140 Commerce Drive Montgomeryville, PA 18936: Tel: (215) 631-9840 2N4429 4431 RF & MICROWAVE POWER TRANSISTORS MICROWAVE POWER TRANSISTORS FOR CLASS C APPLICATIONS Micro: em = er ea ell Te FEATURES HIGHPOWER GAIN PACKAGE 2N4431 5W @ 1GHz MT66 2N4430 25W @ 1GHz MT66 2N4429 1W @ 1GHz TO-117A DESCRIPTION TO-117.4 (M148) MT66 (M127) This. family of single chip silicon transistors was designed for reliable operation in the 1GHz region. BRANDING ORDER CODES Precise epitaxial growth, diffusion, phatoengraving and injection malding techniques are employed to 2N4431 sp1171 fabricate each device. The family is intended for 2N4430 SD1170 Class A, B, or amplifier, oscillator, and multiplier 2N4429 $D1176 operations in the UHF region. PIN CONNECTION : 1 0 ll _ , PIN 1 #2 3 4 4 2 (6 7S. | 2Nad31 COC B E B re eN4430 C B E B 2N4429 OC B E: -B ( 5 3 S8a2Ne420-07 3BB2N4429-02 ABSOLUTE MAXIMUM RATINGS (T, = 25C) Symbol| ~=~_Parameter 2N4431 2N4430 2N4429 Unit Vepo Collector to Base Voltage 55.0 55.0 55.0 VW Veeo Collector to Emitter Voltage | 40.0 40.0 35.0 Vv Veno | Emitter to Base Voltage | 3.5 35 3.5 V Ic(max) Continuous Collector Current 2.0 1.0 425 mA Po Total Dissipation at 25C Stud 18.0 10.0 5.0 W @ye Thermal Resistance | o7 175 35.0 [cw {junction to stud) | Ty Junction Temperature | 200 200 200 C | Tsig Storage Temperature - 65 to 150 - 65 lo 150 -f6t0160 | C May 1989 41/6 352N4429 4431 ELECTRICAL CHARACTERISTICS STATIC a . a | 2N4431 | 2N4430 | 2N4429 nit FEES AE IETEE ; est ven mone Min. |Max.| Min. |Max.| Min. |Max. n lcex | Collector Cutoff Current Vee = 55V 4.0 2.0 | 1.0 mA Vee = 15V BVceo | Collector to Emitter lc = 50mA, la =0 40.0 40.0 Vv Breakdown Voltage lc = 20mA, Ig =0 35.0 Vv BVcer | Collector to Emitter R = 1082, Ip = 50mA 55.0 56.0 Vv Breakdown Voltage RAR =108, Ip =20mMA 55.0 Vv BVego | Emitter to Base Breakdown | |< = 0.50mA 3.5 Vv Voltage le = 0.20mA 35 Vv le = 0.10mA 3.5 Vv hee DC Current Gain Voce =5V, Io =100mA 20 | 200) 20 | 200 Vee = $V, le =50mA _ _ 20 | 200 DYNAMIC sais is ae 2N4431 | 2N4430 | 2N4429 sk ymboa arameter es onditions Min. |Max.| Min. Max. Min. |Max. nit fy Gain Bandwidth @ 200mHz| Vee = 20V, lq =100mMA 600 600 MHz Vee = 20V, Ic =50mA 700 MHz Cop | Output Capacitance Vee = 28V, fo = 1.0MHz 10 5.0 3.5 pF hee | OG Current Gain Voe =5.0V, Iq =2.0A 5 Vee =5.0V, Ile = 1.0A 5 Vee = .0, lc =400mA 5 Pour | Power Qutput fo = 1000MHz, Pi, =1.57W | 5.0 Ww Voce = 26V fo =1000MHz, P;,, = 750mW 2.5 Ww n = Collector - Efficiency > 935 To = 1000MHz, P\, = 300mW 1.0 Ww fg =500MHz, Pip = 75mW mW 2/6 362N4429 4431 TEST CIRCUIT onaa3t Naa 30 /2NAa29 4 * ia ) OUTPUT CTT ST | son B-10pF 25TUB INPUT TUNER 5 2STUB TUNER 064 H 100 pfu | = L1=% TURN NO, 20 WIRE 4" DIA, = 4#78VC1-C2 JOHANSON JMC 2954 Sa82N4e31-01 2Nde30 2nide29 a6 372N4429 4431 . ] POWER OUT vs. FREQUENCY (2N4431) POWER OUT vs. FREQUENCY (2N4430) Vog = 28 (Class Ci Vog= 28 [Class Ch 'o POWER OUT WATTS PU a = oO 300 500 70d 300 1100 1300 o 300 500 Oo 300 1700 1300 FREQUENCY MHz FREQUENCY MHz SHUEN44 3" -02 S882n44a0-02 POWER OUT vs. FREQUENCY (2N4429) 2.0 PB a Vop S28 (Class C} Ske i : i a < in 4 2 q Gy Lento rT 3 See = fi _ P| a 5 Moog 800 700 900 1100 1300 FREQUENCY Mile $882Na429.02 4/6 382N4429 4431 PACKAGE MECHANICAL DATA TO-1174 == ey as? * io U B po [ + } tT l 1 ae yy F eT 32 UNC- 7A | G S8B2N4429-07 Minimum Maximum Inch/mm Inch/mm A _910/23.11 B .024/0.61 .034/0.86 c .270/6.86 .290/7.37 D .008/0.08 .007/0.18 E .110/2.79 A 40/3.30 F 115/2.92 145/3,68 G .055/1.40 .065/1.65 H -435/11.05 465/11.81 | A75/4.45 -210/5.93 5/6 392N4429 4431 PACKAGE MECHANICAL DATA MT66 | A ~ | | eA 4 F : - ws | + (| ; ad bees ja ~| PS emcees fe o =| ag 4 te | q b | ] = ] = B-17 Wwe 24 1 \ * Ec | 7S es 3882N4429-08 Minimum Maximum Minimum Maximum Inches Inches Inches Inches A 865 900 G 270 290 B 285 295 H 240 .260 Cc 25 035 | 435 * 465 D 180 .200 J 1055 065 E 110 130 K A15 135 F 008 012 L 1.350 6/6 40