www.vishay.com Document Number: 91062
2S11-1049-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF830AS, IRF830AL, SiHF830AS, SiHF830AL
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
d. Uses SiHF830A data and test conditions.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient
(PCB Mounted, Steady-State)aRthJA -40
°C/W
Maximum Junction-to-Case (Drain) RthJC -1.7
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 μA 500 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mAd-0.60-V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.5 V
Gate-Source Leakage IGSS V
GS = ± 30 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 500 V, VGS = 0 V - - 25 μA
VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250
Drain-Source On-State Resistance RDS(on) V
GS = 10 V ID = 3.0 Ab--1.4
Forward Transconductance gfs VDS = 50 V, ID = 3.0 Ad2.8 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5d
- 620 -
pFOutput Capacitance Coss -93-
Reverse Transfer Capacitance Crss -4.3-
Output Capacitance Coss VGS = 0 V
VDS = 1.0 V, f = 1.0 MHz - 886 -
VDS = 400 V, f = 1.0 MHz - 27 -
Effective Output Capacitance Coss eff. VDS = 0 V to 400 Vc, d -39-
Total Gate Charge Qg
VGS = 10 V ID = 5.0 A, VDS = 400 V,
see fig. 6 and 13b, d
--24
nC Gate-Source Charge Qgs --6.3
Gate-Drain Charge Qgd --11
Turn-On Delay Time td(on)
VDD = 250 V, ID = 5.0 A,
Rg = 14 , RD = 49 , see fig. 10b, d
-10-
ns
Rise Time tr -21-
Turn-Off Delay Time td(off) -21-
Fall Time tf -15-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISMOSFET symbol
showing the
integral reverse
p - n junction diode
--5.0
A
Pulsed Diode Forward CurrentaISM --20
Body Diode Voltage VSD TJ = 25 °C, IS = 5.0 A, VGS = 0 Vb--1.5V
Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 5.0 A, dI/dt = 100 A/μsb, d - 430 650 ns
Body Diode Reverse Recovery Charge Qrr -2.03.0μC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
S
D
G