G E SOLID STATE 01 De ffss7soa, coisas 2 &f Optoelectronic Specifications a 7 Light Detector Planar Silicon Photo-Darlington Amplifier BPW38 The GE Solid State BPW38 is a supersensitive NPN Planar Silicon. Photodarlington Amplifier, For many applications, only the collector and emitter leads are used; however, a base lead is provided to control sensitivity and the gain of the device. The BPW38 is a TO-I8 style hermetically sealed package with lens id: cap and is designed to be used in opto-electronic sensing applications requiring zy very high sensitivity. ae absolute maximum ratings: (25C unless otherwise specified) ' VOLTAGES DARK CHARACTERISTICS couse roR gov O-_+ Collector to Emitter Voltage. Vcro 25 yoits TO CASE 4c (3) Collector to Base Voltage Vcso 25 volts Emitter to Base Voltage VeEso 12 volts (298 CURRENTS fn Light Current Ir 200 mA DISSIPATIONS Power Dissipation (Ta = 25C)* Py 300 mW Power Dissipation (Tc = 25C)** Py 600 mW TEMPERATURES Junction Temperature Ty 150 c Storage Temperature Tstc 65t0150 C *Derate 2.4 mW/C above 25C ambient, **Derate 4.8 mW/C above 25C case. electrical characteristics: (25C unless otherwise specified) NOTES. STATIC CHARACTERISTICS MIN. MAX. 1, Mooswed from mari orerioae LIGHT CURRENT . (aaa stor s O28 G0Ormiociow. (Wes = SV, Bet = 0.2 mW/em!) h frst Prone} ini ae pesfon PA Cn IV Tn=0) tb too nA foment E*~ 74B _ EMITTER-BASE BREAKDOWN VOLTAGE (Ip = 100A) . Vipr)EBO 12 - V COLLECTOR-BASE BREAKDOWN VOLTAGE (Ig = 100A) Ver)cBo 23% - Vv COLLECTOR-EMITTER BREAKDOWN VOLTAGE (ig = 10mA) V@r)cEO 2 - =#2Y SWITCHING CHARACTERISTICS (see Switching Circuit) SWITCHING SPEEDS (Wee = 10V, ly = 10 mA, Ry = 1008) DELAY TIME td - 50 psec RISE TIME tr 300 psec STORAGE TIME ts - 10 psec FALL TIME te 250 psec Ee = Radiation Flux Density. Radiation source is an unfiltered tungsten filament bulb at 2870K color temperature. NOTE: The 2870K radiation is 25% effective on the phofodarlington; Le., a GaAs source of 0,05 mWwyjem? is equivalent to this 0.2 mW jem? tungsten source, 338G E SOLID STATE BPWs8 TYPICAL ELECTRICAL CHARACTERISTICS J, NORMALIZED LIGHT CURRENT TO: Veg ke 2mvseme Veg = COLLECTOR TO EMITTER = VOLTS 1, LIGHT CURRENT VS. COLLECTOR TO EMITTER VOLTAGE 10 O98 wi 5 0.8 g oO? = J O68 : O68 o4 E os WO2 6.1 300 800 600 700 800 900 {ooo ~s too A= WAVELENGTH - NANOMETERS 3, SPECTRAL RESPONSE CURVE 1200 vi srwse_ | s0% INPUT ee LED Se 10% TESRL OUTPUT q 9 INPUT PULSE | = font tattr torr stat te 5, TEST CIRCUIT AND VOLTAGE WAVEFORMS ol de fsa7soa1 ooisais 4 _. Optoelectronic Specifications T4PS ro 2 BDO WD 2 Oe o Vor * Eo = ,2mW/emt 2 00. > ao: Iy./T,, @ 25C - RELATIVE LIGHT CURRENT vn 85 0 25 60 76 T > TEMPERATURE = *C 2. RELATIVE LIGHT CURRENT VS. AMBIENT TEMPERATURE 110 100 90 8 80 70 = = 60 < w 2 50 40 30 20 lo =90 =70 -5o -30" -10 10* 30 6O* 70 90 DEGREES 4, ANGULAR RESPONSE NORMALIZED TO: A, = 1000 IL * lomA TL LIGHT CURRENT - mA Veo RELATIVE SPEED ig + 8 LIGHT CURRENT VS, RELATIVE SWITCHING SPEED