MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMS9014 Features * * * * * * SOT-23 Plastic-Encapsulate Transistors Capable of 0.2Watts(Tamb=25 OC) of Power Dissipation. Collector-current 0.1A Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC Marking Code: J6 NPN Silicon Plastic-Encapsulate Transistor SOT-23 A Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max D Units OFF CHARACTERISTICS V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO C Collector-Base Breakdown Voltage (IC=100uAdc, IE =0) Collector-Emitter Breakdown Voltage (IC=0.1mAdc, IB =0) Emitter-Base Breakdown Voltage (IE =100uAdc, IC=0) Collector Cutoff Current (VCB=50Vdc, IE =0) Collector Cutoff Current (VCE=35Vdc, IB =0) Emitter Cutoff Current (VEB =3.0Vdc, IC=0) 50 --- Vdc 45 --- Vdc 5.0 --- Vdc --- 0.1 uAdc --- 0.1 uAdc --- 0.1 uAdc VCE(sat) VBE(sat) DC Current Gain (IC=1.0mAdc, V CE=5.0Vdc) Collector-Emitter Saturation Voltage (IC=100mAdc, IB =5.0mAdc) Base-Emitter Saturation Voltage (IC=100mAdc, IB =5.0mAdc) E H G K 200 1000 --- --- 0.3 Vdc --- 1.0 Vdc 150 --- MHz DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 SMALL-SIGNAL CHARACTERISTICS fT Transistor Frequency (IC=10mAdc, V CE=5.0Vdc, f=30MHz) J DIMENSIONS ON CHARACTERISTICS hFE(1) F B MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout .031 .800 .035 .900 .079 2.000 CLASSIFICATION OF HFE (1) Rank Range L 200-450 H 450-1000 inches mm .037 .950 .037 .950 www.mccsemi.com Revision: 2 2003/04/30