SPICE MODELS: BSS138W BSS138W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features * * * * * Low On-Resistance A Low Gate Threshold Voltage Low Input Capacitance Dim Min Max Fast Switching Speed A 0.25 0.40 B 1.15 1.35 C 2.00 2.20 B C Available in Lead Free/RoHS Compliant Version (Note 4) G Mechanical Data * * SOT-323 D S G H Case: SOT-323 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 * * * Moisture Sensitivity: Level 1 per J-STD-020C * * * Marking Code (See Page 2): K38 K M J Terminal Connections: See Diagram D E L Drain Also Available in Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Please see Ordering Information, Note 6, on Page 2 Gate Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approximate) D 0.65 Nominal E 0.30 0.40 G 1.20 1.40 H 1.80 2.20 J 0.0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.18 a 0 8 All Dimensions in mm Source Maximum Ratings @ TA = 25C unless otherwise specified Symbol BSS138W Units Drain-Source Voltage Characteristic VDSS 50 V Drain-Gate Voltage (Note 1) VDGR 50 V Gate-Source Voltage Continuous VGSS 20 V Drain Current (Note 2) Continuous ID 200 mA Pd Total Power Dissipation (Note 2) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic 200 mW RqJA 625 C/W Tj, TSTG -55 to +150 C @ TA = 25C unless otherwise specified Symbol Min Typ Max Unit Test Condition BVDSS 50 75 3/4 V VGS = 0V, ID = 250mA Zero Gate Voltage Drain Current IDSS 3/4 3/4 0.5 A VDS = 50V, VGS = 0V Gate-Body Leakage IGSS 3/4 3/4 100 nA VGS = 20V, VDS = 0V VGS(th) 0.5 1.2 1.5 V VDS = VGS, ID = 250mA RDS (ON) 3/4 1.4 3.5 W VGS = 10V, ID = 0.22A gFS 100 3/4 3/4 mS Input Capacitance Ciss 3/4 3/4 50 pF Output Capacitance Coss 3/4 3/4 25 pF Reverse Transfer Capacitance Crss 3/4 3/4 8.0 pF Turn-On Delay Time tD(ON) 3/4 3/4 20 ns Turn-Off Delay Time tD(OFF) 3/4 3/4 20 ns OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS =25V, ID = 0.2A, f = 1.0KHz DYNAMIC CHARACTERISTICS VDS = 10V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS Note: VDD = 30V, ID = 0.2A, RGEN = 50W 1. RGS 20KW. 2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 3. Short duration test pulse used to minimize self-heating effect. 4. No purposefully added lead. DS30206 Rev. 6 - 2 1 of 5 www.diodes.com BSS138W a Diodes Incorporated Ordering Information (Note 5) Notes: Device Packaging Shipping BSS138W-7 SOT-323 3000/Tape & Reel 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 6. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: BSS138W-7-F. YM Marking Information K38 K38 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D 0.6 VGS = 3.5V Tj = 25C ID, DRAIN-SOURCE CURRENT (A) 0.5 VGS = 3.25V 0.4 VGS = 3.0V 0.3 VGS = 2.75V 0.2 VGS = 2.5V 0.1 0 0 1 2 5 4 3 6 7 8 9 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Drain-Source Current vs. Drain-Source Voltage ID, DRAIN-SOURCE CURRENT (A) 0.8 VDS = 1V 0.7 -55C 0.6 25C 0.5 150C 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Transfer Characteristics DS30206 Rev. 6 - 2 2 of 5 www.diodes.com BSS138W RDS(ON), NORMALIZED DRAIN-SOURCE ON RESISTANCE (W) 2.45 2.25 2.05 VGS = 10V ID = 0.5A 1.85 1.65 1.45 VGS = 4.5V ID = 0.075A 1.25 1.05 0.85 0.65 -55 45 -5 95 145 Tj, JUNCTION TEMPERATURE (C) Fig. 3 Drain-Source On Resistance vs. Junction Temperature VGS(th), GATE THRESHOLD VOLTAGE (V) 2 1.8 1.6 ID = 1.0mA 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -55 -40 -25 -10 5 20 35 50 65 80 95 110 125 140 RDS(ON), DRAIN-SOURCE ON RESISTANCE (W) Tj, JUNCTION TEMPERATURE (C) Fig. 4 Gate Threshold Voltage vs. Junction Temperature 8 7 150C VGS = 2.5V 6 5 25C 4 3 -55C 2 1 0 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 ID, DRAIN CURRENT (A) Fig. 5 Drain-Source On Resistance vs. Drain Current DS30206 Rev. 6 - 2 3 of 5 www.diodes.com BSS138W 9 8 VGS = 2.75V 7 6 150C 5 4 25C 3 2 -55C 1 0 0.05 0 0.1 0.15 0.25 0.2 ID, DRAIN CURRENT (A) Fig. 6 Drain-Source On Resistance vs. Drain Current 6 VGS = 4.5V 5 150C 4 3 2 25C 1 -55C 0 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 7 Drain-Source On Resistance vs. Drain Current 3.5 VGS = 10V 3 150C 2.5 2 1.5 25C 1 -55C 0.5 0 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 ID, DRAIN CURRENT (A) Fig. 8 Drain-Source On Resistance vs. Drain Current DS30206 Rev. 6 - 2 4 of 5 www.diodes.com BSS138W ID, DIODE CURRENT (A) 1 0.1 150C -55C 0.01 25C 0.001 0 0.2 0.4 0.6 0.8 1.2 1 VSD, DIODE FORWARD VOLTAGE (V) Fig. 9 Body Diode Current vs. Body Diode Voltage 100 C, CAPACITANCE (pF) VGS = 0V f = 1MHz CiSS 10 COSS CrSS 1 0 5 10 15 20 25 30 VDS, DRAIN SOURCE VOLTAGE (V) Fig. 10 Capacitance vs. Drain Source Voltage DS30206 Rev. 6 - 2 5 of 5 www.diodes.com BSS138W