CPH5901 Ordering number : ENN8278A TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET CPH5901 High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Features * * * Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting efficiency greatly. The CPH5901 is formed with two chips, being equivalent to the 2SK932 and the other the 2SC4639, placed in one package. Common drain and emitter. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit [FET] Drain-to-Source Voltage VDSX VGDS 15 V --15 V IG ID 10 mA Drain Current 50 mA Allowable Power Dissipation PD 350 mW V Gate-to-Drain Voltage Gate Current Mounted on a ceramic board (600mm20.8mm) [TR] Collector-to-Base Voltage VCBO 55 Collector-to-Emitter Voltage VCEO 50 V Emitter-to-Base Voltage VEBO 6 V Collector Current Base Current IC ICP IB Collector Dissipation PC Mounted on a ceramic board (600mm20.8mm) Total Dissipation PT Mounted on a ceramic board (600mm20.8mm) Junction Temperature Tj Storage Temperature Tstg Collector Current (Pulse) 150 mA 300 mA 30 mA 350 mW 500 mW [Common Ratings] 150 C --55 to +150 C Marking : 1A Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62005AC MS IM TB-00001557 / 32505AC TS IM TA-3705 No.8278-1/6 CPH5901 Electrical Characteristics at Ta=25C Parameter Symbol Ratings Conditions min typ Unit max [FET] Gate-to-Drain Breakdown Voltage V(BR)GDS Gate Cutoff Current IG=--10A, VDS=0V VGS=--10V, VDS=0V VDS=5V, ID=100A --0.2 6.0* Cutoff Voltage IGSS VGS(off) Drain Current IDSS VDS=5V, VGS=0V Forward Transfer Admittance Input Capacitance yfs Ciss VDS=5V, VGS=0V, f=1kHz VDS=5V, VGS=0V, f=1MHz Reverse Transfer Capacitance Crss Noise Figure NF --15 V --1.0 --0.6 25 nA --1.4 V 20.0* mA 50 mS 10 pF VDS=5V, VGS=0V, f=1MHz 3.0 pF VDS=5V, Rg=1k, ID=1mA, f=1kHz 1.5 dB [TR] Collector Cutoff Current ICBO Emitter Cutoff Current IEBO hFE DC Current Gain Gain-Bandwidth Product fT VCB=35V, IE=0A VEB=4V, IC=0A VCE=6V, IC=1mA 135 0.1 A 0.1 A 400 VCE=6V, IC=10mA 200 Cob VCB=6V, f=1MHz 1.7 Collector-to-Emitter Saturation Voltage VCE(sat) 0.08 0.4 V Base-to-Emitter Saturation Voltage VBE(sat) IC=50mA, IB=5mA IC=50mA, IB=5mA 0.8 1.0 V Output Capacitance Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage V(BR)CBO V(BR)CEO IC=10A, IE=0A IC=1mA, RBE= Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10A, IC=0A See specified Test Circuit. Turn-ON Time ton tstg Storage Time Fall Time tf MHz pF 55 V 50 V 6 V 0.15 s See specified Test Circuit. 0.75 s See specified Test Circuit. 0.20 s * : The CPH5901 is classified by IDSS as follows : (unit : mA) Rank F G IDSS 6.0 to 12.0 10.0 to 20.0 Package Dimensions unit : mm 7017-007 Electrical Connection 5 0.2 2.8 1.6 0.05 1 2 Top view 0.6 1 1 : Collector 2 : Gate 3 : Source 4 : Emitter / Drain 5 : Base 3 0.6 4 3 0.15 0.4 5 4 2 0.95 1 : Collector 2 : Gate 3 : Source 4 : Emitter/Drain 5 : Base 0.7 0.9 0.2 2.9 SANYO : CPH5 Switching Time Test Circuit PW=20s D.C.1% IB1 IB2 OUTPUT INPUT VR 50 RB + 220F VBE= --5V RL + 470F VCC=20V 10IB1= --10IB2= IC=10mA No.8278-2/6 CPH5901 ID -- VDS 16 ID -- VDS [FET] 20 [FET] VGS=0V 16 Drain Current, ID -- mA 12 10 --0.1V 8 --0.2V 6 4 --0.3V --0.6V 0 0.4 0.8 1.2 1.6 Drain-to-Source Voltage, VDS -- V [FET] A 0m =2 S mA I DS 15 A m 10 A 6m 0 --0.2 Gate-to-Source Voltage, VGS -- V yfs -- ID 10 A 10m mA 20m 6 S= 3 I DS 2 10 7 5 3 1.0 10 ITR10330 [FET] 7 5 3 2 5 7 2 10 3 Drain Current, IDSS -- mA yfs -- IDSS 100 5 ITR10332 [FET] VDS=5V VGS=0V f=1kHz 7 5 3 2 10 2 3 5 7 2 10 Drain Current, ID -- mA Ciss -- VDS 3 3 3 5 5 7 7 5 3 2 1.0 3 Crss -- VDS [FET] 10 2 10 Drain Current, IDSS -- mA ITR10333 VGS=0V f=1MHz 2 Input Capacitance, Ciss -- pF 8 VDS=5V ID=100A 3 Forward Transfer Admittance, yfs -- mS A 5 6 --0.1 [FET] 7 4 VGS(off) -- IDSS ITR10331 VDS=5V f=1kHz --0.4V --0.5V --1.0 0 10 Reverse Transfer Capacitance, Crss -- pF Forward Transfer Admittance, yfs -- mS 100 2 2 40 0 --0.4 --0.3V Drain-to-Source Voltage, VDS -- V 20 --0.6 --0.2V 0 30 --0.8 8 ITR10329 VDS=5V --1.0 --0.1V 2.0 ID -- VGS --1.2 12 --0.6V Cutoff Voltage, VGS(off) -- V 0 VGS=0V 4 --0.4V --0.5V 2 Drain Current, ID -- mA Drain Current, ID -- mA 14 5 ITR10334 [FET] VGS=0V f=1MHz 7 5 3 2 1.0 7 5 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 ITR10335 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 ITR10336 No.8278-3/6 CPH5901 NF -- f 14 12 3m A 0 10 2 6 4 mA k 8 10 10 10 A 1m 1k 4 2 5 100 2 5 2 1k 5 10k 2 PD -- Ta 400 0 10 5 100k 2 5 1M ITR10337 Frequency, f -- Hz [FET] VDS=5V Rg=1k I D= 8 2 Allowable Power Dissipation, PD -- mW 14 Noise Figure, NF -- dB 10 00 =5 Rg Noise Figure, NF -- dB 12 6 NF -- f [FET] VDS=5V ID=10mA 2 5 100 2 5 1k 2 5 10k 2 5 100k 2 5 1M ITR10338 Frequency, f -- Hz [FET] 350 M ou 300 nt 250 ed on ac er am ic 200 bo ar 150 d (6 00 m 100 m2 0. 8m m ) 50 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C IC -- VCE 50 12 350A 300A 40 30 150A 20 100A 50A 10 [TR] 50A 45A 10 250A 200A Collector Current, IC -- mA Collector Current, IC -- mA IC -- VCE [TR] A 400 50 0 A A 450 160 IT09862 8 40A 35A 30A 6 25A 20A 4 15A 10A 5A 2 IB=0A 0 0 0.2 0.4 0.6 0.8 Collector-to-Emitter Voltage, VCE -- V 0 10 20 30 40 50 Collector-to-Emitter Voltage, VCE -- V ITR10340 IC -- VBE 160 IB=0A 0 1.0 [TR] hFE -- IC 2 ITR10341 [TR] VCE=6V VCE=6V 140 DC Current Gain, hFE 100 Ta=75C 25C --25C Collector Current, IC -- mA 1000 120 80 60 40 7 5 3 Ta=75C 2 25C --25C 100 7 20 5 0 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 1.4 ITR10342 3 0.1 2 3 5 1.0 2 3 5 10 2 3 Collector Current, IC -- mA 5 100 2 3 ITR10343 No.8278-4/6 CPH5901 f T -- IC [TR] VCE=6V 3 3 2 100 7 5 2 10 7 5 3 2 3 1.0 2 3 5 7 2 10 3 5 7 Collector Current, IC -- mA 2 100 ITR10344 Cob -- VCB 3 5 [TR] 5 3 2 1.0 3 5 7 10 ITR10345 VCE(sat) -- IC [TR] IC / IB=10 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 7 2 1.0 3 2 10 7 Emitter-to-Base Voltage, VEB -- V f=1MHz Output Capacitance, Cob -- pF [TR] f=1MHz 5 2 1.0 1.0 7 5 3 2 0.1 75C Ta= C --25 7 5 C 25 3 7 2 1.0 5 5 7 2 1.0 3 5 7 2 10 3 5 Collector-to-Base Voltage, VCB -- V VBE(sat) -- IC 10 7 100 ITR10346 3 5 7 2 10 3 5 7 [TR] 2 100 ITR10347 PC -- Ta 400 [TR] IC / IB=10 Collector Dissipation, PC -- mW 350 5 3 2 1.0 Ta= --25C 7 25C 75C 5 3 1.0 2 Collector Current, IC -- mA 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Cib -- VEB 5 Input Capacitance, Cib -- pF Gain-Bandwidth Product, f T -- MHz 7 M ou 300 nt 250 ed on ac er am ic 200 bo ar 150 d (6 00 m 100 m2 0. 8m m ) 50 0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 7 2 100 ITR10348 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT09863 No.8278-5/6 CPH5901 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. PS No.8278-6/6