SMBTA06/ MMBTA06
Feb-20-20021
NPN Silicon AF Transistor
High breakdown voltage
Low collector-emitter saturation voltage
Complementary type: SMBTA56 (PNP)
MMBTA56 (PNP)
1
2
3
VPS05161
Type Marking Pin Configuration Package
SMBTA06/ MMBTA06 s1G 1=B 2=E 3=C SOT23
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 80 V
Collector-base voltage VCBO 80
Emitter-base voltage VEBO 4
DC collector current IC500 mA
Peak collector current ICM 1 A
Base current IB100 mA
Peak base current IBM 200
Total power dissipation, TS = 79 °C Ptot 330 mW
Junction temperature Tj150 °C
Storage temperature Tstg -65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS
215 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
SMBTA06/ MMBTA06
Feb-20-20022
Electrical Characteristics
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 80 - - V
Collector-base breakdown voltage
IC = 100 µA, IE = 0
V(BR)CBO 80 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 4 - -
Collector cutoff current
VCB = 80 V, IE = 0
ICBO - - 100 nA
Collector cutoff current
VCB = 80 V, IE = 0 , TA = 150 °C
ICBO - - 20 µA
Collector cutoff current
VCE = 60 V, IB = 0
ICEO - - 100 nA
DC current gain 1)
IC = 10 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
hFE
100
100
-
-
-
-
-
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 10 mA
VCEsat - - 0.25 V
Base-emitter voltage 1)
IC = 100 mA, VCE = 1 V
VBE(ON) - - 1.2
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 20 MHz
fT- 100 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - 12 - pF
1) Pulse test: t ≤ 300µs, D = 2%
SMBTA06/ MMBTA06
Feb-20-20023
Collector current IC = f (VBE)
VCE = 1V
EHP00815
10
0V
BE
1.5
C
10
3
1
10
-1
5
0.5 1.0
10
0
5
Ι
V
mA
5
10
2
100 C
25 C
-50 C
Total power dissipation Ptot = f(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
30
60
90
120
150
180
210
240
270
300
mW
360
Ptot
Permissible pulse load
Ptotmax / PtotDC = f (tp)
10
EHP00816
-6
0
10
5
D
=
5
10
1
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
tp
=
DT
tp
T
totmax
tot
P
DC
P
p
t
5
Transition frequency fT = f (IC)
VCE = 5V
10
EHP00817
03
10mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
f
MHz
Ι
55
SMBTA06/ MMBTA06
Feb-20-20024
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 10
EHP00818
10
0V
BEsat
1.5
C
10
3
1
10-1
5
0.5 1.0
100
5
Ι
V
mA
5
102
100 ˚C
25 ˚C
-50 ˚C
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 10
0.0
10
EHP00819
CEsat
V
0
3
10
Ι
C
mA
1
10
2
10
C
5
5
100
25 C
-50 C
0.1 0.2 0.3 0.4 0.5 0.6 V 0.8
DC current gain hFE = f (IC)
VCE = 1V
EHP00821
10
h
C
FE
101
10
-1 0
Ι
100 C
25 C
-50 C
1
10 2
10 3
10
mA
2
10
3
10
0
10
Collector cutoff current ICBO = f (TA)
VCB = 80V
EHP00820
10
0C
A
150
nA
CBO
10
4
1
10
-1
5
50 100
5
10
2
10
0
5
Ι
T
max
typ
5
10
3
