2N6255
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
The 2N6255 is a silicon NPN transistor, designed for 12.5 volt VHF equipment. Applications include amplifier, pre-driver,
driver, and output stages. It is also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
VCEO Collector-Emitter 18 Vdc
VCBO Collector-Base Voltage 36 Vdc
VEBO Emitter-Base Voltage 4.0 Vdc
IC Collector Current 1 A
Thermal Data
PD Total Device Dissipation @ TA = 25ºC
Derate above 25ºC 5.0
28.5 Watts
mW/ ºC
1. Emitter
2. Base
3. Collector
TO-39
Features
• Silicon NPN, To-39 packaged VHF Transistor
• 3.0 Watt Power Output @ 175 MHz
• Power Gain, GPE = 7.8 dB
• Efficiency = 50%
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
2N6255
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off) Value
Symbol Test Conditions Min. Typ. Max. Unit
BVCES Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, VBE =0Vdc)
36
-
-
Vdc
BVCEO Collector-Emitter Breakdown Voltage
(IC=10 mAdc, IB=0)
18
-
-
Vdc
BVEBO Emitter-Base Breakdown Voltage
(IE = 1.0 mAdc, IC = 0)
4.0
-
Vdc
ICES Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0 Vdc)
-
-
5.0
mA
ICBO Emitter Cutoff Current
(VCB = 15 Vdc, IE = 0)
-
-
.25
mA
(on)
HFE DC Current Gain
(IC = 250 mAdc, VCE = 5.0 Vdc)
5.0
-
-
-
DYNAMIC
Symbol Test Conditions Value
COB Output Capacitance
(VCB = 12.5Vdc, f = 1.0 MHz
-
15
20
pF
FUNCTIONAL Value
Symbol Test Conditions Min. Typ. Max. Unit
GPE Power Gain Test Circuit-Figure 1
Pout = 3.0 W, VCC = 12.5Vdc
f = 175 MHz
7.8
-
-
dB
ηC Collector Efficiency Test Circuit-Figure 1
Pout = 3.0 W, VCC = 12.5Vdc
f = 175 MHz
50
-
-
%
2N6255
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
POUT
(RL=50 OHMS)
PIN
(RS=50 OHMS)
L1
L2
C1
C2
C3
C4
C5
C6 12.5 Vdc
Bead
RFC1
RFC2
Figure 1 - 175 MHz RF AMPLIFIER CIRCUIT FOR GPE,
AND EFFICIENCY SPECIFICATIONS.
C1,3: 2.0-50 pF ARCO 461 ELEMENCO C2,4: 5.0-80 pF ARCO 462 ELEMENCO
C5: 1000 pF FEED THRU C6: 5.0 uF
L1: 1 TURN #18 AWG ¼” I.D. L2: 2 1/2 TURNS #18 AWG ¼” I.D
RFC2: 0.15 uH MOLDED CHOKE BEAD: FERROXCUBE 56-570-65/3B
RFC1: 0.15 uH MOLDED CHOKE WITH BEAD ON GROUND LEG
2N6255
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
