Small Signal Transistor
RoHS Device
Page 1
REV:A
Features
-Power dissipation
O
PCM: 0.15W (@TA=25 C)
-Collector current
ICM: -0.1A
-Collector-base voltage
VCBO: BC856W= -80V
BC857W= -50V
BC858W= -30V
-Operating and storage junction temperature
O
range: TJ, TSTG= -65 to +150 C
Mechanical data
-Case: SOT-323, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
Circuit diagram
BC856AW-G Thru. BC858CW-G (PNP)
O
Maximum Ratings (at Ta=25 C unless otherwise noted)
QW-BTR36
SMD Diodes Specialist
COMCHIP
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Storage Temperature Range
Units
Symbol
Parameter Value
3
1 2
VCBO
VCEO
VEBO
IC
PC
-80
-50
-30
-65
-45
-30
-5
150
V
V
V
A
mW
Dimensions in inches and (millimeter)
SOT-323
1 2
3
0.087 (2.20)
0.079 (2.00)
0.096 (2.45)
0.085 (2.15)
0.016 (0.40)
0.008 (0.20)
0.053(1.350)
0.045(1.150)
0.039 (1.00)
0.035 (0.90)
0.010 (0.26)
0.004 (0.10) max
0.006 (0.15)
0.003 (0.08)
0.055 (1.40)
0.047 (1.20)
0.018 (0.46)
Junction Temperature TJ150 OC
Collector Power Dissipation
BC856W-G
BC858W-G
BC857W-G
BC856W-G
BC858W-G
BC857W-G
-0.1
-1.BASE
-2.EMITTER
-3.COLLECTOR
TSTG -65 to +150 OC
-Ideally suited for automatic insertion
-For Switching and AF Amplifier Applications