MML09211HT1
1
RF Device Data
Freescale Semiconductor, Inc.
Enhancement Mode pHEMT
Technology (E--pHEMT)
Low Noise Amplifier
The MML09211H is a single--stage low noise amplifier (LNA) with active
bias and high isolation for use in cellular infrastructure applications. It is
designed for a range of low noise, high linearity applications such as pico cell,
femto cell, tower mounted amplifiers (TMA) and receiver front end circuits. It
operates from a single voltage supply and is suitable for applications with
frequencies from 400 to 1400 MHz such as ISM, GSM, W--CDMA and LTE.
Features
Ultra Low Noise Figure: 0.52 dB @ 900 MHz
Frequency: 400--1400 MHz
Unconditionally Stable over Temperature
High Reverse Isolation: --35 dB @ 900 MHz
P1dB: 22 dBm @ 900 MHz
Small--Signal Gain: 21.3 dB @ 900 MHz (adjustable externally)
Third Order Output Intercept Point: 32.6 dBm @ 900 MHz
Single 5 V Supply
Supply Current: 60 mA
50 Ohm Operation (some external matching required)
Cost--effective 8--pin, 2 mm DFN Surface Mount Plastic Package
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.
400--1400 MHz, 21.3 dB
22 dBm
E--pHEMT LNA
MML09211HT1
DFN 2 2
Table 1. Typical Performance (1)
Characteristic Symbol
400
MHz
900
MHz
1400
MHz Unit
Noise Figure (2) NF 0.54 0.52 0.66 dB
Input Return Loss
(S11)
IRL -- 1 9 -- 2 3 -- 1 7 dB
Output Return Loss
(S22)
ORL -- 1 6 -- 1 6 -- 2 0 dB
Small--Signal Gain
(S21)
Gp26.1 21.3 18.8 dB
Power Output @
1dB Compression
P1dB 22 22 20 dBm
Third Order Input
Intercept Point
IIP3 11 11.3 13.5 dBm
Third Order Output
Intercept Point
OIP3 31.5 32.6 32.3 dBm
1. VDD =5Vdc,T
A=25C, 50 ohm system, application circuit
tuned for specified frequency.
2. Noise figure value calculated with connector losses removed.
Table 2. Maximum Ratings
Rating Symbol Value Unit
Supply Voltage VDD 6 V
Supply Current IDD 150 mA
RF Input Power Pin 20 dBm
Storage Temperature Range Tstg --65 to +150 C
Junction Temperature TJ175 C
Table 3. Thermal Characteristics
Characteristic Symbol Value (3) Unit
Thermal Resistance, Junction to Case
Case Temperature 86C, 5 Vdc, 60 mA, no RF applied
RJC 37.5 C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Freescale Semiconductor
Technical Data
Document Number: MML09211H
Rev. 1, 9/2014
Freescale Semiconductor, Inc., 2011, 2014.
ll rights reserved.