BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits BVDSS RDS(ON) max -50V 10 @ VGS = -5V ID TA = +25C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) The BSS84Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/ Applications Mechanical Data General Purpose Interfacing Switch Power Management Functions Analog Switch Case: SOT23 Case Material: UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish (Lead Free Plating) Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.009 grams (Approximate) SOT23 D D G S G S Top View Equivalent Circuit Top View Ordering Information (Note 4) Part Number BSS84-7-F BSS84Q-7-F BSS84-13-F BSS84Q-13-F Notes: Qualification Commercial Automotive Commercial Automotive Case SOT23 SOT23 SOT23 SOT23 Packaging 3000/Tape & Reel 3000/Tape & Reel 10000/Tape & Reel 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information K84 = Product Type Marking Code YM or YM= Date Code Marking Y or Y = Year (ex: G = 2019) M = Month (ex: 9 = September) Date Code Key Year 1998 Code J Month Code Jan 1 ~ ~ Feb 2 BSS84 Document number: DS30149 Rev. 23 - 2 2016 D Mar 3 2017 E Apr 4 2018 F May 5 Jun 6 1 of 6 www.diodes.com 2019 G Jul 7 2020 H Aug 8 2021 I Sep 9 2022 J Oct O 2023 K Nov N Dec D October 2019 (c) Diodes Incorporated BSS84 Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Drain-Source Voltage Drain-Gate Voltage RGS 20k Gate-Source Voltage Drain Current (Note 5) Pulsed Drain Current Symbol VDSS VDGR VGSS ID IDM Continuous Continuous Value -50 -50 20 -130 -1.2 Unit V V V mA A Value 300 417 -55 to +150 Unit mW C/W C Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Symbol PD RJA TJ, TSTG Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit BVDSS -1 -2 -100 A A nA 10 nA VGS = 0V, ID = -250A VDS = -50V, VGS = 0V, TJ = +25C VDS = -50V, VGS = 0V, TJ = +125C VDS = -25V, VGS = 0V, TJ = +25C VGS = 20V, VDS = 0V VDS = VGS, ID = -1mA VGS = -5V, ID = -0.100A VDS = -25V, ID = -0.1A Zero Gate Voltage Drain Current IDSS Gate-Body Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-Off Delay Time IGSS -50 VGS(TH) RDS(ON) gFS -0.8 0.05 -2.0 10 V S Ciss Coss Crss Rg Qg Qg Qgs Qgd 24.6 4.7 2.8 916 0.28 0.59 0.09 0.08 10 18 45 25 12 pF pF pF nC nC nC nC ns ns Notes: tD(ON) tD(OFF) V Test Condition VDS = -25V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -10V, ID = -0.1A VDD = -30V, ID = -0.27A, RGEN = 50, VGS = -10V 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown in Diodes Incorporated's package outline PDFs, which can be found on our website at http://www.diodes.com/package-outlines.html. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. BSS84 Document number: DS30149 Rev. 23 - 2 2 of 6 www.diodes.com October 2019 (c) Diodes Incorporated BSS84 400 -600 ID, DRAIN-SOURCE CURRENT (mA) PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 -500 -400 -300 -200 -100 0 0 -1 -2 -3 -4 -5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2 Drain-Source Current vs. Drain-Source Voltage 50 75 100 125 150 175 200 C)) TA, AMBIENT TEMPERATURE ( ( Fig. 1 Max Power Dissipation vs. Ambient Temperature 0 25 10 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE () -1.0 ID, DRAIN-CURRENT (A) -0.8 -0.6 -0.4 -0.2 0.0 0 9 8 7 6 5 4 3 2 TA = 125C 1 0 -1 -2 -3 -4 -5 -6 -7 -8 VGS, GATE-SOURCE VOLTAGE (V) Fig. 3 Drain-Current vs. Gate-Source Voltage 15 TA = 25C 0 -2 -3 -4 -5 -1 VGS, GATE-SOURCE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage 25.0 VGS = -10V ID = -0.13A RDS(ON), ON-RESISTANCE () RDS(ON), ON-RESISTANCE () 12 9 6 3 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( ( C)) Fig. 5 On-Resistance vs. Junction Temperature BSS84 Document number: DS30149 Rev. 23 - 2 3 of 6 www.diodes.com 20.0 15.0 10.0 5.0 0.0 0.0 -0.2 -0.4 -0.6 -0.8 ID, DRAIN-CURRENT (A) Fig. 6 On-Resistance vs. Drain-Current -1.0 October 2019 (c) Diodes Incorporated BSS84 100 10 9 8 Ciss 7 VGS (V) CT, JUNCTION CAPACITANCE (pF) f = 1MHz 10 Coss 6 5 4 3 VDS = -10V, ID = -0.1A 2 Crss 1 0 1 0 5 10 15 20 25 30 35 40 0 0.1 0.2 0.3 0.4 VDS, DRAIN-SOURCE VOLTAGE (V) Qg (nC) Fig. 7 Typical Junction Capacitance Fig. 8 Gate Charge 0.5 0.6 10 ID, DRAIN CURRENT (A) RDS(ON) Limited 1 PW = 100s PW = 1ms PW = 10ms 0.1 PW = 100ms TJ(Max) = 150 TC = 25 Single Pulse DUT on 1*MRP Board VGS = -10V 0.01 PW = 1s PW = 10s DC 0.001 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 SOA, Safe Operation Area BSS84 Document number: DS30149 Rev. 23 - 2 4 of 6 www.diodes.com October 2019 (c) Diodes Incorporated BSS84 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7 H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D G F SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0 8 -All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y Dimensions C X X1 Y Y1 C Y1 X BSS84 Document number: DS30149 Rev. 23 - 2 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 5 of 6 www.diodes.com October 2019 (c) Diodes Incorporated BSS84 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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