BSS84
Document number: DS30149 Rev. 23 - 2
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www.diodes.com
October 2019
© Diodes Incorporated
BSS84
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
RDS(ON) max
ID
TA = +25°C
-50V
10 @ VGS = -5V
-130mA
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
Ordering Information (Note 4)
Part Number
Qualification
Case
Packaging
BSS84-7-F
Commercial
SOT23
3000/Tape & Reel
BSS84Q-7-F
Automotive
SOT23
3000/Tape & Reel
BSS84-13-F
Commercial
SOT23
10000/Tape & Reel
BSS84Q-13-F
Automotive
SOT23
10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Date Code Key
Year
1998
~
2016
2017
2018
2019
2020
2021
2022
2023
Code
J
~
D
E
F
G
H
I
J
K
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
SOT23
Top View
Equivalent Circuit
Top View
D
GS
K84 = Product Type Marking Code
YM or YM= Date Code Marking
Y or Y = Year (ex: G = 2019)
M = Month (ex: 9 = September)
e3
D
S
G
BSS84
Document number: DS30149 Rev. 23 - 2
2 of 6
www.diodes.com
October 2019
© Diodes Incorporated
BSS84
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-50
V
Drain-Gate Voltage RGS 20k
VDGR
-50
V
Gate-Source Voltage Continuous
VGSS
±20
V
Drain Current (Note 5) Continuous
ID
-130
mA
Pulsed Drain Current
IDM
-1.2
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
PD
300
mW
Thermal Resistance, Junction to Ambient
RJA
417
C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BVDSS
-50
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
IDSS

-1
-2
-100
µA
µA
nA
VDS = -50V, VGS = 0V, TJ = +25°C
VDS = -50V, VGS = 0V, TJ = +125°C
VDS = -25V, VGS = 0V, TJ = +25°C
Gate-Body Leakage
IGSS
±10
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
VGS(TH)
-0.8
-2.0
V
VDS = VGS, ID = -1mA
Static Drain-Source On-Resistance
RDS(ON)
10
VGS = -5V, ID = -0.100A
Forward Transconductance
gFS
0.05
S
VDS = -25V, ID = -0.1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Ciss
24.6
45
pF
VDS = -25V, VGS = 0V, f = 1.0MHz
Output Capacitance
Coss
4.7
25
pF
Reverse Transfer Capacitance
Crss
2.8
12
pF
Gate Resistance
Rg

916
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = -4.5V)
Qg
0.28
nC
VDS = -10V, ID = -0.1A
Total Gate Charge (VGS = -10V)
Qg
0.59
nC
Gate-Source Charge
Qgs
0.09
nC
Gate-Drain Charge
Qgd
0.08
nC
Turn-On Delay Time
tD(ON)
10
ns
VDD = -30V, ID = -0.27A,
RGEN = 50, VGS = -10V
Turn-Off Delay Time
tD(OFF)
18
ns
Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown in Diodes Incorporated’s package outline PDFs, which can be found
on our website at http://www.diodes.com/package-outlines.html.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
BSS84
Document number: DS30149 Rev. 23 - 2
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October 2019
© Diodes Incorporated
BSS84
0
50
100
25 50 75 100 125 150 175 200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (
癈
)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
A
150
200
250
300
350
0
400
0
-600
-500
-400
-300
-200
-100
0-2-1 -5-4-3
I , DRAIN-SOURCE CURRENT (mA)
D
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 2 Drain-Source Current vs. Drain-Source Voltage
DS
0.0
-1.0
-0.8
-0.6
-0.4
-0.2
0-2 -3 -4-1 -8-7
-6-5
I , DRAIN-CURRENT (A)
D
V , GATE-SOURCE VOLTAGE (V)
Fig. 3 Drain-Current vs. Gate-Source Voltage
GS
0
1
2
4
5
3
6
8
7
10
9
0-1 -2 -3 -4 -5
V , GATE-SOURCE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
GS
T = 25 C
A °
T = 125 C
A°
R , NORMALIZED DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
0
3
6
9
12
15
-50 -25 0 25 50 12510075 150
T , JUNCTION TEMPERATURE (
癈
)
Fig. 5 On-Resistance vs. Junction Temperature
J
V = -10V
I = -0.13A
GS
D
R , ON-RESISTANCE ( )
DS(ON)
0.0
5.0
10.0
0.0 -0.2 -0.4 -0.6 -0.8 -1.0
I , DRAIN-CURRENT (A)
Fig. 6 On-Resistance vs. Drain-Current
D
15.0
20.0
25.0
R , ON-RESISTANCE ( )
DS(ON)
(°C)
(°C)
BSS84
Document number: DS30149 Rev. 23 - 2
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October 2019
© Diodes Incorporated
BSS84
1
10
100
0 5 10 15 20 25 30 35 40
CT, JUNCTION CAPACITANCE (pF)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 7 Typical Junction Capacitance
f = 1MHz
Ciss
Coss
Crss
0
1
2
3
4
5
6
7
8
9
10
0 0.1 0.2 0.3 0.4 0.5 0.6
VGS (V)
Qg (nC)
Fig. 8 Gate Charge
VDS = -10V, ID = -0.1A
0.001
0.01
0.1
1
10
0.1 1 10 100
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 SOA, Safe Operation Area
TJ(Max) = 150
℃
TC = 25℃
Single Pulse
DUT on 1*MRP
Board
VGS = -10V
RDS(ON)
Limited
DC
PW = 10s
PW = 1s
PW = 100ms
PW = 10ms
PW = 1ms
PW = 100µs
BSS84
Document number: DS30149 Rev. 23 - 2
5 of 6
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October 2019
© Diodes Incorporated
BSS84
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03
0.915
F
0.45
0.60
0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013
0.10
0.05
K
0.890
1.00
0.975
K1
0.903
1.10
1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085
0.150
0.110
a
0°
8°
--
All Dimensions in mm
Dimensions
Value (in mm)
C
2.0
X
0.8
X1
1.35
Y
0.9
Y1
2.9
J
K1 K
L1
GAUGE PLANE
0.25
H
L
M
All 7°
A
CB
D
G
F
a
X
Y
Y1 C
X1
BSS84
Document number: DS30149 Rev. 23 - 2
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October 2019
© Diodes Incorporated
BSS84
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