DSI 45 VRRM = 800-1600 V IF(AV)M = 48 A Rectifier Diode VRSM V 900 1300 1700 VRRM Type A TO-247 AD ISOPLUS 247TM Version A Version AR V 800 1200 1600 DSI 45-08A DSI 45-12A DSI 45-16A C C A DSI 45-16AR Symbol Conditions IF(AV)M TC = 105C; 180 sine IFSM TVJ = 45C; VR = 0 V; I2t C 48 A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 475 520 A A TVJ = 150C; VR = 0 V; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 380 420 A A TVJ = 45C; VR = 0 V; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1120 1120 A2s A2 s TVJ = 150C; VR = 0 V; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 720 720 A2s A2 s -40...+150 150 -40...+150 C C C 0.8...1.2 Nm 2500 V~ Md * mounting torque VISOL ** 50/60 Hz, RMS, t = 1 minute, leads-to-tab TAB A = Anode, C = Cathode Maximum Ratings TVJ TVJM Tstg A C (TAB) Features * International standard package * Planar glassivated chips * Version AR isolated and UL registered E153432 * Epoxy meets UL 94V-0 Applications * * * * Supplies for DC power equipment DC supply for PWM inverter Field supply for DC motors Battery DC power supplies Advantages * * * * Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits Dimensions in mm (1 mm = 0.0394") Weight typical 6 g * Verson A only; ** Version AR only Conditions IR TVJ = TVJM; VR = VRRM 3 mA VF IF = 40 A; TVJ = 25C 1.18 V VT0 rT For power-loss calculations only TVJ = TVJM 0.8 8 V m RthJC RthCH DC current typical 0.55 0.2 K/W K/W Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2004 IXYS All rights reserved Characteristic Values Dim. Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C D* 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.212 0.216 0.244 G H 1.65 - 2.13 4.5 0.065 - 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 N 2.2 2.59 0.087 0.102 * ISOPLUS 247 TM without hole 420 Symbol 1-2 DSI 45 70 500 A 104 50Hz, 80% VRRM 2 As A 60 400 IFSM TVJ=150C TVJ= 25C IF 50 VR = 0 V I2t TVJ = 45C 300 40 TVJ = 45C 103 30 200 20 TVJ = 150C TVJ = 150C 100 10 0 0.0 0.4 1.2 V 0.8 102 0 0.001 1.6 0.01 0.1 VF s 1 1 2 3 t Fig. 1 Forward current versus voltage drop per diode 4 5 6 78 ms910 t Fig. 3 I2t versus time per diode Fig. 2 Surge overload current 100 50 RthHA : W A 0.5 K/W 1.0 K/W 1.5K/W 2.0 K/W 3.0 K/W 4.0 K/W 6.0 K/W 80 Ptot 60 40 IF(AV)M 30 40 20 20 10 0 0 0 10 20 30 40 A 0 20 40 60 80 100 120 140 C Id(AV)M Fig. 4 0 Tamb Power dissipation versus direct output current and ambient temperature, sine 180 20 40 60 80 100 120 140 C TC Fig. 5 Max. forward current versus case temperature 0.6 K/W ZthJC 0.4 Constants for ZthJC calculation: 0.2 DSI45 0.01 0.1 Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, test conditions and dimensions. (c) 2004 IXYS All rights reserved s 1 Rthi (K/W) ti (s) 1 2 3 4 0.1633 0.2517 0.0933 0.04167 0.016 0.118 0.588 2.6 10 t 420 0.0 0.001 i 2-2