HERMETICALLY SEALED GLASS PACKAGED TUNING DIODES (MISSO erect ABRUPT - HYPERABRUPT Ut ELECTRICAL CHARACTERISTICS (Ta= 25 C unless otherwise noted) APPLICATIONS FOR USE TO 2.5 Ghz VERY HIGH 0 PREDICTABLE TRACKING | tude Cap. (CT) RATIO ae RATIO ase RATIO. Qa RATIO ase y : TYPE YPE e TYPE RATIO ase 4 110% @ AVI Me czcan some |] TNE covcan soma | | TYPE C2/C3p sO we cata some: | | "hn cals SO MH ' af munity min/max ma No minftyp min minityp min manhtyp oF ta SQU2134 2.2/2.7 = 1800 ta 22 GMA 1.22 700 SO121@A 2.3/2.8 1400 SQ1714 2.2/2.6 1400 22 2 SOQI21SA 2.4/2.8 1300 sOrmis = 2.3/2.7 1300 2 3a GeesA 1.7/2.2 600 SQ1216A 2.5/3.0 1200 sare? 2.4/2.8 = 1200 33 39 CeMeA 1.8/2.4 600 SQI2174 2.5/3.0 1100 savy = 2.4/2.8 1100 39 4) SQi21eaA = -2.5/3.0 1000 soe = 2.5/2.9 1000 4? 5.6 GeesA 18/24 600 SQIZ19A = 2.6/3.1 1000 sais = 2.5/2.9 1000 56 68 mviEzm = (2.0/2.5 300 GeeA 19/24 600 $Q122A = 2.7/3.1 1000 sas 2.7/3.1 tos 68 s 82 avis = 2.0/2.5 300 SQ12Z22A = 2.9/3.2 1000 sas72zz 2.8/3.2 1090 82 st 100 mvi67e = 2.0/2.5 300 Gea = 1.9/2.4 600 SRI22BA 2.9/3.2 1000 $ai727q 2.8/3.1 1900 10.0 s 120 MV1626 2.0/2.5 300 SQ122%A 2.9/3.2 900 sayz 2.8/3.1 990 120 s 15.0 MVI628 (2.0/2.5 250 GEISA = 2.0/2.5 600 9012280 2.9/3.2 900 sai72e 2.8/3.1 908 Mv836 1.8/2.0 30 15.0 s 18.0 MvIE% = 2.0/2.6 250 SQ12WA = 2.9/3.2 800 soi73e (2.9/3.1 900 mve3t 1.8/2.0 25 180 3 20.9 mvieaz (2.0/2.6 250 SQ1232A 2.9/3.2 800 s017320 2.9/3.1 800 mo | & 220 mviese = 2.0/2.6 258 GS22A 2.0/2.5 500 $01230A 89 3.0/33 = 800 $ai73e = 2.9/3.2 so mva3z 1.8/2.1 2 220 si 270 MV1636 (20/26 200 $01236A = 3.0/3.3 a0 801736 2.9/3.2 00 mva33 1.8/2.1 8 a y 33.0 mviem = 2.0/2.6 200 SOIZHA = 3.0/3.3 700 sai7se = (2.9/3.2 700 mvese 1.9/2.2 20 330 | 8 3.0 mviese = 2.0/2.6 200 sarz4g 2.9/3.2 600 vers 1.9/2.2 20 390 & 470 mviea2 (2.0/2.7 200 gai7s2 = 2.9/3.2 500 Mva36 1.9/2.2 15 470 $60 maviess = 2.0/2.7 150 sae = 2.9/3.2 450 mvs37 1.9/2.2 15 560 5 6ac mviess = 2.0/2.7 188 sae = 2.9/3.2 360 mve3s 2.0/2.2 15 680 $: 82.0 mvs = 2.0/2.7 150 saves = 2.9/3.2 300 waver 2.0/2.2 10 a0 8 100.0 mviese = (2.0/2.7 190 $ai7se = 2.9/3.2 308 mvean 2.0/2.2 10 io 0 S4 VR min) 20 Vdc @ IR @ 10 Ade 2 Vee @ in - WWuAde 30 Vdc @1R 10 uAdc 30 Vde @ ER - 10 wAde 30 Vdc @IR 10 vAde | WO2UAdC@VR 25Ve Q02uAde@VR 25Vic l IR (man} 1 vi - 20d Adc@VR 25 Vd mr Ot ekac eva Ts vee osvagcova ve 20uAdc@TA 150C 2.0 uAde @TA 150C nl Tec! 308 ppm/0C 300 ppm PC 300 pem/C 300 ppm/C 300 ppm/C Cave p07 D0 38 Minature DO? " pa? 4 DO) L.. 15.8 28 VOLTS p= GENERAL SPECIFICATIONS =" TYPE RATIO] =a @ NO. cricze 2A M2 (25 C unless noted: tye mn poe co 120.0 | mvi16sz 26 250 RATING SYMBOL VALUE Disde Cap. 150.6) Mvt654 26 250 Reverse Vottage VA As SPECIFIED (ery 1000 | Mvt6s6 26 200 Junction Temperature Ty +1 75C Max avr tte 200.0 | MVI658 26 200 Storage Temperature Taty ~65C to 200C 220.0 | Mv1seD 26 150 - + Linear Power Derating 4 mC = % 250.0 | mv16623 23 150 0035] MINDO-?7] 00-7 00.14 pi 270.0 | svi68e3 23 100 330.0 | mviees3 23 100 Device Dissipation (mW Max) Po 400 250 400 $00 - oo Case Capscitance (pf Typ) Cc 0.10 O45 02 03 vn tmin) 20 Vac @ IR = 10 wAde MV1652/60 Sores Inductance Inhy Typ) ts 15 70 $0 oe 15 Vie @ 1p = 10 wAde MVISG2/66 in (max) 0.1 uAde @ VR = 15 Vee MVI052/60 O.t uAde @ VR = 10 Vac MV1662/66 Tee 308 pec = PACKAGE CHARACTERISTICS Case 00-14 ieee N \ * Total Diode Capscitance measured at 1 MHz and VR specified. { x t _ To order devices with CT Nem 5.0 %or.. 2.0% add Suttin 8 or po Tv I 1 C respectively. -- ~ Moe Lek HM 0 (1) Copacitance Temperature Coefficient (typ) @ 4V/1 MHz For other types not listed here (2) For SOQU716, C4 = Sef. nom 00-35 Min 00-7 00-7 b0.14 your representative or the fac (3b Tuning Ratio @ C2/C15 tor MVIB62/66. requirements, OWA |) Min | Max Min | Max | Min | Mex Mia | Max L 190 | 0.150 | 0,176 0.300 0.200 | u 1.00 1.000 1.060 1,000 w 6.019 | 0.02) | 0.014 | 0.016 | 0.019 | 0.021 | 0.019 | 0.021 0 O75 | .085 | 0.068 | 0.076 | 0.092 | 0.104 | 0.108 | 0.140 All dimensions in inches, to convert to millimeters, multiply by 25.4 -6- | [IM & U elect yee