Publication Order Number:
NTF5P03T3/D
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 5
1
NTF5P03T3G, NVF5P03T3G
Power MOSFET
5.2 A, 30 V
P−Channel SOT−223
Features
•Ultra Low RDS(on)
•Higher Efficiency Extending Battery Life
•Logic Level Gate Drive
•Miniature SOT−223 Surface Mount Package
•Avalanche Energy Specified
•AEC−Q101 Qualified and PPAP Capable − NVF5P03T3G
•These Devices are Pb−Free and are RoHS Compliant
Applications
•DC−DC Converters
•Power Management
•Motor Controls
•Inductive Loads
•Replaces MMFT5P03HD
12
3
4
5.2 AMPERES, 30 VOLTS
RDS(on) = 100 mW
Device Package Shipping†
ORDERING INFORMATION
SOT−223
CASE 318E
STYLE 3
MARKING
DIAGRAM
& PIN
ASSIGNMENT
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
5P03 G
A = Assembly Location
Y = Year
M = Date Code
5P03 = Specific Device Code
G= Pb−Free Package
AYM
1
Gate
2
Drain
3
Source
Drain
4
(Note: Microdot may be in either location)
SOT−223
(Pb−Free)
NTF5P03T3G 4000 / Tape &
Reel
G
G
S
D
P−Channel MOSFET
SOT−223
(Pb−Free)
NVF5P03T3G 4000 / Tape &
Reel
NTF5P03T3G, NVF5P03T3G
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2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Negative sign for P−Channel devices omitted for clarity
Rating Symbol Max Unit
Drain−to−Source Voltage VDSS −30 V
Drain−to−Gate Voltage (RGS = 1.0 MW)VDGR −30 V
Gate−to−Source Voltage − Continuous VGS ±20 V
1 sq in
FR−4 or G−10 PCB
10 seconds
Thermal Resistance − Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current − Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 1)
RTHJA
PD
ID
ID
IDM
40
3.13
25
−5.2
−4.1
−26
°C/W
Watts
mW/°C
A
A
A
Minimum
FR−4 or G−10 PCB
10 seconds
Thermal Resistance − Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current − Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 1)
RTHJA
PD
ID
ID
IDM
80
1.56
12.5
−3.7
−2.9
−19
°C/W
Watts
mW/°C
A
A
A
Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C
(VDD = −30 Vdc, VGS = −10 Vdc, Peak IL = −12 Apk, L = 3.5 mH, RG = 25 W)
EAS 250
mJ
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Repetitive rating; pulse width limited by maximum junction temperature.
NTF5P03T3G, NVF5P03T3G
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3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Cpk ≥ 2.0) (Notes 2 and 4)
(VGS = 0 Vdc, ID = −0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
−30
−
−
−28
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = −24 Vdc, VGS = 0 Vdc)
(VDS = −24 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
−
−
−
−
−1.0
−25
mAdc
Gate−Body Leakage Current
(VGS = ±20 Vdc, VDS = 0 Vdc)
IGSS − − ±100 nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (Cpk ≥ 2.0) (Notes 2 and 4)
(VDS = VGS, ID = −0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
−1.0
−
−1.75
3.5
−3.0
−
Vdc
mV/°C
Static Drain−to−Source On−Resistance (Cpk ≥ 2.0) (Notes 2 and 4)
(VGS = −10 Vdc, ID = −5.2 Adc)
(VGS = −4.5 Vdc, ID = −2.6Adc)
RDS(on)
−76
107
100
150
mW
Forward Transconductance (Note 2)
(VDS = −15 Vdc, ID = −2.0 Adc)
gfs 2.0 3.9 −Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = −25 Vdc, VGS = 0 V,
f = 1.0 MHz)
Ciss −500 950 pF
Output Capacitance Coss −153 440
Transfer Capacitance Crss −58 140
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time (VDD = −15 Vdc, ID = −4.0 Adc,
VGS = −10 Vdc,
RG = 6.0 W) (Note 2)
td(on) −10 24 ns
Rise Time tr−33 48
Turn−Off Delay Time td(off) −38 94
Fall Time tf−20 92
Turn−On Delay Time (VDD = −15 Vdc, ID = −2.0 Adc,
VGS = −10 Vdc,
RG = 6.0 W) (Note 2)
td(on) −16 38 ns
Rise Time tr−45 110
Turn−Off Delay Time td(off) −23 60
Fall Time tf−24 80
Gate Charge (VDS = −24 Vdc, ID = −4.0 Adc,
VGS = −10 Vdc) (Note 2)
QT−15 38 nC
Q1−1.6 −
Q2−3.5 −
Q3 −2.6 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (IS = −4.0 Adc, VGS = 0 Vdc)
(IS = −4.0 Adc, VGS = 0 Vdc,
TJ = 125°C) (Note 2)
VSD
−
−
−1.1
−0.89
−1.5
−
Vdc
Reverse Recovery Time (IS = −4.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 2)
trr −34 −ns
ta−20 −
tb−14 −
Reverse Recovery Stored Charge QRR −0.036 −mC
2. Pulse Test: Pulse Width ≤300 ms, Duty Cycle ≤2.0%.
3. Switching characteristics are independent of operating junction temperatures.
4. Reflects typical values. Cpk +ŤMax limit *Typ
3 SIGMA Ť
NTF5P03T3G, NVF5P03T3G
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4
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
−VGS, GATE−TO−SOURCE VOLTAGE (V)
−ID, DRAIN CURRENT (A)
TJ = 25°C
TJ = 100°C
TJ = −55°C
−VGS, GATE−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
−ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VGS = −10 V
TJ, JUNCTION TEMPERATURE (°C)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
ID = −5.2 A
VGS = −10 V
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
−IDSS, LEAKAGE (nA)
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
−ID, DRAIN CURRENT (A)
VGS = −2.7 V
TJ = 100°C
TJ = 25°C
VDS ≥ −10 V
VGS = 0 V
TJ = 125°C
−3.1 V
−2.8 V
−3.5 V
−3.7 V TJ = 25°C
VGS = −4.5 V
0
1
2
3
4
5
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
−3.9 V
−4.1 V
−4.3 V
−4.5 V
−6 V
−8 V
−10 V
0
1
2
3
4
5
6
7
8
9
10
22.533.544.55
0.025
0.050
0.075
0.100
0.125
0.150
0.175
0.200
345678910
ID = −5.2 A
TJ = 25°C
0.000
0.020
0.040
0.060
0.080
0.100
0.120
0.140
0.160
0.180
0.200
1 2.5 4 5.5 7 8.5 10
0.65
0.75
0.85
0.95
1.05
1.15
1.25
1.35
1.45
1.55
1.65
−50 −25 0 25 50 75 100 125 150
10
100
1000
5 1015202530
NTF5P03T3G, NVF5P03T3G
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5
TYPICAL ELECTRICAL CHARACTERISTICS
RDS(on) LIMIT
100
1
0.1
0.01
1000
100
10
12.5
5.0
2.5
0
DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
−VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
RG, GATE RESISTANCE (W)
Figure 10. Diode Forward Voltage versus Current
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
−IS, SOURCE CURRENT (A)
t, TIME (ns)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
TJ, STARTING JUNCTION TEMPERATURE (°C)
−ID, DRAIN CURRENT (AMPS)
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
0504020 60
1 10 100
0.1 10 1001
ID = −2 A
TJ = 25°C
−VGS
Ciss
Coss
Crss
VGS = 20 V
SINGLE PULSE
TC = 25°C
VDD = −15 V
ID = −4.0 A
VGS = −10 V
VGS = 0 V
TJ = 25°C
ID = −6 A
1 ms
100 ms
10 ms
dc
tr
td(off)
td(on)
Q2
Q1
QT
3010
tf
THERMAL LIMIT
PACKAGE LIMIT
7.5
10
10
−VDS
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
10 ms
Mounted on 2”sq. FR4 board (1”sq. 2 oz. Cu 0.06” thick
single sided) with on die operating, 10 s max.
0
5
10
15
20
25
0
100
200
300
400
500
600
700
800
900
1000
0 5 10 15 20 25 30
TJ = 25°C
VGS = 0 V
0.00
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1
0
50
100
150
200
250
25 50 75 100 125 15
0
NTF5P03T3G, NVF5P03T3G
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6
TYPICAL ELECTRICAL CHARACTERISTICS
RTHJA(t), EFFECTIVE TRANSIENT
THERMAL RESPONSE
Figure 13. FET Thermal Response
t, TIME (s)
0.1
0.01
D = 0.5
SINGLE PULSE
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01
0.2
0.1
0.05
0.02
0.01
1.0E+02 1.0E+03
1
NORMALIZED TO RqJA AT STEADY STATE (1″ PAD)
CHIP
JUNCTION
0.0175 W
0.0154 F
0.0710 W
0.0854 F
0.2706 W
0.3074 F
0.5779 W
1.7891 F
0.7086 W
107.55 F
AMBIENT
NTF5P03T3G, NVF5P03T3G
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7
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
A1
b1
D
E
b
e
e1
4
123
0.08 (0003)
A
L1
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M,
1994.
2. CONTROLLING DIMENSION: INCH.
1.5
0.059 ǒmm
inchesǓ
SCALE 6:1
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
SOLDERING FOOTPRINT
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.50 1.63 1.75 0.060
INCHES
A1 0.02 0.06 0.10 0.001
b0.60 0.75 0.89 0.024
b1 2.90 3.06 3.20 0.115
c0.24 0.29 0.35 0.009
D6.30 6.50 6.70 0.249
E3.30 3.50 3.70 0.130
e2.20 2.30 2.40 0.087
0.85 0.94 1.05 0.033
0.064 0.068
0.002 0.004
0.030 0.035
0.121 0.126
0.012 0.014
0.256 0.263
0.138 0.145
0.091 0.094
0.037 0.041
NOM MAX
L1 1.50 1.75 2.00 0.060
6.70 7.00 7.30 0.264
0.069 0.078
0.276 0.287
HE
− −
e1
0°10°0°10°
q
q
L
L0.20 −−− −−− 0.008 −−− −−−
STYLE 3:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
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