PAGE . 1November 09,2010-REV.01
BSS138W
50V N-Channel Enhancement Mode MOSFET - ESD Protected
Maximum Ratings and Thermal Characteristics (TA=25OC unless otherwise noted )
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
PARAMETER Symbol Limit Units
Drain-Source Voltage V
DS
50 V
Gate-Source Voltage V
GS
+20 V
Continuous Drain Current I
D
300 mA
Pulsed Drain Current
1)
I
DM
2000 mA
Maximum Power Dissipation T
A
=25
O
C
T
A
=75
O
CP
D
350
210 mW
Operating Junction and Storage Temperature
Range T
J
,T
STG
-55 to + 150
O
C
Juncti on-to Ambient Thermal Resi stance(PCB mounted)
2
R
θJA
357
O
C/W
• /HDGIUHHLQFRPSO\ZLWK(85R+6(&GLUHFWLYHV
*UHHQPROGLQJFRPSRXQGDVSHU,(&6WG+DORJHQ)UHH
FEATURES
• RDS(ON), VGS@10V,IDS@500mA=3Ω
• RDS(ON), VGS@4.5V,IDS@200mA=4Ω
• RDS(ON), VGS@2.5V,IDS@100mA=6Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected
MECHANICAL DATA
• Case: SOT-323 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : 38W
• Apporx. Weight: 0.000 ounceV, 0.005 gramV
SOT-323
Unit inch(mm):
0.087(2.20)
0.070(1.80)
0.054(1.35)
0.045(1.15)
0.056(1.40)
0.047(1.20)
0.004(0.10)MAX.
0.004(0.10)MIN.
0.087(2.20)
0.078(2.00)
0.006(0.15)
0.002(0.05)
0.016(0.40)
0.008(0.20)
0.044(1.10)
0.035(0.90)