Mechanical Data
BSS138W
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
DS30206 Rev. 6 - 2 1 of 5 BSS138W
www.diodes.com ã Diodes Incorporated
Features
·Low On-Resistance
·Low Gate Threshold Voltage
·Low Input Capacitance
·Fast Switching Speed
·Available in Lead Free/RoHS Compliant Version (Note 4)
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic Symbol BSS138W Units
Drain-Source Voltage VDSS 50 V
Drain-Gate Voltage (Note 1) VDGR 50 V
Gate-Source Voltage Continuous VGSS ±20 V
Drain Current (Note 2) Continuous ID200 mA
Total Power Dissipation (Note 2) Pd200 mW
Thermal Resistance, Junction to Ambient RqJA 625 °C/W
Operating and Storage Temperature Range Tj,T
STG -55 to +150 °C
·Case: SOT-323
·Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·Moisture Sensitivity: Level 1 per J-STD-020C
·Terminal Connections: See Diagram
·Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 6, on Page 2
·Marking Code (See Page 2): K38
·Ordering & Date Code Information: See Page 2
·Weight: 0.006 grams (approximate)
A
M
JL
ED
BC
H
K
G
GS
D
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage BVDSS 50 75 ¾VVGS = 0V, ID = 250mA
Zero Gate Voltage Drain Current IDSS ¾¾0.5 µA VDS = 50V, VGS = 0V
Gate-Body Leakage IGSS ¾¾±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS(th) 0.5 1.2 1.5 V VDS =V
GS, ID = 250mA
Static Drain-Source On-Resistance RDS (ON) ¾1.4 3.5 WVGS = 10V, ID = 0.22A
Forward Transconductance gFS 100 ¾¾mS VDS =25V, ID = 0.2A, f = 1.0KHz
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ¾¾50 pF
VDS = 10V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss ¾¾25 pF
Reverse Transfer Capacitance Crss ¾¾8.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) ¾¾20 ns VDD = 30V, ID = 0.2A,
RGEN = 50W
Turn-Off Delay Time tD(OFF) ¾¾20 ns
Note: 1. RGS £ 20KW.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. Short duration test pulse used to minimize self-heating effect.
4. No purposefully added lead.
SOT-323
Dim Min Max
A0.25 0.40
B1.15 1.35
C2.00 2.20
D0.65 Nominal
E0.30 0.40
G1.20 1.40
H1.80 2.20
J0.0 0.10
K0.90 1.00
L0.25 0.40
M0.10 0.18
a0°8°
All Dimensions in mm
Source
Gate
D
ra
i
n
SPICE MODELS: BSS138W
DS30206 Rev. 6 - 2 2 of 5 BSS138W
www.diodes.com
Ordering Information
Device Packaging Shipping
BSS138W-7 SOT-323 3000/Tape & Reel
(Note 5)
Notes: 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
6. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: BSS138W-7-F.
Marking Information
K38
YM
K38 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009
Code JKLMNPR
ST U VW
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
0
V , GATE-SOURCE VOLTAGE (V)
GS
Fi
g
. 2 Transfer Characteristics
0.1
0.2
0.3
0.5
0.4
0.6
0.7
0
.
8
011.5
0.5 23.5 44.5
2.5 3
I , DRAIN-SOURCE CURRENT (A)
D
-55°C
150°C
25°C
V = 1V
DS
0
0.1
0.2
0.3
0.4
0.5
0
.
6
1
0
3
25
47
689
10
I , DRAIN-SOURCE CURRENT (A)
D
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fi
g
. 1 Drain-Source Current vs. Drain-Source Volta
g
e
T=25°C
jV = 3.5V
GS
V=3.25V
GS
V = 3.0V
GS
V = 2.75V
GS
V = 2.5V
GS
DS30206 Rev. 6 - 2 3 of 5 BSS138W
www.diodes.com
0
I , DRAIN CURRENT (A)
D
Fi
g
. 5 Drain-Source On Resistance vs. Drain Current
1
2
3
4
5
6
7
8
00.02 0.04 0.06 0.08 0.16
0.14
0.12
0.1
R , DRAIN-SOURCE ON RESISTANCE (W)
DS(ON)
150°C
-55°C
25°C
V = 2.5V
GS
0
0.2
0.4
0.6
0.8
1
1.4
1.2
2
1.8
1.6
-40
-55
5
-25 -10 5020 35 80 95
65 110 125
140
V , GATE THRESHOLD VOLTAGE (V)
GS(th)
T , JUNCTION TEMPERATURE (°C)
j
Fi
g
. 4 Gate Threshold Volta
g
e vs. Junction Temperature
I = 1.0mA
D
0.65
T , JUNCTION TEMPERATURE (°C)
j
Fi
g
. 3 Drain-Source On Resistance vs. Junction Temperature
0.85
1.05
1.25
1.65
1.45
1.85
2.05
2.25
2.45
-55 -5 45 95 145
R , NORMALIZED DRAIN-SOURCE ON RESISTANCE (W
)
DS(ON)
V = 10V
GS
V = 4.5V
GS
I = 0.5A
D
I = 0.075A
D
DS30206 Rev. 6 - 2 4 of 5 BSS138W
www.diodes.com
0
0.5
1
1.5
2
2.5
3
3
.5
0.05
0
0.15
0.1 0.25
0.2 0.35
0.3 0.4 0.45
0.5
I , DRAIN CURRENT (A)
D
Fi
g
. 8 Drain-Source On Resistance vs. Drain Current
150°C
-55°C
25°C
V = 10V
GS
0
1
2
3
4
5
6
0.05
0
0.15
0.1 0.25
0.2 0.35
0.3 0.4 0.45
0.5
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fi
g
. 7 Drain-Source On Resistance vs. Drain Current
150°C
-55°C
25°C
V = 4.5V
GS
0
I , DRAIN CURRENT (A)
D
Fi
g
. 6 Drain-Source On Resistance vs. Drain Current
1
2
3
5
4
6
7
8
9
00.05 0.1 0.2
0.15 0.25
150°C
-55°C
25°C
V = 2.75V
GS
DS30206 Rev. 6 - 2 5 of 5 BSS138W
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C, CAPACITANCE (pF)
1
10
100
V , DRAIN SOURCE VOLTAGE (V)
DS
Fi
g
. 10 Capacitance vs. Drain Source Volta
g
e
0 5 10 15 20 25 30
V=0V
GS
f = 1MHz
CrSS
COSS
CiSS
I,DI
O
DE CURRENT (A)
D
0.001
0.01
0.1
1
V , DIODE FORWARD VOLTAGE (V)
SD
Fig. 9 Body Diode Current vs. Body Diode Voltage
0 0.2 0.4 0.6 0.8 11.
2
150°C
-55°C
25°C
