BTS50055-1TMA - Infineon Technologies

Data Sheet BTS50055-1TMA

Infineon Technologies AG Page 1of 18 2010-April-27

Smart Highside High Current Power Switch Reversave

Features

• Overload protection

• Current limitation

• Short circuit protection

• Over temperature protection

• Over voltage protection (including load dump)

• Clamp of negative voltage at output

• Fast deenergizing of inductive loads 1)

• Low ohmic inverse current operation

• Reversave (Reverse battery protection)

• Diagnostic feedback with load current sense

• Open load detection via current sense

• Loss of Vbb protection 2)

• Electrostatic discharge (ESD) protection

• Green product (RoHS compliant)

• AEC qualified

Application

• Power switch with current sense diagnostic

feedback for 12 V DC grounded loads

• Most suitable for loads with high inrush current

like lamps and motors; all types of resistive and

inductive loads

• Replaces electromechanical relays, fuses and discrete circuits

General Description

N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load

current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.

Charge pump

Level shifter

Rectifier

Limit for

unclamped

ind. loads

Gate

protection

Current

limit

Overvoltage

protection

+ Vbb

PROFET

OUT

4 & Tab

1,2,6,7

Load GND

Load

Output

Voltage

detection

RIS

IIS

VIS

IIN

Logic GND

Voltage

sensor

Voltage

source

Current

Sense

Logic

ESD

Temperature

sensor

Rbb

VIN

1) With additional external diode.

2) Additional external diode required for energized inductive loads (see page 9).

Product Summary

Overvoltage protection Vbb(AZ) 62 V

Output clamp VON(CL) 42 V

Operating voltage Vbb(on) 5.0 ... 34 V

On-state resistance RON 6.0 mΩ

Load current (ISO) IL(ISO) 70 A

Short circuit current limitation IL(SC) 130 A

Current sense ratio I

L : IIS 14 000

PG-TO220-7-4

SMD

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Data Sheet BTS50055-1TMA

Infineon Technologies AG Page 2 2010-April-27

Pin Symbol Function

1 OUT O

Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with

each other especially in high current applications. 3)

2 OUT O Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with

each other especially in high current applications. 3)

3 IN I Input; has an internal pull up; activates the power switch in case of short to

ground

4 Vbb + Supply voltage; positive power supply voltage; tab and pin 4 are internally

shorted; in high current applications use the tab 4).

5 IS S

Sense Output; Diagnostic feedback; provides a sense current proportional

to the load current; zero current on failure (see Truth Table on page 7)

6 OUT O

Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with

each other especially in high current applications. 3)

7 OUT O

Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with

each other especially in high current applications. 3)

Maximum Ratings at Tj = 25 °C unless otherwise specified

Parameter Symbol Values Unit

Supply voltage (over voltage protection see page 4) Vbb 42 V

Supply voltage for short circuit protection,

Tj,start =-40 ...+150°C: (see diagram on page 10)

Vbb 34 V

Load current (short circuit current, see page 5) IL self-limited A

Load dump protection VLoadDump = VA + Vs, VA = 13.5 V

RI5) = 2 Ω, RL = 0.54 Ω, td = 200 ms,

IN, IS = open or grounded

VLoad dump

6) 75 V

Operating temperature range

Storage temperature range

Tstg

-40 ...+150

-55 ...+150

°C

Power dissipation (DC), TC ≤ 25 °C Ptot 170 W

Inductive load switch-off energy dissipation, single pulse

Vbb = 12V, T

j,start = 150°C, T

C = 150°C const.,

IL = 20 A, ZL = 7.5 mH, 0 Ω, see diagrams on page 10

EAS 1.5 J

Electrostatic discharge capability (ESD)

Human Body Model acc. MIL-STD883D, method 3015.7 and ESD

assn. std. S5.1-1993, C = 100 pF, R = 1.5 kΩ

VESD 4kV

Current through input pin (DC)

Current through current sense status pin (DC)

see internal circuit diagrams on page 8 and 9

IIN

IIS

+15 , -250

3) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability

and decrease the current sense accuracy

4) Otherwise add up to 0.7 mΩ (depending on used length of the pin) to the RON if the pin is used instead of the

tab.

5) RI = internal resistance of the load dump test pulse generator.

6) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.

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Data Sheet BTS50055-1TMA

Infineon Technologies AG Page 3 2010-April-27

Thermal Characteristics

Parameter and Conditions Symbol Values Unit

min typ max

Thermal resistance chip - case: RthJC 7) -- -- 0.75 K/W

junction - ambient (free air): RthJA -- 60 --

SMD version, device on PCB 8): -- 33 40

Electrical Characteristics

Parameter and Conditions Symbol Values Unit

at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified min typ max

Load Switching Capabilities and Characteristics

On-state resistance (Tab to pins 1,2,6,7, see

measurement circuit page 7) IL = 20 A, T

j = 25 °C:

VIN = 0, IL = 20 A, T

j = 150 °C:

RON

4.4

7.9

6.0

10.5

mΩ

IL = 90 A, T

j = 150 °C: -- 10.7

Vbb = 6V 9), IL = 20 A, T

j = 150 °C: RON(Static) -- 10 17

Nominal load current 10) (Tab to pins 1, 2, 6, 7)

ISO 10483-1/6.7: VON = 0.5 V, T

c = 85 °C 11)

IL(ISO) 55 70 -- A

Nominal load current 10), device on PCB 8)

TA = 85 °C, Tj ≤ 150 °C VON ≤ 0.5 V,

IL(NOM)

13.6

17 -- A

Maximum load current in resistive range

(Tab to pins 1, 2, 6, 7) VON = 1.8 V, T

c = 25 °C:

see diagram on page 13 VON = 1.8 V, T

c = 150 °C:

IL(Max)

250

150

-- A

Turn-on time12) IIN to 90% VOUT:

Turn-off time IIN to 10% VOUT:

RL = 1 Ω , Tj =-40...+150°C

ton

toff

400

110

µs

Slew rate on 12) (10 to 30% VOUT )

RL = 1 Ω , TJ = 25 °C

dV/dton -- 0.7 -- V/µs

Slew rate off 12) (70 to 40% VOUT )

RL = 1 Ω , TJ = 25 °C

-dV/dtoff -- 1.1 -- V/µs

7) Thermal resistance RthCH case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included!

8) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb

connection. PCB is vertical without blown air.

9) Decrease of Vbb below 10 V causes slowly a dynamic increase of RON to a higher value of RON(Static). As

long as VbIN > VbIN(u) max, RON increase is less than 10 % per second for TJ < 85 °C.

10) not subject to production test, specified by design

11) TJ is about 105°C under these conditions.

12) See timing diagram on page 14.

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Data Sheet BTS50055-1TMA

Infineon Technologies AG Page 4 2010-April-27

Parameter and Conditions Symbol Values Unit

at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified min typ max

Inverse Load Current Operation

On-state resistance (Pins 1, 2, 6, 7 to pin 4)

VbIN = 12 V, IL = - 20 A T

j = 25 °C:

see diagram on page 10 T

j = 150 °C:

RON(inv)

4.4

7.9

6.0

10.5

mΩ

Nominal inverse load current (Pins 1, 2, 6, 7 to Tab)

VON = -0.5 V, T

c = 85 °C11

IL(inv) 55 70 -- A

Drain-source diode voltage (Vout > Vbb)

IL = - 20 A, IIN = 0, Tj = +150°C

-VON -- 0.6 -- V

Operating Parameters

Operating voltage (VIN = 0V) 13) Vbb(on) 5.0 -- 34 V

Under voltage shutdown 14) VbIN(u) 1.5 3.0 4.5 V

Under voltage start of charge pump

see diagram page 15

VbIN(ucp)

3.0

4.5 6.0 V

Over voltage protection 15) Tj =-40°C:

Ibb = 15 mA Tj = 25...+150°C:

VZ,IN 60

Standby current Tj =-40...+25°C:

IIN = 0 T

j = 150°C:

Ibb(off) --

µA

13) If the device is turned on before a Vbb-decrease, the operating voltage range is extended down to VbIN(u).

For all voltages 0 ... 34 V the device provides embedded protection functions against overtemperature and

short circuit.

14) VbIN = Vbb - VIN see diagram on page 7. When VbIN increases from less than VbIN(u) up to VbIN(ucp) = 5 V

(typ.) the charge pump is not active and VOUT ≈Vbb - 3 V.

15) See also VON(CL) in circuit diagram on page 9.

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Data Sheet BTS50055-1TMA

Infineon Technologies AG Page 5 2010-April-27

Parameter and Conditions Symbol Values Unit

at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified min typ max

Protection Functions 16)

Short circuit current limit (Tab to pins 1, 2, 6, 7)

VON = 12 V, time until shutdown max. 350 µs Tc =-40°C:

Tc =25°C:

Tc =+150°C:

IL(SC)

110

130

115

180

Short circuit shutdown delay after input current

positive slope, VON > VON(SC)

min. value valid only if input "off-signal" time exceeds 30 µs

td(SC)

-- 350 µs

Output clamp 17) IL= 40 mA:

(inductive load switch off)

see diagram Ind. and overvolt. output clamp page 8

-VOUT(CL) 14

16.5

20 V

Output clamp (inductive load switch off)

at VOUT = Vbb - VON(CL) (e.g. over voltage)

IL= 40 mA

VON(CL)

42 47 V

Short circuit shutdown detection voltage

(pin 4 to pins 1,2,6,7)

VON(SC)

6 -- V

Thermal overload trip temperature Tjt 150 -- -- °C

Thermal hysteresis

∆

Tjt -- 10 -- K

Reverse Battery

Reverse battery voltage 18) -Vbb -- -- 16 V

On-state resistance (Pins 1 ,2 ,6 ,7 to pin 4) T

j = 25 °C:

Vbb = -12V, VIN = 0, IL = - 20 A, RIS = 1 kΩ T

j = 150 °C:

RON(rev) -- 5.4

8.9

7.0

12.3 mΩ

Integrated resistor in Vbb line Rbb -- 120 -- Ω

16) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not

designed for continuous repetitive operation.

17) This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode

is used, VOUT is clamped to Vbb- VON(CL) at inductive load switch off.

18) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as

it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power transistor

is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic

drain-source diode. The temperature protection is not active during reverse current operation! Increasing

reverse battery voltage capability is simply possible as described on page 9.

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Data Sheet BTS50055-1TMA

Infineon Technologies AG Page 6 2010-April-27

Parameter and Conditions Symbol Values Unit

at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified min typ max

Diagnostic Characteristics

Current sense ratio, IL = 90 A,Tj =-40°C:

static on-condition, Tj =25°C:

kILIS = IL : IIS, Tj =150°C:

VON < 1.5 V 19), IL = 20 A,Tj =-40°C:

VIS <VOUT - 5V, Tj =25°C:

VbIN > 4.0 V Tj =150°C:

see diagram on page 12 IL = 10 A,Tj =-40°C:

Tj =25°C:

Tj =150°C:

IL = 4 A,Tj =-40°C:

Tj =25°C:

Tj =150°C:

kILIS 12 500

12 500

11 500

12 500

12 000

11 500

12 500

11 500

11 000

11 200

14 200

13 700

13 000

14 500

14 000

13 400

15 000

14 300

13 500

18 000

15 400

14 000

16 000

14 500

17 500

16 500

15 000

19 000

17 500

15 500

28 500

22 000

19 000

IIS=0 by IIN =0 (e.g. during deenergizing of inductive loads):

Sense current saturation IIS,lim 6.5 -- -- mA

Current sense leakage current IIN = 0:

IN = 0, IL ≤ 0:

IIS(LL)

IIS(LH)

0.5

µA

Current sense over voltage protection Tj =-40°C:

Ibb = 15 mA Tj = 25...+150°C:

VZ,IS 60

Current sense settling time 20) ts(IS) -- -- 500 µs

Input

Input and operating current (see diagram page 13)

IN grounded (VIN = 0)

IIN(on) -- 0.8 1.5 mA

Input current for turn-off 21) IIN(off) -- -- 80 µA

19) If VON is higher, the sense current is no longer proportional to the load current due to sense current

saturation, see IIS,lim .

20) not subject to production test, specified by design

21) We recommend the resistance between IN and GND to be less than 0.5 kΩ for turn-on and more than

500kΩ for turn-off. Consider that when the device is switched off (IIN = 0) the voltage between IN and GND

reaches almost Vbb.

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Data Sheet BTS50055-1TMA

Infineon Technologies AG Page 7 2010-April-27

Truth Table

Input

current

Output Current

Sense

Remark

level level IIS

Normal

operation

nominal

=IL / kilis, up to IIS=IIS,lim

Very high

load current H H IIS, lim up to VON=VON(Fold back)

IIS no longer proportional to IL

Current-

limitation H H 0 VON > VON(Fold back)

if VON>VON(SC), shutdown will occur

Short circuit to

GND

Over

temperature

Short circuit to

Vbb

<nominal 22)

Open load L

Z23)

Negative output

voltage clamp

L L 0

Inverse load

current

L = "Low" Level; H = "High" Level

Over temperature reset by cooling: Tj < Tjt (see diagram on page 15)

Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 14)

22) Low ohmic short to Vbb may reduce the output current IL and can thus be detected via the sense current IIS.

23) Power Transistor "OFF", potential defined by external impedance.

Terms

PROFET

OUT

VIN IIS

IIN

Vbb

Ibb

VOUT

VON

1,2,6,7

RIS

VIS

VbIN

RIN

VbIS

Two or more devices can easily be connected in

parallel to increase load current capability.

RON measurement layout

Sense

V force

Out Force

contacts contacts

(both out

pins parallel)

l ≤

5.5mm

Typical RON for SMD version is about 0.2 mΩ less

than straight leads due to l ≈ 2 mm

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Data Sheet BTS50055-1TMA

Infineon Technologies AG Page 8 2010-April-27

Input circuit (ESD protection)

Vbb

Rbb

VZ,IN

VbIN

VIN

When the device is switched off (IIN = 0) the voltage

between IN and GND reaches almost Vbb. Use a

mechanical switch, a bipolar or MOS transistor with

appropriate breakdown voltage as driver.

VZ,IN = 66 V (typ).

Short circuit detection

Fault Condition: VON > VON(SC) (6 V typ.) and t> td(SC)

(80 ...350 µs).

Short circuit

detection

Logic

unit

+ Vbb

OUT

VON

Current sense status output

Z,IS

VZ,IS = 66 V (typ.), RIS = 1 kΩ nominal (or 1 kΩ /n, if n

devices are connected in parallel). IS = IL/kilis can be

driven only by the internal circuit as long as Vout - VIS >

5 V. If you want measure load currents up to IL(M), RIS

should be less than Vbb - 5 V

IL(M) / Kilis.

Note: For large values of RIS the voltage VIS can reach

almost Vbb. See also over voltage protection.

If you don't use the current sense output in your

application, you can leave it open.

Inductive and over voltage output clamp

+ Vbb

OUT

PROFET

VZ1

VON

IS VOUT

VZG

VON is clamped to VON(Cl) = 42 V typ. At inductive load

switch-off without DS, VOUT is clamped to VOUT(CL) =

-19 V typ. via VZG. With DS, VOUT is clamped to Vbb -

VON(CL) via VZ1. Using DS gives faster deenergizing of

the inductive load, but higher peak power dissipation in

the PROFET. In case of a floating ground with a

potential higher than 19V referring to the OUT –

potential the device will switch on, if diode DS is not

used.

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Data Sheet BTS50055-1TMA

Infineon Technologies AG Page 9 2010-April-27

Over voltage protection of logic part

+ Vbb

VOUT

Signal GND

Logic

PROFET

VZ,IS

RIS

VZ,IN

RVVZ,VIS

Rbb = 120 Ω typ., VZ,IN = VZ,IS = 66 V typ., RIS = 1 kΩ

nominal. Note that when over voltage exceeds 71 V typ.

a voltage above 5V can occur between IS and GND, if

RV, VZ,VIS are not used.

Reverse battery protection

Logic

OUT

Power GND

Signal GND

Vbb

Power

Transistor

RV ≥ 1 kΩ, RIS = 1 kΩ nominal. Add RIN for reverse

battery protection in applications with Vbb above

16 V18); recommended value:

RIN + 1

RIS + 1

RV = 0.1A

|Vbb| - 12V if DS is not used (or

RIN = 0.1A

|Vbb| - 12V if DS is used).

To minimize power dissipation at reverse battery

operation, the summarized current into the IN and IS

pin should be about 120mA. The current can be

provided by using a small signal diode D in parallel to

the input switch, by using a MOSFET input switch or by

proper adjusting the current through RIS and RV.

Vbb disconnect with energized inductive

load

Provide a current path with load current capability by

using a diode, a Z-diode, or a varistor. (VZL < 72 V or

VZb < 30 V if RIN=0). For higher clamp voltages

currents at IN and IS have to be limited to 250 mA.

Version a:

PROFET

IN OUT

Vbb

VZL

Version b:

PROFET

IN OUT

Vbb

VZb

Note that there is no reverse battery protection when

using a diode without additional Z-diode VZL, VZb.

Version c: Sometimes a necessary voltage clamp is

given by non inductive loads RL connected to the same

switch and eliminates the need of clamping circuit:

PROFET

IN OUT

Vbb RL

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Data Sheet BTS50055-1TMA

Infineon Technologies AG Page 10 2010-April-27

Inverse load current operation

PROFET

IN OUT

Vbb

VOUT

- IL

RIS

VIS

VIN

IIS

The device is specified for inverse load current

operation (VOUT > Vbb > 0V). The current sense feature

is not available during this kind of operation (IIS = 0).

With IIN = 0 (e.g. input open) only the intrinsic drain

source diode is conducting resulting in considerably

increased power dissipation. If the device is switched

on (VIN = 0), this power dissipation is decreased to the

much lower value RON(INV) * I2 (specifications see page

4).

Note: Temperature protection during inverse load

current operation is not possible!

Inductive load switch-off energy

dissipation

PROFET

IN OUT

EAS

ELoad

{

i (t)

Energy stored in load inductance:

EL = 1/2·L·I2

While demagnetizing load inductance, the energy

dissipated in PROFET is

EAS= Ebb + EL - ER= ∫ VON(CL)·iL(t) dt,

with an approximate solution for RL > 0 Ω:

EAS= IL· L

2·RL

(Vbb + |VOUT(CL)|) ln (1+ IL·RL

|VOUT(CL)| )

Maximum allowable load inductance for

a single switch off

L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω

L [µH]

L [A]

Externally adjustable current limit

If the device is conducting, the sense current can be

used to reduce the short circuit current and allow

higher lead inductance (see diagram above). The

device will be turned off, if the threshold voltage of T2

is reached by IS*RIS . After a delay time defined by

RV*CV T1 will be reset. The device is turned on again,

the short circuit current is defined by IL(SC) and the

device is shut down after td(SC) with latch function.

PROFET

Powe

GND

Signal

GND

Vbb

OUT

load

T1 T2

Signal

Vbb

100

1000

10000

100000

1000000

1 A 10 A 100 A 1000 A

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Data Sheet BTS50055-1TMA

Infineon Technologies AG Page 11 2010-April-27

Options Overview

Type

BTS50055-1TMA

Over temperature protection with hysteresis X

Tj >150 °C, latch function24)

Tj >150 °C, with auto-restart on cooling

Short circuit to GND protection

with over temperature shutdown

switches off when VON>6 V typ.

(when first turned on after approx. 180 µs)

Over voltage shutdown -

Output negative voltage transient limit

to Vbb - VON(CL) X

to VOUT = -19 V typ X25)

24) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠

0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 5). No latch

between turn on and td(SC).

25) Can be "switched off" by using a diode DS (see page 8) or leaving open the current sense output.

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Data Sheet BTS50055-1TMA

Infineon Technologies AG Page 12 2010-April-27

Characteristics

Current sense versus load current:

IIS = f(IL), TJ= -40 ... +150 °C

IIS [mA]

L [A]

Current sense ratio:

KILIS = f(IL),TJ = -40°C

kilis

L [A]

Current sense ratio:

IIS = f(IL), TJ= 25 °C

kILIS

L [A]

Current sense ratio:

KILIS = f(IL),TJ = 150°C

kilis

L [A]

10000

12000

14000

16000

18000

20000

22000

0 20406080

max

typ

min

10000

12000

14000

16000

18000

20000

22000

0 20406080

max

typ

min

0 20406080

max

min

10000

12000

14000

16000

18000

20000

22000

24000

26000

28000

30000

0 20406080

max

typ

min

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Data Sheet BTS50055-1TMA

Infineon Technologies AG Page 13 2010-April-27

Typ. current limitation characteristic

IL = f (VON, Tj )

IL [A]

ON [V]

In case of VON > VON(SC) (typ. 6 V) the device will be

switched off by internal short circuit detection.

Typ. on-state resistance

RON = f (Vbb, Tj ); IL = 20 A; VIN = 0

RON [mOhm]

0 5 10 15

static

dynamic

= 150°C

85°C

25°C

-40°C

Vbb [V]

Typ. input current

IIN = f (VbIN), VbIN = Vbb - VIN

IIN [mA]

VbIN [V]

100

150

200

250

300

350

400

450

0 5 10 15 20

VON > VON(SC) only for t < td(SC)

(otherwise immediate shutdown)

TJ = 25°C

TJ = - 40°C TJ = 150°C

VON(FB)

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0 20406080

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Data Sheet BTS50055-1TMA

Infineon Technologies AG Page 14 2010-April-27

Timing diagrams

Figure 1a: Switching a resistive load,

change of load current in on-condition:

IIN

VOUT

IIS tson(IS)

slc(IS)

Load 1 Load 2

soff(IS)

off

slc(IS)

90%

dV/dton

dV/dtoff

10%

The sense signal is not valid during a settling time

after turn-on/off and after change of load current.

Figure 2b: Switching motors and lamps:

IIN

VOUT

IIL

IIS

Sense current saturation can occur at very high

inrush currents (see IIS,lim on page 6).

Figure 2c: Switching an inductive load:

IIN

VOUT

IIS

Figure 3d: Short circuit:

shut down by short circuit detection, reset by IIN = 0.

IIN

IL(SCp)

IIS

td(SC)

VOUT=0

VOUT>>0

Shut down remains latched until next reset via input.

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Data Sheet BTS50055-1TMA

Infineon Technologies AG Page 15 2010-April-27

Figure 4e: Over temperature

Reset if Tj<Tjt

IIN

IIS

VOUT

Auto Restart

Figure 6f: Under voltage restart of charge pump,

over voltage clamp

VOUT

VbIN(ucp)

VIN = 0

IIN = 0

VON(CL)

VbIN(u)

bIN(u)

dynamic, short

Undervoltage

not below

VON(CL)

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Data Sheet BTS50055-1TMA

Infineon Technologies AG Page 16 2010-April-27

Package and Ordering Code

All dimensions in mm

SMD: PG-TO220-7-4

Sales Code BTS50055-1TMA

BA0.25 M

0.1

Typical

±0.2

8.5 1)

7.551)

(13.85)

±0.2

9.25 ±0.3

0...0.15

7 x 0.6 ±0.1

±0.1

1.27

4.4

0.5

±0.1

±0.3

2.1

3.6 ±0.3

0.05

0.1

Metal surface min. X = 7.25, Y = 6.9

2.4

1.27

All metal surfaces tin plated, except area of cut.

0...0.3

6 x

8˚MAX.

Footprint:

9.4

0.47

0.8

8.42

4.6

16.15

10.8

Green Product (RoHS compliant)

To meet the world-wide customer requirements for environmentally friendly products and to be compliant with

government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-

free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).

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Data Sheet BTS50055-1TMA

Infineon Technologies AG Page 17 2010-April-27

Revision History

Version Date Changes

Rev. 1.1 2010-04-27 Limits of parameter ton changed to min 80µs / max 400µs

Rev. 1.0 2008-01-24 Initial version of data sheet.

Green (RoHS compliant) variant of BTS650P

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Edition 2010-April-27

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or

characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device, Infineon Technologies

hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-

infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in

question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the

failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life

support devices or systems are intended to be implanted in the human body, or to support and/or maintain and

sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other

persons may be endangered.

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