MITSUBISHI RF POWER TRANSISTOR 2SC 1969 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC1969 is a silicon NPN epitaxial planar type transistor designed OUTLINE DRAWING Dimensions in mm for RF power amplifiers on HF band mobile radio applications. 9.14+0.7 $3.6+0.2 FEATURES < : : o vo 1.340.4 @ High power gain: Gpe 2 12dB 4 MI N @Veg = 12V, Po = 16W, f = 27MHz ot ay 4 @ Emitter ballasted construction for high reliaiblity and good = ; 5 performances. S : @ TO-220 package similarly is combinient for mounting. nd bf Ability of withstanding infinite load VSWR when operated at | om e Voc = 16V, Po = 20W, f = 27MHz. Loto = z FW IHpeezais APPLICATION 3} THT oe: : : | & D 10 to 14 watts output power class AB amplifiers applications S] . a in HF band. tL U-@ 2.5 2.5 rlf-o.5 40-10 oF 0.15 9.SMAX os 3 H + - wm ao PIN: @D BASE @ COLLECTOR (FIN} @ EMITTER T-30 @ FIN (COLLECTOR) ABSOLUTE MAXIMUM RATINGS (1c=25C unless otherwise specified) Symbol Parameter Conditions Ratings Unit Vesa Collector to base voltage 60 v Veso Emitter to base voltage 5 Vv VcEo Collector to emitter voltage Roe =o 25 v Ic Collector current 6 A Ta=25C 1.7 Ww Po Collector dissipation To =25C 20 Ww Tj Junction temperature 150 C Tstg Storage temperature 55 to 150 C Rth-a Junction to ambient | 73.5 c/w Thermal resistance Rth-c Junction to case 6.25 c/W Note. Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (1. =28c unless otherwise specified) : Limits Symbol Parameter Test conditions Unit Min Typ Max VisrjieBpo| Emitter to base breakdown voltage le =5mA, Ic=0 5 Vipr)cBo | Collector to base breakdown voitage {c=1mA, le=9 60 ViBR)ceEo| Collector to emitter breakdown voltage Io=10mA, Rae =o 25 logo Collector cutoff current Vep=30V, le =0 100 uA leBo Emitter cutoff current Vep=4V, lo=0 100 uh Nee DC forward current gain * Voe=12V, lo=10mA 10 50 180 _ Po Output power 16 18 Ww ici Voc=12V. Pin=1w, f=27MHz "GC Collector efficiency 60 70 % Note. * Pulse test, Pw=150us, duty=5%. C T D Above parameters. ratings. limits and conditions are subject to change. Item x A B nee | 10-25 | 20-45 | 35-70 | 55-110 | 90-80 MITSUBISHI ELECTRIC NOV. 97MITSUBISHI RF POWER TRANSISTOR 2SC1969 NPN EPITAXIAL PLANAR TYPE TEST CIRCUIT f=27MHz 8D, 7T,1P C,: O.OtuF, 4700pF, 2200pF, 100pF, 10pF in parallel Cz: 10pF, 0,05uF, 820pF, 100pF in parallel Coil dimensions in milli-meter : Inner diameter of coil T: Turn number of coil P: Pitch of coil TYPICAL PERFORMANCE DATA COLLECTOR DISSIPATION Pr. (W) DC CURRENT GAIN hee COLLECTOR DISSIPATION VS. AMBIENT TEMPERATURE 25 20 3 \ Mir, 10 ON Pp <S2, 50, | Pile Ae,: D866 Ir 5 | Sng ] AUTHOUT HEAT sing 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Tz (C) DC CURRENT GAIN VS. COLLECTOR CURRENT To =25C Voce =10V =] a wo o a a L Oo 20 0.01 0.02 0.050.102 0.5 1 23 5 710 COLLECTOR CURRENT Ic (A) : All coil are made from 1.0mm silver plated copper wire 100pF 8D,9T,1P Zout=50Q : li . . S0\ at : to 110pF to 110pF to 110pF 220 pF +Vocc COLLECTOR CURRENT VS. COLLECTOR TO EMITTER VOLTAGE 5 To = 25C COLLECTOR CURRENT Ie (A) 0 4 8 12 16 20 COLLECTOR TO EMITTER VOLTAGE Vce (V) COLLECTOR TO EMITTER BREAKDOWN VOLTAGE VS. . BASE TO EMITTER RESISTANCE 90 To =25C l=10mA 80 70 Viaricer (V) 60 50 COLLECTOR TO EMITTER BREAKDOWN VOLTAGE 0 4 10 20 30 5070100 200300 500700 1K BASE TO EMITTER RESISTANCE Rae (2) NOV. "97 MITSUBISHI ELECTRICCOLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE CHARACTERISTICS 1000 MITSUBISHI RF POWER TRANSISTOR 2SC1969 NPN EPITAXIAL PLANAR TYPE OUTPUT POWER, COLLECTOR EFFICIENCY VS. INPUT POWER 30 100 ELECTRIC cr = 700 To =28'C To =25C 3S 500 {= 1MHz f=27MHz g w = 25 Voc=1eV 80 S 300 = e < > Fe 200 = 3 g < 20 60 ww a = 3 Go 100 6 we a we Kk 70 bE uw 5 5 15 40 = 50 x a 3 5 5 30 w s 10 2 5 5 20 8 Lu a a 10 5 0 9 i 2 3 710 2030 50 70100 0 1 2 3 4 5 COLLECTOR TO BASE VOLTAGE Veg (Vv) INPUT POWER Pin (W) IN CASE AB OPERATING OUTPUT POWER VS. OUTPUT POWER COLLECTOR COLLECTOR SUPPLY VOLTAGE CURRENT VS. INPUT POWER 30 30 Tote 30 To = 25C " c= f=27MHz Pin=2W 207 5 =27MHz Po 20 _ 25 bVco=12V - 4 Veo =12V 1 Of Ss ADJUSTMENT = Pin=3W o o > ~~ TF ADJUSTMENT 7 ~ _ a a 5p ld =150mA 5 z ia 20 a uw Ww uw 3 3 = = zs 5 & 2 2 2 oO 5 1 5 5 g a ar o o 6.7 07 4 10 0.5 05 8 O 0.3 0.3 5 0.2 0.2 8 10 12 14 16 18 0,030.05 0.1 0.20.3 0.50.71 2 3 5 COLLECTOR SUPPLY VOLTAGE Veg {V} INPUT POWER Pig (W) THIRD ORDER INTERMODULATION DISTORTION VS. OUTPUT POWER 60 To =25C 5 f=27MHz = -50 Veo =12V = Id =150mA 8 - Af=5kHz ac aS ws 2 ~a x>30 2 Oz of ac 2S 20 ra FO 105 4 8 12 16 20 QUTPUT POWER LEVEL (PEP) (W) NOV. ' 97 MITSUBISHI