SD303C..C SERIES
FAST RECOVERY DIODES Hockey Puk Version
350A
1
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Features
High power FAST recovery diode series
1.0 to 2.0 µs recovery time
High voltage ratings up to 2500V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Press-puk encapsulation
Case style conform to JEDEC DO-200AA
Maximum junction temperature 125°C
Typical Applications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
Major Ratings and Characteristics
IF(AV) 350 A
@ Ths 55 °C
IF(RMS) 550 A
@ Ths 25 °C
IFSM @ 50Hz 5770 A
@ 60Hz 6040 A
I2t@
50Hz 166 KA2s
@ 60Hz 152 KA2s
VRRM range 400 to 2500 V
trr range 1.0 to 2.0 µs
@ TJ25 °C
TJ- 40 to 125 °C
Parameters SD303C..C Units
case style DO-200AA
SD303C..C Series
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Bulletin I2066 rev. C 04/00
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Code
(µs) (A) (A/µs) (V) (µs) (µC) (A)
Test conditions Max. values @ TJ
= 125
°C
Recovery Characteristics
typical trr Ipk di/dt Vrtrr Qrr Irr
@ 25% IRRM Square Pulse @ 25% IRRM
TJ = 25 oC
S10 1.0 2.4 52 33
S15 1.5 750 25 -30 2.9 90 44
S20 2.0 3.2 107 46
Voltage VRRM max. repetitive VRSM , maximum non- IRRM max.
Type number Code peak and off-state voltage repetitive peak voltage TJ = 125°C
VVmA
04 400 500
SD303C..S10C 08 800 900
10 1000 1100
12 1200 1300
SD303C..S15C 14 1400 1500
16 1600 1700
20 2000 2100
25 2500 2600
ELECTRICAL SPECIFICATIONS
Voltage Ratings
SD303C..S20C
Parameter SD303C..C Units Conditions
IF(AV) Max. average forward current 350(175) A 180° conduction, half sine wave.
@ Heatsink temperature 55(75) °C Double side (single side) cooled
IF(RMS) Max. RMS current 550 A @ 25°C heatsink temperature double side cooled
IFSM Max. peak, one-cycle 5770 t = 10ms No voltage
non-repetitive forward current 6040 t = 8.3ms reapplied
4850 t = 10ms 100% VRRM
5080 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 166 t = 10ms No voltage Initial TJ = TJ max.
152 t = 8.3ms reapplied
117 t = 10ms 100% VRRM
107 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 1660 KA2√s t = 0.1 to 10ms, no voltage reapplied
VF(TO)1 Low level of threshold voltage 1.14 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
VF(TO)2High level of threshold voltage 1.63 (I > π x IF(AV)), TJ = TJ max.
rf1 Low level of forward slope resistance 1.14 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
rf2 High level of forward slope resistance 0.77 (I > π x IF(AV)), TJ = TJ max.
VFM Max. forward voltage 2.26 V Ipk= 1100A, TJ = 25°C, tp = 10ms sinusoidal wave
Forward Conduction
KA2s
A
mΩ
V
35
SD303C..C Series
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TJMax. operating temperature range -40 to 125
Tstg Max. storage temperature range -40 to 150
RthJ-hs Max. thermal resistance, 0.16 DC operation single side cooled
junction to heatsink 0.08 DC operation double side cooled
F Mounting force, ± 10% 4900 N
(500) (Kg)
wt Approximate weight 70 g
Case style DO-200AA See Outline Table
Parameter SD303C..C Units Conditions
Thermal and Mechanical Specifications
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
°C
K/W
1- Diode
2- Essential part number
3-3 = Fast recovery
4-C = Ceramic Puk
5- Voltage code: Code x 100 = VRRM (see Voltage Ratings table)
6-t
rr code (see Recovery Characteristics table)
7- C = Puk Case DO-200AA
Ordering Information Table
51 2 3 4
SD 30 3 C 25 S20 C
7
6
Device Code
Sinusoidal conduction Rectangular conduction
Conduction angle Units Conditions
Single Side Double Side Single Side Double Side
180°0.010 0.011 0.008 0.008
120°0.012 0.013 0.013 0.013
90°0.016 0.016 0.018 0.018 K/W TJ = TJ max.
60°0.024 0.024 0.025 0.025
30°0.042 0.042 0.042 0.042
SD303C..C Series
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Outline Table
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Case Style DO-200AA
All dimensions in millimeters (inches)
50
60
70
80
90
100
110
120
130
0 50 100 150 200 250 300
30°
60°
90°
180° DC
120°
Average Forward Current (A)
Maxim um Allow able Heatsink Temperature (°C)
SD 303C..C Series
( S in g le S id e C o o le d )
R (D C ) = 0.16 K/W
thJ-hs
Conduction Period
60
70
80
90
100
110
120
130
0 20 40 60 80 100 120 140 160 180
30°
60°90°
120°
180°
Averag e Forw ard Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Angle
SD303C..C Series
(Single Side Cooled)
R (DC) = 0.16 K/W
th J-hs
0.3 (0.01) MIN.
BOTH ENDS
42 (1.65 ) DIA . MA X.
38 (1.50) DIA. MAX.
TWO PLACES
3.5(0.14) ± 0.1(0.004) DIA. NOM.x
1.8 (0.07) DEEP MIN. BOTH ENDS
19(0.75) DIA. MAX.
1 4.4 (0.57)
13.7 (0.54)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
SD303C..C Series
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Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics
Fig. 6 - Forward Power Loss CharacteristicsFig. 5 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600
30°60°
90°
180°DC
120°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Period
SD303C..C Series
(D ouble Side C ooled)
R (DC) = 0.08 K/W
th J- hs
40
50
60
70
80
90
100
110
120
130
0 50 100 150 200 250 300 350 400
30°60°90°120°
180°
Average Forward Current (A)
Maximum Allow able Heatsink Temperature (°C)
Conduction Angle
SD303C..C Series
(Double Side Cooled)
R (DC) = 0.08 K/W
thJ-h s
0
100
200
300
400
500
600
700
800
0 50 100 150 200 250 300 350 400
180°
120°
90°
60°
30°
A verage Fo rw a rd Curre n t (A)
Maxim um Average Forw ard Power Loss (W)
RMS Limit
Conduction Angle
SD 3 03C ..C Se rie s
T = 125°C
J
0
100
200
300
400
500
600
700
800
900
1000
0 100 200 300 400 500 600
DC
180°
120°
90°
60°
30°
Average Forward Current (A)
RMS Lim it
Maximum Average Forward Power Loss (W )
Conduction Period
SD303 C..C Serie s
T = 125°C
J
2000
2500
3000
3500
4000
4500
5000
5500
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave Forward Current (A)
Initial T = 12 5°C
@ 60 Hz 0.0 083 s
@ 50 Hz 0.0 100 s
J
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
SD 303C ..C Series
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
0.01 0.1 1
Pulse Train Duration (s)
Peak Half Sine Wave Forward Current (A)
Initial T = 125 °C
No Voltage Reapplied
Rated V Reapp lied
RRM
J
V e r su s P u lse T ra in D u ra t io n .
M ax im u m N on Re p etitive Su rge C urren t
SD 303 C..C Se ries
SD303C..C Series
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Bulletin I2066 rev. C 04/00
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Fig. 9 - Forward Voltage Drop Characteristics Fig. 10 - Thermal Impedance ZthJ-hs Characteristic
Fig. 11 - Typical Forward Recovery Characteristics
10
100
1000
10000
012345678
Insta ntaneo us Fo rw a rd C urre nt (A )
Instantaneous Forward Voltage (V)
T = 25 °C
T = 125 °C
J
J
SD 303C..C Series
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100
Square W ave Pulse Duratio n (s)
thJ-hs
Tran sient The rm al Im pedance Z (K/W )
Steady State Value
R = 0.1 6 K/W
(Sin gle Side C ooled)
R = 0.0 8 K/W
(Double Side C ooled)
(D C O pe ration )
thJ-hs
thJ-h s
SD 303 C ..C Se rie s
0
20
40
60
80
100
120
0 200 400 600 800 1000 1200 1400 1600 1800 2000
Forward Recovery (V)
Rate Off Fall Of Forward Current di/dt (A/usec)
T = 125°C
T = 25°C
J
J
SD 303C..S20C Series
I
V
FP
Fig. 12 - Recovery Time Characteristics Fig. 13 - Recovery Charge Characteristics Fig. 14 - Recovery Current Characteristics
20
30
40
50
60
70
80
90
100
20 30 40 50 60 70 80 90 100
M a xim u m Rev erse Re cov ery C urren t - Irr (A )
Rate Of Fall Of Forward Current - di/dt (A/µs)
400 A
200 A
I = 75 0 A
Sq u ar e P u ls e
FM
SD 303C..S10C Series
T = 125 °C , V = 30V
r
J
10
20
30
40
50
60
70
80
90
100
110
120
130
140
0 20406080100
M a xim um Re ve rse R ec ove ry C ha rge - Q rr (µ C )
Rate Of Fall Of Forward Current - di/dt (A/µs)
400 A
200 A
I = 750 A
Squ are Pul s e
FM
SD 303C..S10C Series
T = 125 °C, V = 30V
J
r
1.6
1.8
2
2.2
2.4
2.6
2.8
10 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
M a xim um Re ve rse R ec o ve ry Tim e - Trr (µs)
400 A
200 A
I = 750 A
Sq u a r e P u ls e
FM
SD 303C ..S10C Serie s
T = 125 °C, V = 30V
J
r
SD303C..C Series
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Bulletin I2066 rev. C 04/00
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Fig. 16 - Recovery Charge Characteristics
Fig. 15 - Recovery Time Characteristics Fig. 17 - Recovery Current Characteristics
Fig. 18 - Recovery Time Characteristics Fig. 19 - Recovery Charge Characteristics Fig. 20 - Recovery Current Characteristics
10
20
30
40
50
60
70
80
90
100
110
120
130
10 20 30 40 50 60 70 80 90 100
M a xim um Rev erse Re cov ery C urre n t - Irr (A )
Rate Of Fall Of Forward Current - di/dt (A/µs)
400 A
200 A
I = 7 50 A
Sq uare Pu lse
FM
SD 3 03C ..S15 C Se rie s
T = 125 °C, V = 30V
J
r
50
60
70
80
90
100
110
120
130
140
150
160
170
10 20 30 40 50 60 70 80 90 100
M a xim um Reve rse Re co very C ha rge - Qr r (µ C)
Rate Of Fa ll Of Forward Current - di/dt (A/µs)
400 A
200 A
I = 750 A
Sq u a re Puls e
FM
SD 303C ..S15C Series
T = 125 °C, V = 30V
J
r
1.6
2
2.4
2.8
3.2
3.6
10 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
M a xim um R eve rse Re co ve ry Tim e - Trr (µs)
400 A
200 A
I = 75 0 A
Sq ua re Pu lse
FM
SD 303C ..S15C Series
T = 125 °C , V = 30V
r
J
20
30
40
50
60
70
80
90
100
110
120
130
10 20 30 40 50 60 70 80 90 100
M a xim um Reve rse Rec o very C urrent - Irr (A )
Rate Of Fall Of Forward Current - di/dt (A/µs)
400 A
200 A
I = 7 50 A
Sq ua r e P u lse
FM
SD 303C..S20C Series
T = 125 °C , V = 30V
J
r
50
100
150
200
250
300
10 20 30 40 50 60 70 80 90 100
M a xim um Re verse Re co ve ry C ha rge - Q rr (µC )
Rate Of Fall Of Forward Current - di/dt (A/µs)
400 A
200 A
I = 7 50 A
Square Pulse
FM
SD 3 03C ..S2 0C Se rie s
T = 125 °C, V = 30V
J
r
2.4
2.6
2.8
3
3.2
3.4
3.6
10 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
Maximum Reverse Recovery Time - Trr (µs)
400 A
200 A
I = 75 0 A
Sq ua r e P uls e
FM
SD303C..S20C Series
T = 125 °C, V = 30V
J
r
Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E
4
12
0.1
Pulse B asew idth (µs)
Pea k F o rw a rd Curre nt (A )
4
dv/dt = 1000V/µs
Sinusoida l Pulse
20 joules per pulse
10
0.4
0.2
0.04
0.02
0.01
SD303C..S10C Series
T = 125°C, V = 1120V
J
RR M
1E4
tp
E1 1E2 1E3 1E4
12
0.1
Pulse Base w idth (µs)
4
20 jou le s p er pulse
10
0.4
0.2
Tr apezoid al Pul se
dv/dt = 1000V/µs; di/dt=50A/µs
SD303C..S10C Series
T = 125°C, V = 1120V
J
RRM
tp
1E1
nt Characteristics
SD303C..C Series
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E1 1E2 1E3 1E4
1
2
Pulse B asew id th (µs)
4
20 jo ule s p er p u ls e
10
0.4
0.2
Trapezoidal Pulse
dv/dt = 1000V/µs; di/dt=50A/µs
T = 125°C, V = 1760V
J
RRM
SD303C..S15C Series
tp
1E1
1E1
1E2
1E3
1E4
1E1 1E2 1E 3 1E
4
1
2
0.1
Pulse Ba sew idth (µs)
Peak Forward Current (A)
4
dv/dt = 1000V/µs
Sinu soidal P ulse
20 jo u les pe r p u ls e
10
0.4
0.2
0.04
0.02
SD303C..S15C Series
T = 125°C, V = 1760V
J
RRM
1E4
tp
Fig. 22 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 23 - Maximum Total Energy Loss Per Pulse Characteristics
E1 1E2 1E3 1E4
1
2
Pulse B asew idth (µs)
4
20 jo u le s p er p uls e
10
0.4
0.2
Trapezoidal Pulse
dv/dt = 1000V/µs; di/dt=50A/µs
SD303C..S20C Series
T = 125°C, V = 1760V
J
RRM
tp
1E1
1E1
1E2
1E3
1E4
1E11E21E31E
4
1
2
0.1
Pulse Ba sew idth (µs)
Peak Forw ard Current (A)
4
dv/dt = 1000V/µs
Sin uso ida l Pu lse
20 joules per pulse
10
0.4
0.2
0.04
T = 125°C, V = 1760V
J
RR M
SD303C..S20C Series
1E4
tp
