BL GALAXY ELECTRICAL US3AB---US3MB 1111REVERSE VOLTAGE: 50 - 1000 V FORWARD CURRENT: 3.0 A SURFACE MOUNT RECTIFIER FEATURES DO-214AB(SMB) Plastic package has Underwriters Laboratories vvvvvFlam mability Classification 94V-0 For surface mount applications Glass passivated chip junctions Low profile package Easy pick and place Ultrafast recovery times for high efficiency Low forward voltage,low power loss Built-in strain relief,ideal for autom ated placem ent High temperature soldering: 111 250 oC/10 seconds on terminals MECHANICAL DATA Case:JEDEC DO-214AB,molded plastic body over 111 passivated chip Term inals:Solder Plated, solderable per MIL-STD-750, 1111Method 2026 Polarity: Color band denotes cathode end Weight: 0.003 ounces, 0.093 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 oC ambient tem perature unless otherwise specified US3AB US3BB US3DB US3GB US3JB US3KB US3MB UNITS US3AB US3BB US3DB US3GB US3JB US3KB US3MB Device marking code Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRWS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forw ard rectified current at TL=110OC IF(AV) 3.0 A Peak forw ard surge current 8.3ms single halfsine-w ave superimposed on rated load(JEDEC Method) IFSM 100.0 A Maximum instantaneous forw ard voltage at 3A VF Maximum DC reverse current at rated DC blockjing voltage @TA =25oC @TA =100oC 1.0 1.7 10.0 IR V A 50.0 Maximum reverse recovery time at IF=0.5A IR=1.0A Irr=0.25A trr 50 75 ns Typical junction capacitance at 4.0V,1MHZ CJ 70 50 pF Maximum thermal resistance (NOTE1) Operating temperature range Storage temperature range C/W 25 TJ -55--------+150 o TSTG -55--------+150 o NOTE: 1.P.C.B.mounted on 0.2X0.2"(5.0X5.0mm)copper pad area Document Number 0280036 o R BLGALAXY ELECTRICAL C C www.galaxycn.com 1. RATINGS AND CHARACTERISTIC CURVES FIG.2 -- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG.1 -- FORWARD CURRENT DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT,AMPERES US3AB---US3MB 3 .0 100 PEAK FORWARD SURGE CURRENT,AMPERES R E S IS T IV E O R IN D U C T IV E LOAD 2 .5 2 .0 1 .5 1 .0 0 .5 0 .2 X 0 .2 "(5 .0 X 5 .0 m m ) COPPER PAD AREAS 0 0 25 50 75 100 125 TL=110 8.3ms SINGLE HALF SINE-WAVE (JEDEC METHOD) 50 150 0 1 LEAD TEMPERATURE FIG.4 -- TYPICAL REVERSE CHARACTERISTICS 1 US3JB-US3MB 0.1 0.01 PULSE WIDTH=300 s1%DUTY CYCLE TJ =25 0.8 1.0 1.2 1.4 1.6 100 INSTANTANEOUS REVERSE LEAKAGE CURRENT(mA) US3AB-US3GB TJ=125 10 125 100 1 25 0.1 0.01 0 1.8 20 40 60 80 100 INSTANTANEOUS FORWARD VOLTAGE(V) PERCENT OF RATED PEAK REVERSE VOLTAGE.( ) FIG.5 -- TYPICAL JUNCTION CAPACITANCE FIG.6 -- TYPICAL TRANSIENT THERMAL IMPEDANCE 200 100 60 40 US3AB-US3JB 20 10 6 4 TJ=25 US3KB,US3MB 2 1 0.1 0.2 0.4 1 2 4 10 20 REVERSE VOLTAGE(V) 40 100 TRANSIENT THERMAL IMPEDANCE (OC/W) PF-JUNCTION CAPACITANCE(pF) INSTANTANEOUS FORWARD CURRENT,AMPERES 10 0.6 100 NUMBER OF CYCLES AT 60HZ FIG.3 -- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 0.001 0.4 10 100 10 1 0.1 0.01 0.1 1 10 100 T,PULSE DURATION, www.galaxycn.com Document Number 0280036 BLGALAXY ELECTRICAL 2.