E2 MMPQ2907A C2 B2 E1 C1 C1 E1 C2 SC70-6 Mark: .2F B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 SuperSOT-6 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. SOIC-16 Mark: MMPQ2907A Mark: .2F pin #1 C1 C2 C1 C3 C2 C4 C4 C3 Dot denotes pin #1 FFB2907A / FMB2907A / MMPQ2907A FMB2907A FFB2907A PNP Multi-Chip General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 600 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die 1998 Fairchild Semiconductor Corporation Max FFB2907A 300 2.4 415 FMB2907A 700 5.6 180 Units MMPQ2907A 1,000 8.0 125 240 mW mW/C C/W C/W C/W 4 (continued) Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)CEO IC = 10 mA, IB = 0 V(BR)CBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage 60 V V(BR)EBO Emitter-Base Breakdown Voltage IC = 10 A, IE = 0 60 V IE = 10 A, IC = 0 5.0 IB Base Cutoff Current VCB = 30 V, VEB = 0.5 V ICEX Collector Cutoff Current VCE = 30 V, VBE = 0.5 V ICBO Collector Cutoff Current VCB = 50 V, IE = 0 VCB = 50 V, IE = 0, TA = 125C V 50 nA 50 nA 0.02 20 A A ON CHARACTERISTICS hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage* VBE(sat) Base-Emitter Saturation Voltage IC = 0.1 mA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V* IC = 500 mA, VCE = 10 V* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA* IC = 500 mA, IB = 50 mA 75 100 100 100 50 300 0.4 1.6 1.3 2.6 V V V V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Cobo Output Capacitance Cibo Input Capacitance IC = 50 mA, VCE = 20 V, f = 100 MHz VCB = 10 V, IE = 0, f = 100 kHz VEB = 2.0 V, IC = 0, f = 100 kHz 250 MHz 6.0 pF 12 pF SWITCHING CHARACTERISTICS ton Turn-on Time VCC = 30 V, IC = 150 mA, 30 ns td Delay Time IB1 = 15 mA 8.0 ns tr Rise Time 20 ns toff Turn-off Time VCC = 6.0 V, IC = 150 mA 80 ns ts Storage Time IB1 = IB2 = 15 mA 60 ns tf Fall Time 20 ns *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Spice Model PNP (Is=650.6E-18 Xti=3 Eg=1.11 Vaf=115.7 Bf=231.7 Ne=1.829 Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 Nc=2 Isc=0 Ikr=0 Rc=.715 Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 Cje=19.82p Mje=.3357 Vje=.75 Tr=111.3n Tf=603.7p Itf=.65 Vtf=5 Xtf=1.7 Rb=10) FFB2907A / FMB2907A / MMPQ2907A PNP Multi-Chip General Purpose Amplifier (continued) 500 VCE = 5V 400 125 C 300 200 100 0 0.1 25 C - 40 C 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 Base-Emitter Saturation Voltage vs Collector Current 1 - 40 C 0.8 25 C 0.6 125 C 0.4 = 10 0.2 0 1 10 100 I C - COLLECTOR CURRENT (mA) 500 VCESAT - COLLECTOR EMITTE R VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current Collector-Emitter Saturation Voltage vs Collector Current 0.5 = 10 0.4 0.3 25 C 0.2 0.1 125 C - 40 C 0 V BE( ON)- BAS E EMITTER ON VOLTAGE (V) V BESAT - BASE EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics 1 500 Base Emitter ON Voltage vs Collector Current 1 0.8 0.6 0.4 - 40 C 25 C 0 0.1 4 125 C VCE = 5V 0.2 1 10 I C - COLLECTOR CURRE NT (mA) 25 Input and Output Capacitance vs Reverse Bias Voltage Collector-Cutoff Current vs Ambient Temperature 20 100 V CB = 35V CAPACITANCE (pF) I CBO - COLLE CTOR CURRENT (nA) 10 100 I C - COLLECTOR CURRE NT (mA) 10 1 0.1 0.01 25 50 75 100 T A - AMBIE NT TEMP ERATURE ( C) 125 FFB2907A / FMB2907A / MMPQ2907A PNP Multi-Chip General Purpose Amplifier 16 12 C ib 8 4 0 0.1 C ob 1 10 REVERSE BIAS VOLTAGE (V) 50 (continued) Typical Characteristics (continued) Switching Times vs Collector Current 250 I B1 = I B2 = Turn On and Turn Off Times vs Collector Current 500 Ic I B1 = I B2 = 10 400 200 V cc = 15 V ts 150 TIME (nS) TIME (nS) V cc = 15 V 100 tr 300 200 tf t off 100 50 t on td 0 10 100 I C - COLLECTOR CURRENT (mA) 0 10 1000 50 20 t r = 15 V 5 30 ns 2 60 ns 1 10 100 I C - COLLECTOR CURRENT (mA) 100 I C - COLLECTOR CURRENT (mA) 1000 Power Dissipation vs Ambient Temperature PD - POWE R DIS SIPATION (W) I B1 - TURN 0N BASE CURRENT (mA) Rise Time vs Collector and Turn On Base Currents 10 Ic 10 500 1 SOIC-16 SOT-6 0.75 0.5 SC70 -6 0.25 0 0 25 50 75 100 TE MPE RATURE (C) 125 150 FFB2907A / FMB2907A / MMPQ2907A PNP Multi-Chip General Purpose Amplifier (continued) h oe h re 2 h fe 1 0.5 h ie 0.2 VCE = -10 V T A = 25 oC 0.1_ 1 _ _ _ _ 2 5 10 20 I C - COLLECTOR CURRENT (mA) _ 50 CHAR. RELATIVE TO VALUES AT VCE = -10V Common Emitter Characteristics 5 CHAR. RELATIVE TO VALUES AT TA = 25oC CHAR. RELATIVE TO VALUES AT I C= -10mA Typical Common Emitter Characteristics (f = 1.0kHz) Common Emitter Characteristics 1.3 1.2 h re and hoe h re h ie h fe hoe 1.1 1 h ie 0.9 I C = -10mA T A = 25oC h fe 0.8 -4 -8 -12 -16 V CE - COLLECTOR VOLTAGE (V) -20 FFB2907A / FMB2907A / MMPQ2907A PNP Multi-Chip General Purpose Amplifier Common Emitter Characteristics 1.5 I C = -10mA 1.4 V = -10 V CE 1.3 1.2 h fe h ie h re hoe 1.1 hoe 1 0.9 0.8 4 h re h ie 0.7 0.6 0.5 -40 h fe -20 0 20 40 60 80 T A - AMBIENT TEMPERATURE ( o C) 100 (continued) Test Circuits - 30 V 200 1.0 K 0 - 16 V 50 200ns FIGURE 1: Saturated Turn-On Switching Time Test Circuit 1.5 V 1 K - 6.0 V 37 1.0 K 0 - 30 V 50 200ns FIGURE 2: Saturated Turn-Off Switching Time Test Circuit FFB2907A / FMB2907A / MMPQ2907A PNP Multi-Chip General Purpose Amplifier TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G