 (.030)
1.52 (.060)
1.15 (.045)
1.02 (.040)
1.64 (.025)
5.46 (.215)
5.21 (.205) 1.27 (.050)
0.88 (.035)
2.38 (.094)
2.19 (.086) 1.14 (.045)
0.89 (.035)
0.58 (.023)
0.46 (.018)
6.45 (.245)
5.68 (.224)
0.51 (.020)
M IN .
0.58 (.023)
0.46 (.018)
LEAD ASSIG NMENTS
1 - GATE
2 - DRAIN
3 - SOURC E
4 - DRAIN
10.42 (.410)
9.40 (.370)
NOTES:
1 D IM EN S ION ING & TO LE RA NC IN G P E R AN SI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 C ONF ORMS TO J EDEC OUTLINE TO- 2 52AA.
4 DIMENSIO NS SHOWN ARE BEFORE SOLDER DIP,
S OLD E R D IP M AX. +0.16 (.006).
INTERNATIONAL
R EC TIF IER
L OGO
ASSEMBLY
LOT C ODE
EX AMPL E : T HIS IS A N IR F R1 20
WIT H A SS EMB L Y
L OT CODE 9 U 1P FIRST PORTION
OF PART NUMBER
SECOND PORTION
OF PART NUMBER
120
IRFR
9 U 1 P
A
IRLR/U3410
www.irf.com 9
Package Outline
TO-251AA Outline
Dimensions are shown in millimeters (inches)
TO-251AA (I-PARK)
Par t Mar king Infor mation
6.73 (.265)
6.35 (.250)
- A -
6.22 (.245)
5.97 (.235)
- B -
3X 0.89 (.035)
0.64 (.025)
0.25 (.010) M A M B
2.28 (.090)
1.14 (.045)
0.76 (.030)
5.46 (.215)
5.21 (.205) 1.27 (.050)
0.88 (.035)
2.38 (.094)
2.19 (.086)
1.14 (.045)
0.89 (.035)
0.58 (.023)
0.46 (.018) LEAD ASSIGNM ENTS
1 - GATE
2 - DRAIN
3 - SOUR CE
4 - DRAIN
NOTES:
1 D IM EN S ION IN G & TO LE RA N CIN G P ER AN S I Y14.5M , 1982.
2 CONTROLLING DIMENSION : INCH.
3 C ONFORMS T O JEDEC OUTL IN E TO-25 2AA.
4 DIMENSION S SHOWN ARE BEFORE SOLDER DIP,
SOL DER DIP MAX . +0 .16 (.0 06 ).
9.65 (.380)
8.89 (.350)
2X
3X
2.28 (.090)
1.91 (.075)
1.52 (.060)
1.15 (.045)
4
1 2 3
6.45 (.245)
5.68 (.224)
0.58 (.023)
0.46 (.018)
INTERNATIONAL
R ECT IF IER
L O GO
ASSEMBLY
L OT COD E
FIRST PO RTION
OF PART NUMBE
R
SECOND PORTION
OF PART NUMBER
120
9U 1P
EXAMPLE : THIS IS AN IRFU120
WITH ASSEM BLY
L OT CO DE 9 U1 P
IRFU
IRLR/U3410
10 www.irf.com
Tape & Reel Information
TO-252AA
TR
1 6 . 3 ( .6 4 1 )
1 5 . 7 ( .6 1 9 )
8.1 ( .318 )
7.9 ( .312 )
1 2 .1 ( .476 )
1 1 .9 ( .469 ) FEED DIRECTIO N FEED DIRECTIO N
1 6 .3 ( . 6 4 1 )
1 5 .7 ( . 6 1 9 )
TRR TRL
NOTES :
1. CONTRO LLING DIMENSIO N : MILLIMETER.
2. ALL DIMENSIONS ARE SHOW N IN M ILLIMETERS ( INCHES ).
3. O UTLINE CO NFO RM S TO EIA-481 & EIA-541.
NO TES :
1. OU TLIN E CO NFO RM S TO EIA-481.
16 mm
1 3 IN CH
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: 171 (K&H Bldg.) 30-4 Nishi-ikebukuro 3-chome, Toshima-ku, Tokyo Japan Tel: 81 33 983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 16907 Tel: 65 221 8371
Data and specifications subject to change without notice. 5/98
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
