DMN2004DWK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features BVDSS RDS(ON) max 20V 0.55 @ VGS = 4.5V * * * * * * * * * * * ID TA = +25C 540mA Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High-Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMN2004DWKQ) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making * * it ideal for high-efficiency power management applications. * * * * Load Switch * Case: SOT363 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - Matte Tin Annealed over Alloy 42 LeadFrame. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.006 grams (Approximate) SOT363 ESD PROTECTED TO 2kV D2 G1 S1 S2 G2 D1 Top View Internal Schematic Top View Ordering Information (Note 4) Part Number DMN2004DWK-7 Notes: Case SOT363 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information NAB = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: H = 2020) M = Month (ex: 9 = September) NAB YM NAB YM Date Code Key Year 2006 Code T Month Code Jan 1 2007 U Feb 2 DMN2004DWK Document number: DS30935 Rev. 8 - 2 .... .... Mar 3 2020 H Apr 4 2021 I May 5 2022 J 2023 K 2024 L 2025 M 2026 N 2027 O 2028 P Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D 1 of 7 www.diodes.com October 2020 (c) Diodes Incorporated DMN2004DWK Maximum Ratings (@ TA = +25C, unless otherwise specified.) Symbol Value Unit Drain-Source Voltage Characteristic VDSS 20 V Gate-Source Voltage VGSS 8 V ID 540 390 mA IDM 1.5 A Symbol Value Unit PD 200 mW RJA 625 C/W TJ, TSTG -55 to +150 C TA = +25C TA = +85C Steady State Drain Current (Note 5) Pulsed Drain Current (Note 6) Thermal Characteristics (@ TA = +25C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics (@ TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit Test Condition BVDSS 20 -- -- V VGS = 0V, ID = 10A Zero Gate Voltage Drain Current IDSS -- -- 1 A VDS = 16V, VGS = 0V Gate-Source Leakage IGSS -- -- 1 A VGS = 4.5V, VDS = 0V VGS(TH) 0.5 -- 1.0 V VDS = VGS, ID = 250A RDS(ON) -- 0.4 0.5 0.7 0.55 0.70 0.9 Forward Transfer Admittance |Yfs| 200 -- -- mS Diode Forward Voltage (Note 7) VSD 0.5 -- 1.4 V Input Capacitance Ciss -- 36 150 pF Output Capacitance Coss -- 5.7 25 pF Reverse Transfer Capacitance Crss -- 4.2 20 pF 0.53 -- ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance VGS = 4.5V, ID = 540mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS (Note 7) Qg -- Total Gate Charge (VGS = 8.0V) Qg -- 0.95 -- Gate-Source Charge Qgs -- 0.08 -- Gate-Drain Charge Qgd -- 0.07 -- Turn-On Delay Time tD(ON) -- 4.1 -- ns Turn-On Rise Time tR -- 7.3 -- ns Turn-Off Delay Time tD(OFF) -- 13.8 -- ns tF -- 10.5 -- ns Total Gate Charge (VGS = 4.5V) Turn-Off Fall Time Notes: nC VDS = 16V, VGS = 0V f = 1.0MHz VDS = 10V, ID = 250mA VDD = 10V, RL = 47, VGEN = 4.5V, RGEN = 10 5. Device mounted on FR-4 PCB. 6. Pulse width 10s, Duty Cycle 1%. 7. Short duration pulse test used to minimize self-heating effect. DMN2004DWK Document number: DS30935 Rev. 8 - 2 2 of 7 www.diodes.com October 2020 (c) Diodes Incorporated ID, DRAIN CURRENT (A) DMN2004DWK 0 0 1 2 3 4 5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics VGS GATE-SOURCE VOLTAGE VOLTAGE (V) GS,, GATE-SOURCE Fig. 2 Typical Transfer Drain Current vs.Characteristic Source-Drain Voltage Fig. 2 Reverse RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE () 1 0.1 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE () Tch , CHANNEL TEMPERATURE (C) (C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature 6 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMN2004DWK Document number: DS30935 Rev. 8 - 2 3 of 7 www.diodes.com October 2020 (c) Diodes Incorporated DMN2004DWK RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.6 VGS = 4.5V, ID = 1.0A 1.4 1.2 1 VGS = 2.5V, ID = 500mA 0.8 0.6 -50 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () ID, DRAIN CURRENT (A) Fig. 7 On-Resistance vs. Drain Current and Gate Voltage Fig. 8 On-Resistance Variation with Temperature IDR, REVERSE DRAIN CURRENT (A) ZERO GATE VOLTAGE DRAIN CURRENT (nA) IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) -25 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 10 Reverse Drain Current vs. Source-Drain Voltage CT , JUNCTION CAPACITANCE (pF) |Yfs|, FORWARD TRANSFER ADMITTANCE (S) 60 50 f=1MHz Ciss 40 30 20 C oss 10 C rss 0 1000 ID, DRAIN CURRENT (mA) Fig. 11 Forward Transfer Admittance vs. Drain Current DMN2004DWK Document number: DS30935 Rev. 8 - 2 4 of 7 www.diodes.com 0 5 10 15 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 12 Typical Junction Capacitance 20 October 2020 (c) Diodes Incorporated DMN2004DWK 10 RDS(on) Limited VDS = 10V 6 ID, DRAIN CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V) V GS GATE THRESHOLD VOLTAGE (V) 8 ID = 250mA 4 2 1 DC PW = 10s PW = 1s 0.1 PW = 100ms PW = 10ms PW = 1ms TJ(m ax) = 150C 0.01 PW = 100s TA = 25C V GS = 4.5V Single Pulse DUT on 1 * MRP Board 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.001 Q g, TOTAL GATE CHARGE (nC) Figure 13 Gate Charge DMN2004DWK Document number: DS30935 Rev. 8 - 2 5 of 7 www.diodes.com 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 14 SOA, Safe Operation Area 100 October 2020 (c) Diodes Incorporated DMN2004DWK Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. E SOT363 Dim Min Max Typ A1 0.00 0.10 0.05 A2 0.90 1.00 1.00 b 0.10 0.30 0.25 c 0.10 0.22 0.11 D 1.80 2.20 2.15 E 2.00 2.20 2.10 E1 1.15 1.35 1.30 e 0.650 BSC F 0.40 0.45 0.425 L 0.25 0.40 0.30 a 0 8 -All Dimensions in mm E1 F b D A2 c L e A1 a Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. C Dimensions C G X Y Y1 G Y1 Value (in mm) 0.650 1.300 0.420 0.600 2.500 Y X DMN2004DWK Document number: DS30935 Rev. 8 - 2 6 of 7 www.diodes.com October 2020 (c) Diodes Incorporated DMN2004DWK IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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