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For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
1
HMC1049LP5E
v01.1213
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 0.3 - 20 GHz
Functional Diagram
Features
Noise Figure: 1.8 dB
P1dB Output Power: +14.5 dBm
Psat Output Power: +17.5 dBm
High Gain: 15 dB
Output IP3: +29 dBm
Supply Voltage: Vdd = +7V @ 70 mA
50 Ohm Matched Input/Output
32 Lead 5x5 mm SMT Package: 25mm2
Typical Applications
The HMC1049LP5E is ideal for:
• Test Instrumentation
• High Linearity Microwave Radios
• VSAT & SATCOM
• Military & Space
General Description
Electrical Specications, TA = +25° C, Vdd = +7V, Idd = 70 mA [1]
Parameter Min. Typ. Max. Min. Ty p. Max. Min. Typ. Max. Units
Frequency Range 0.3 - 1 1 - 14 14 - 20 GHz
Gain 13.5 16.5 12 15 10 13 dB
Gain Variation Over Temperature 0.006 0.019 0.017 dB/°C
Noise Figure 2.53.51.8 2.5 2.7 4.0 dB
Input Return Loss 15 13 14 dB
Output Return Loss 815 13 dB
Output Power for 1 dB Compression (P1dB) 15 14.5 13 dBm
Saturated Output Power (Psat) 18 17.5 16 dBm
Output Third Order Intercept (IP3) [2] 31 29 26 dBm
Total Supply Current 70 70 70 mA
[1] Adjust Vgg between -2 to 0V to achieve Idd = 70 mA typical.
[2] Measurement taken at Pout / tone = +8 dBm.
The HMC1049LP5E is a GaAs MMIC Low Noise
Amplier which operates between 0.3 and 20 GHz.
This LNA provides 15 dB of small signal gain, 1.8 dB
noise gure, and output IP3 of 29 dBm, while requiring
only 70 mA from a +7 V supply. The P1dB output
power of 14.5 dBm enables the LNA to function as
a LO driver for balanced, I/Q or image reject mixers.
Vdd can be applied to pin 2 or pin 21. Pin 21 will
require a bias tee. The HMC1049LP5E amplier I/Os
are internally matched to 50 Ohms and the device is
supplied in a compact, leadless QFN 5x5 mm surface
mount package.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
2
HMC1049LP5E
v01.1213
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 0.3 - 20 GHz
Output Return Loss vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
Noise Figure vs. Temperature
Input Return Loss vs. Temperature
Data taken with Vdd applied to pin 2.
Noise Figure vs. Temperature,
Low Frequency
-25
-20
-15
-10
-5
0
5
10
15
20
0 2 4 6 8 10 12 14 16 18 20 22 24
S21 S11 S22
RESPONSE (dB)
FREQUENCY (GHz)
6
8
10
12
14
16
18
20
0 2 4 6 8 10 12 14 16 18 20
+25 C +85 C -40 C
FREQUENCY (GHz)
GAIN (dB)
-30
-25
-20
-15
-10
-5
0
0 2 4 6 8 10 12 14 16 18 20 22
+25 C +85 C -40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0 2 4 6 8 10 12 14 16 18 20
+25 C +85 C -40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
0 2 4 6 8 10 12 14 16 18 20
+25 C +85 C -40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
+25 C +85 C -40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
3
HMC1049LP5E
v01.1213
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 0.3 - 20 GHz
Psat vs. Temperature
Noise Figure vs. Idd
Output IP3 vs. Temperature P1dB vs. Temperature
P1dB vs. Vdd
Data taken with Vdd applied to pin 2.
Noise Figure vs. Vdd
0
1
2
3
4
5
6
0 2 4 6 8 10 12 14 16 18 20
+6V +7V +8V
NOISE FIGURE (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
0 2 4 6 8 10 12 14 16 18 20
60 mA 70 mA 80 mA
NOISE FIGURE (dB)
FREQUENCY (GHz)
10
15
20
25
30
35
0 2 4 6 8 10 12 14 16 18 20
+25 C +85 C -40 C
IP3 (dBm)
FREQUENCY (GHz)
5
8
11
14
17
20
0 2 4 6 8 10 12 14 16 18 20
+25 C +85 C -40 C
P1dB (dBm)
FREQUENCY (GHz)
8
11
14
17
20
23
0 2 4 6 8 10 12 14 16 18 20
+25 C +85 C -40 C
Psat (dBm)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
0 2 4 6 8 10 12 14 16 18 20
+5V +6V +7V
P1dB (dBm)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
4
HMC1049LP5E
v01.1213
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 0.3 - 20 GHz
Power Compression @ 18 GHz
Power Compression @ 2 GHz Power Compression @ 10 GHz
Psat vs. Vdd Reverse Isolation vs. Temperature
Noise Figure, Gain & Power vs.
Supply Voltage @ 12 GHz
Data taken with Vdd applied to pin 2.
6
8
10
12
14
16
18
20
22
0 2 4 6 8 10 12 14 16 18 20
+5V +6V +7V
Psat (dBm)
FREQUENCY (GHz)
-40
-35
-30
-25
-20
-15
-10
-5
0
0 2 4 6 8 10 12 14 16 18 20 22
+25 C +85 C -40 C
ISOLATION (dB)
FREQUENCY (GHz)
0
4
8
12
16
20
24
-10 -8 -6 -4 -2 0 2 4 6 8 10
Gain Pout PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
4
8
12
16
20
24
-10 -8 -6 -4 -2 0 2 4 6 8 10
Gain Pout PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
4
8
12
16
20
-9 -6 -3 0 3 6 9
Gain Pout PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
6
12
18
24
0
1
2
3
4
5 5.5 6 6.5 7
NOISE FIGURE
GAIN Psat
GAIN (dB), Psat (dBm)
NOISE FiIGURE (dB)
Vdd (V)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
5
HMC1049LP5E
v01.1213
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 0.3 - 20 GHz
Data taken with Vdd applied to pin 2.
Noise Figure, Gain & Power vs.
Supply Current @ 12 GHz
0
6
12
18
24
0
1
2
3
4
50 60 70 80
NOISE FIGURE
GAIN Psat
GAIN (dB), Psat (dBm)
NOISE FIGURE (dB)
Idd (mA)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
6
HMC1049LP5E
v01.1213
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 0.3 - 20 GHz
Data taken with Vdd applied to bias tee at pin 21.
Broadband Gain & Return Loss [1] Gain vs. Temperature [1]
Noise Figure vs. Temperature [1] Output IP3 vs. Temperature [1]
P1dB vs. Temperature [1] Psat vs. Temperature [1]
[1] Vdd= +4V, supply to bias tee.
-30
-20
-10
0
10
20
0 4 8 12 16 20 24
S21 S11 S22
RESPONSE (dB)
FREQUENCY (GHz)
6
8
10
12
14
16
18
20
0 2 4 6 8 10 12 14 16 18 20
+25 C +85 C -40 C
FREQUENCY (GHz)
GAIN (dB)
0
1
2
3
4
5
6
0 2 4 6 8 10 12 14 16 18 20
+25 C +85 C -40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
10
15
20
25
30
35
40
0 2 4 6 8 10 12 14 16 18 20
+25 C +85 C -40 C
IP3 (dBm)
FREQUENCY (GHz)
5
8
11
14
17
20
0 2 4 6 8 10 12 14 16 18 20
+25 C +85 C -40 C
P1dB (dBm)
FREQUENCY (GHz)
8
10
12
14
16
18
20
22
24
0 2 4 6 8 10 12 14 16 18 20
+25 C +85 C -40 C
Psat (dBm)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
HMC1049LP5E
v01.1213
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 0.3 - 20 GHz
Absolute Maximum Ratings
Vdd (V) Idd (mA)
+5 70
+6 70
+7 70
Typical Supply Current vs. Vdd
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Adjust Vgg1 to achieve Idd = 70 mA
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS].
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST
BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR
SUGGESTED PCB LAND PATTERN.
Package Information
Part Number Package Body Material Lead Finish MSL Rating [2] Package Marking [1]
HMC1049LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 H1049
XXXX
[1] 4-Digit lot number XXXX
[2] Max peak reow temperature of 260 °C
Drain Bias Voltage (Vdd) +10V
Drain Bias Voltage (RF out / Vdd) +7V
RF Input Power +18 d Bm
Gate Bias Voltage, Vgg1 -2V to +0.2V
Channel Temperature 175 °C
Continuous Pdiss (T = 85 °C)
(derate 37.1 mW/°C above 85 °C) 3.34 W
Thermal Resistance
(Channel to die bottom) 26.9 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
ESD Sensitivity (HBM) Class 1A
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
8
HMC1049LP5E
v01.1213
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 0.3 - 20 GHz
Pad Number Function Description Interface Schematic
1, 3, 6-12, 14,
17-20, 23-29,
31, 32
N/C
No connection required. The pins are not connected inter-
nally; however, all data shown herein was measured with
these pins connected to RF/DC ground externally.
2Vdd Power supply voltage for the amplier. External bypass
capacitors 100 pF, and 0.01 uF are required.
4, 22 GND These pins and the exposed ground paddle must be con-
nected to RF/DC ground.
5RFIN This pin is DC coupled and matched to 50 Ohms.
13 Vgg
Gate control for amplier. External bypass capacitors
100 pF, 0.01uF, and 4.7 uF are required. Adjust voltage to
achieve typical Idd.
15, 16 ACG3, ACG2Low frequency termination. External bypass capacitors
100 pF are required.
21 RFOUT/Vdd This pin is DC coupled and matched to 50 Ohms.
30 ACG1 Low frequency termination. External bypass capacitor
100 pF required.
Pin Descriptions
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
9
HMC1049LP5E
v01.1213
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 0.3 - 20 GHz
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation circuit board shown is available from Hit-
tite upon request.
Evaluation PCB
List of Materials for Evaluation PCB EV1HMC1049LP5 [1]
Item Description
J1, J2, J5, J6 PCB Mount SMA RF Connector.
J3, J4 DC Pins.
C1 - C4 100 pF Capacitor, 0402 Pkg.
C5 - C7 10000 pF Capacitor, 0402 Pkg.
C8 - C9 4.7 uF Capacitor, Tantalum.
U1 HMC1049LP5E.
PCB [1] 600-00541-00-1 Evaluation PCB.
[1] Circuit Board Material: Rogers 4350 or Arlon 25FR
IN OUT
VDD
VGG
600-00541-00-1
J3
J4
+
C9
U1
C7
C1
C2
C3
C4
C5
C6
J1
J6
J5
J2
+
C8
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
10
HMC1049LP5E
v01.1213
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 0.3 - 20 GHz
Evaluation PCB Schematic
