©2009 Fairchild Semiconductor Corporation
FQD11P06 / FQU11P06
60V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
DC/DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
• -9.4A, -60V, R
DS(on)
= 0.185Ω @V
GS
= -10 V
• Low gate charge ( typical 13 nC)
• Low Crss ( typical 45 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Rating s
T
C
= 25°C unless otherwise noted
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
Symbol Parameter FQD11P06 / FQU11P06 Units
V
DSS
Drain-Source Voltage -60 V
I
D
Drain Current - Continuous (T
C
= 25°C) -9.4 A
- Continuous (T
C
= 100°C) -5.95 A
I
DM
Drain Current - Pulsed
(Note 1)
-37.6 A
V
GSS
Gate-Source Voltage ± 30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
160 mJ
I
AR
Avalanche Current
(Note 1)
-9.4 A
E
AR
Repetitive Avalanche Energy
(Note 1)
3.8 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
-7.0 V/ns
P
D
Power Dissipation (T
A
= 25°C) * 2.5 W
Power Dissipation (T
C
= 25°C) 38 W
- Derate above 25°C 0.3 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds 300 °C
Symbol Parameter Typ Max Units
R
θJC
Thermal Resistance, Junction-to-Case -- 3.28 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient * -- 50 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient -- 110 °C/W
●
●●
●
●
●●
●
●
●●
●
▲
▲▲
▲
▶
▶▶
▶
!
!!
!
!
!!
!
!
!!
!
●
●●
●
●
●●
●
●
●●
●
▲
▲▲
▲
▶
▶▶
▶
!
!!
!
!
!!
!
!
!!
!
S
D
G
I-PAK
FQU Series
D-PAK
FQD Series GSD
GS
D
January 2009
QFET
®
• RoHS Compliant
Rev. C6. January 2009
FQD11P06 / FQU11P06
Elerical Charac teristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.1mH, I
AS
= -9.4A, V
DD
= -25V, R
G
= 25 Ω, Starting T
J
= 25°C
3. I
SD
≤ -11.4A, di/dt ≤ 300A/µs, V
DD
≤ BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= -250 µA-60 -- -- V
∆BV
DSS
/ ∆T
J
Breakdown Voltage Temperature
Coefficient I
D
= -250 µA, Referenced to 25°C -- -0.07 -- V/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= -60 V, V
GS
= 0 V -- -- -1 µA
V
DS
= -48 V, T
C
= 125°C -- -- -10 µA
I
GSSF
Gate-Body Leakage Current, Forward V
GS
= -25 V, V
DS
= 0 V -- -- -100 nA
I
GSSR
Gate-Body Leakage Current, Reverse V
GS
= 25 V, V
DS
= 0 V -- -- 100 nA
On Characteristics
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= -250 µA-2.0 -- -4.0 V
R
DS(on)
Static Drain-Source
On-Resistance V
GS
= -10 V, I
D
= -4.7 A -- 0.15 0.185 Ω
g
FS
Forward Transconductance V
DS
= -30 V, I
D
= -4.7 A
(Note 4)
-- 4.9 -- S
Dynamic Characteristics
C
iss
Input Capacitance V
DS
= -25 V, V
GS
= 0 V,
f = 1.0 MHz
-- 420 550 pF
C
oss
Output Capacitance -- 195 250 pF
C
rss
Reverse Transfer Capacitance -- 45 60 pF
Switching Characteristics
t
d(on)
Turn-On Delay Time V
DD
= -30 V, I
D
= -5.7 A,
R
G
= 25 Ω
(Note 4, 5)
-- 6.5 25 ns
t
r
Turn-On Rise Time -- 40 90 ns
t
d(off)
Turn-Off Delay Time -- 15 40 ns
t
f
Turn-Off Fall Time -- 45 100 ns
Q
g
Total Gate Charge V
DS
= -48 V, I
D
= -11.4 A,
V
GS
= -10 V
(Note 4, 5)
-- 13 17 nC
Q
gs
Gate-Source Charge -- 2.0 -- nC
Q
gd
Gate-Drain Charge -- 6.3 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -- -- -9.4 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- -37.6 A
V
SD
Drain-Source Diode Forward Voltage V
GS
= 0 V, I
S
= -9.4 A -- -- -4.0 V
t
rr
Reverse Recovery Time V
GS
= 0 V, I
S
= -11.4 A,
dI
F
/ dt = 100 A/µs
(Note 4)
-- 83 -- ns
Q
rr
Reverse Recovery Charge -- 0.26 -- µC
Rev. C6,January 2009
FQD11P06 / FQU11P06
©2009 Fairchild Semiconductor Corporation
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
10
-1
10
0
10
1
150
℃
Notes :※
1. V
GS
= 0V
2. 250µ s Pulse Test
25
℃
-I
DR
, Reverse Drain Current [A]
-V
SD
, Source-Drain Voltage [V]
0 1020304050
0.0
0.2
0.4
0.6
0.8
Note : T
※
J = 25
℃
V
GS
= - 20V
V
GS
= - 10V
R
DS(on)
[
Ω
],
Drain-Source On-Resistance
-I
D
, Drain Current [A]
246810
10
-1
10
0
10
1
150
℃
25
℃
-55
℃
Notes :※
1. V
DS
= -30V
2. 250µ s Pulse Test
-I
D
, Drain Current [A]
-V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
-1
10
0
10
1
V
GS
Top : - 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
Notes :
※
1. 250µ s Pulse Test
2. T
C
= 25
℃
-I
D
, Drain Current [A]
-V
DS
, Drain-Source Voltage [V]
0 2 4 6 8 10 12 14
0
2
4
6
8
10
12
V
DS
= -30V
V
DS
= -48V
Note : I
※
D
= -11.4 A
-V
GS
, Gate-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
10
-1
10
0
10
1
0
200
400
600
800
1000
1200
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes :
※
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitance [pF]
-V
DS
, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. C apacitance Cha rac te ri st i cs Fig ure 6. Gate Ch arge Characteris tics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage Figure 4. Body Diode Fo rwa rd Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On- R egio n Ch ar act er i st ics
Rev. C6, January 2009
FQD11P06 / FQU11P06
©2009 Fairchild Semiconductor Corporation
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
N otes :
※
1 . Z
θJC
(t) = 3.28 /W M ax.
℃
2 . D u ty F acto r, D = t
1
/t
2
3 . T
JM
- T
C
= P
DM
* Z
θJC
(t)
sin gle pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Z
θJC
(t), Thermal Response
t
1
, S quare W ave P u lse D uratio n [sec]
25 50 75 100 125 150
0
2
4
6
8
10
-I
D
, Drain Current [A]
T
C
, Case Temperature [ ]
℃
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
DC
10 ms
1 ms
100
µ
s
Operation in This Area
is Limited by R
DS(on)
Notes :
※
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
-I
D
, Drain Current [A]
-V
DS
, Drain-Source Voltage [V]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
Notes :
※
1. V
GS
= -10 V
2. I
D
= -4.7 A
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
T
J
, Junction Temperature [
o
C]
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
Notes :
※
1. V
GS
= 0 V
2. I
D
= -250 µ A
-BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [
o
C]
Typical Characteristics
(Continued)
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figu re 7. Breakdow n Vol tage Va ri at i on
vs. Temperature Figure 8. On-Resistance Variation
vs. Temperatu r e
Figure 11. Transient Ther mal Res ponse Curve
t
1
P
DM
t
2
Rev. C5, October 2008
FQD11P06 / FQU11P06
©2008 Fairchild Semiconductor Corporation
©2008 Fairchild Semiconductor Corporation
Charge
V
GS
-10V
Q
g
Q
gs
Q
gd
-3mA
V
GS
DUT
V
DS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
V
GS
-10V
Q
g
Q
gs
Q
gd
-3mA
V
GS
DUT
V
DS
300nF
50KΩ
200nF
12V
Same Type
as DUT
V
DS
V
GS 10%
90%
t
d(on)
t
r
t
on
t
off
t
d(of f )
t
f
V
DD
-10V
V
DS
R
L
DUT
R
G
V
GS
V
DS
V
GS 10%
90%
t
d(on)
t
r
t
on
t
off
t
d(of f )
t
f
V
DD
-10V
V
DS
R
L
DUT
R
G
V
GS
E
AS
=LI
AS2
----
2
1--------------------
BV
DSS
-V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
-10V DUT
R
G
L
I
D
t
p
E
AS
=LI
AS2
----
2
1
E
AS
=LI
AS2
----
2
1
----
2
1--------------------
BV
DSS
-V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
-10V DUT
R
G
LL
I
D
I
D
t
p
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
Rev. C6, January 2009
FQD11P06 / FQU11P06
©2009 Fairchild Semiconductor Corporation
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
N otes :
※
1 . Z
θJC
(t) = 3.28 /W M ax.
℃
2 . D u ty F acto r, D = t
1
/t
2
3 . T
JM
- T
C
= P
DM
* Z
θJC
(t)
sin gle pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Z
θJC
(t), Thermal Response
t
1
, S quare W ave P u lse D uratio n [sec]
25 50 75 100 125 150
0
2
4
6
8
10
-I
D
, Drain Current [A]
T
C
, Case Temperature [ ]
℃
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
DC
10 ms
1 ms
100
µ
s
Operation in This Area
is Limited by R
DS(on)
Notes :
※
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
-I
D
, Drain Current [A]
-V
DS
, Drain-Source Voltage [V]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
Notes :
※
1. V
GS
= -10 V
2. I
D
= -4.7 A
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
T
J
, Junction Temperature [
o
C]
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
Notes :
※
1. V
GS
= 0 V
2. I
D
= -250 µ A
-BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [
o
C]
Typical Characteristics
(Continued)
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figu re 7. Breakdow n Vol tage Va ri at i on
vs. Temperature Figure 8. On-Resistance Variation
vs. Temperatu r e
Figure 11. Transient Ther mal Res ponse Curve
t
1
P
DM
t
2
Rev. C6, January 2009
FQD11P06 / FQU11P06
©2008 Fairchild Semiconductor Corporation
©2009 Fairchild Semiconductor Corporation
Rev. C6, January 2009
FQD11P06 / FQU11P06
Mechanical Dimensions
©2009 Fairchild Semiconductor Corporation
TO-252 (DPAK) (FS PKG Code 36)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
millimeters
Par t Weight per unit (gram): 0.33
Rev. C6. January 2009
FQD11P06 / FQU11P06
Mechanical Dimensions
Dimensions in Millimeters
I - PAK
©2009 Fairchild Semiconductor Corporation
Rev. I37
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™ *
™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FlashWriter® *
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
®
The Power Franchise®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
μSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
tm
®
tm
tm
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website,
www.fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
.
FQD11P06 / FQU11P06
Rev. C6. January 2009
©2009 Fairchild Semiconductor Corporation
