PAGE . 1November 09,2010-REV.01
BSS138W
50V N-Channel Enhancement Mode MOSFET - ESD Protected
Maximum Ratings and Thermal Characteristics (TA=25OC unless otherwise noted )
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
PARAMETER Symbol Limit Units
Drain-Source Voltage V
DS
50 V
Gate-Source Voltage V
GS
+20 V
Continuous Drain Current I
D
300 mA
Pulsed Drain Current
1)
I
DM
2000 mA
Maximum Power Dissipation T
A
=25
O
C
T
A
=75
O
CP
D
350
210 mW
Operating Junction and Storage Temperature
Range T
J
,T
STG
-55 to + 150
O
C
Juncti on-to Ambient Thermal Resi stance(PCB mounted)
2
R
θJA
357
O
C/W
• /HDGIUHHLQFRPSO\ZLWK(85R+6(&GLUHFWLYHV
*UHHQPROGLQJFRPSRXQGDVSHU,(&6WG+DORJHQ)UHH
FEATURES
• RDS(ON), VGS@10V,IDS@500mA=3Ω
• RDS(ON), VGS@4.5V,IDS@200mA=4Ω
• RDS(ON), VGS@2.5V,IDS@100mA=6Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected
MECHANICAL DATA
• Case: SOT-323 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : 38W
• Apporx. Weight: 0.000 ounceV, 0.005 gramV
SOT-323
Unit inch(mm)：
0.087(2.20)
0.070(1.80)
0.054(1.35)
0.045(1.15)
0.056(1.40)
0.047(1.20)
0.004(0.10)MAX.
0.004(0.10)MIN.
0.087(2.20)
0.078(2.00)
0.006(0.15)
0.002(0.05)
0.016(0.40)
0.008(0.20)
0.044(1.10)
0.035(0.90)
PAGE . 2November 09,2010-REV.01
BSS138W
ELECTRICAL CHARACTERISTICS
VDD
VOUT
VIN
RG
RL
Switching
Test Circuit
Gate Charge
Test Circuit
VDD
VGS
RG
RL
1mA
Parameter Symbol Test Condition Min. Typ. Max. Units
Static
Drain-Source Breakdown
Voltage BVDSS VGS=0V , ID=10uA 50 - - V
Gate Threshold Voltage VGS(th) VDS=VGS , ID=250uA 0.8 - 1.5 V
Drain-Source On-State
Resistance RDS(on) VGS=2 .5 V , I D=100mA - 2.8 6.0
Ω
Drain-Source On-State
Resistance RDS(on) VGS=4.5V , I D=200mA - 1.8 4.0
Drain-Source On-State
Resistance RDS(on) VGS=10V , I D=500mA - 1.6 3.0
Zero Gate Voltage Drain
Current IDSS VDS=50V , VGS=0V - - 1 μA
Gate Body Leakage IGSS VGS=+20V , VDS=0V - - +10 μA
Forward Transconductance gfS VDS=10V , ID=250mA 100 - - mS
Dynamic
Total Gate Charge QgVDS=25V, ID=250mA
VGS=4.5V --1.0nC
Turn-On Time ton VDD=3 0 V , RL=100Ω
ID=30 0mA , VGEN=10V
RG=6Ω
--40
ns
Turn-Off Time toff - - 150
Input Capacitance Ciss
VDS=25V , VGS=0V
f=1.0MHZ
--50
pF
Output Capacitance Coss --10
Reverse Transfer
Capacitance Crss --5
Source-Drain Diode
Diode Forward Voltage VSD IS=250mA , VGS=0V - 0.82 1.2 V
Continuous Diode Forward
Current IS---300mA
Pulse Diode Forward
Current ISM ---2000mA
PAGE . 3November 09,2010-REV.01
BSS138W
Fig. 1-TYPICAL FORWARD CHARACTERISTIC
FIG.1- Output Characteristic
FIG.1- Output Characteristic
Typical Characteristics Curves (T =25 C,unless otherwise noted)
A
O
Typical Characteristics Curves (T =25 C,unless otherwise noted)
A
O
FIG.2- Transfer Characteristic
FIG.3- On Resistance vs Drain Current
FIG.3- On Resistance vs Drain Current
FIG.4- On Resistance vs Gate to Source Voltage
FIG.4- On Resistance vs Gate to Source Voltage
FIG.5- On Resistance vs Junction Temperature
FIG.5- On Resistance vs Junction Temperature
I -Drain-to-Source Current (A)
D
012345
0
0.2
0.4
0.6
0.8
1.0
1.2
3.0V
V - Drain-to-Source Voltage (V)
DS
0
0.2
0.4
0.6
0.8
1
0123456
V
DS
=10V
T
J
=25
o
C
V - Gate-to-Source Voltage (V)
GS
I -Drain-to-Source Current (A)
D
0
1
2
3
4
5
0 0.2 0.4 0.6 0.8 1 1.2
I - Drain Current (A)
D
V =4.5V
GS
R - On Resistance ( )
DS(ON)
W
V =10V
GS
0
1
2
3
4
5
0246810
V - Gate-to-Source Voltage (V)
GS
I =200mA
D
I =500mA
D
R - On Resistance ( )
DS(ON)
W
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
T - Junction Temperature ( C)
J
O
V
GS
=10 V
I
D
=500mA
R -On-Resistance(Normalized)
DS(ON)
V =10V~4.0V
GS
PAGE . 4November 09,2010-REV.01
BSS138W
Fig.6 - Gate Charge Waveform
Fig.6 -Gate Charge Waveform
Fig.8 - Threshold Voltage vs Temperature
Fig.8 - Threshold Voltage vs Temperature
Fig.9 - Breakdown Voltage vs Junction Temperature
Fig.9 -Breakdown Voltage vs Junction Temperature
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1 1.2
Q - Gate Charge (nC)
g
IA
D=250m
V - Gate-to-Source Voltage(V)
GS
Fig.7 Source-Drain Diode Forward Voltage
Fig.7 Source-Drain Diode Forward Voltage
0.01
0.1
1
0.2 0.4 0.6 0.8 1 1.2 1.4
V - Source-to-Drain Voltage (V)
SD
T=125C
J
O
V=0V
GS
I - Source Current (A)
S
T=-55C
J
O
T=25C
J
O
0.7
0.8
0.9
1.1
1.2
-50 -25 0 25 50 75 100 125 150
T - Junction Temperature ( C)
J
O
I=250A
D
m
0.9
0.95
1
1.05
1.1
1.15
1.2
-50 -25 0 25 50 75 100 125 150
T - Junction Temperature ( C)
J
O
I=250A
D
m
1.0
V - G-S Threshold Voltage(Normalized)
th
BV - Breakdown Voltage(Normlized)
DSS
Fig.10 - Capacitance vs Drain to Source Voltage
Fig.10 -Capacitance vs Drain to Source Voltage
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0
10
20
30
40
50
0 5 10 15 20 25
Ciss
f=1MHz
V
GS
=0V
Crss
Coss
PAGE . 5
November 09,2010-REV.01
MOUNTING PAD LAYOUT
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
ORDER INFORMATION
LEGAL STATEMENT
Copyright PanJit International, Inc 2012
The information presented in this document is believed to be accurate and reliable. The specifications and information herein are
subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for
any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any
license under its patent rights or rights of others.
BSS138W
SOT-323
0.026
(0.66)
0.073
(1.85)
0.034
(0.86)
0.026
(0.65)
0.026
(0.65)
Unit inch(mm)：
PAGE . 6
Part No_packing code_Version
For example :
RB500V-40_R2_
Serial number
Part No. Version code means HF
Packing size code means 13"
Packing type means T/R
Packing
type 1st Code Packing size
code 2nd Code HF or RoHS 1st Code 2nd~5th Code
T/B AN/A 0HF 0 serial number
T/R R7" 1RoHS 1 serial number
B/P B13" 2
T/P T26mm X
TRR S52mm Y
TRL LPBCU U
FORMING FPBCD D
Packing Code XX Version Code XXXXX
0000
BSS138W
November 09,2010-REV.01