Freescale Semiconductor Technical Data Document Number: AFT18H357--24N Rev. 0, 5/2015 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz. AFT18H357--24NR6 1800 MHz Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQA = 800 mA, VGSB = 0.9 V, Pout = 63 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) D (%) Output PAR (dB) ACPR (dBc) 1805 MHz 17.5 48.7 7.6 -37.5 1840 MHz 17.6 48.3 7.7 -38.9 1880 MHz 17.4 48.2 7.7 -38.5 1805-1880 MHz, 63 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR Features Advanced high performance in--package Doherty High thermal conductivity packaging technology for reduced thermal resistance Greater negative gate--source voltage range for improved Class C operation Designed for digital predistortion error correction systems OM--1230--4L2L PLASTIC 6 VBWA(1) Carrier RFinA/VGSA 1 5 RFoutA/VDSA RFinB/VGSB 2 4 RFoutB/VDSB Peaking 3 VBWB(1) (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Pin Connections 1. Device cannot operate with the VDD current supplied through pin 3 and pin 6. Freescale Semiconductor, Inc., 2015. All rights reserved. RF Device Data Freescale Semiconductor, Inc. AFT18H357--24NR6 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS -0.5, +65 Vdc Gate--Source Voltage VGS -6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg -65 to +150 C Case Operating Temperature Range TC -40 to +150 C Operating Junction Temperature Range (1,2) TJ -40 to +225 C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 75C, 63 W Avg., W--CDMA, 28 Vdc, IDQA = 800 mA, VGSB = 0.7 Vdc, 1840 MHz Symbol Value (2,3) Unit RJC 0.23 C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) B Charge Device Model (per JESD22--C101) IV Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 140 Adc) VGS(th) 0.8 1.2 1.6 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, IDA = 800 mAdc, Measured in Functional Test) VGSA(Q) 1.4 1.8 2.2 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1.4 Adc) VDS(on) 0.1 0.2 0.3 Vdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 240 Adc) VGS(th) 0.8 1.2 1.6 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 2.4 Adc) VDS(on) 0.1 0.2 0.3 Vdc Characteristic Off Characteristics (4) On Characteristics -- Side A (4) On Characteristics -- Side B (4) 1. 2. 3. 4. Continuous use at maximum temperature will affect MTTF. MTTF calculator available at http://www.freescale.com/rf/calculators. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955. Each side of device measured separately. (continued) AFT18H357--24NR6 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit (1,2) Functional Tests (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 800 mA, VGSB = 0.9 V, Pout = 63 W Avg., f = 1805 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Gps 16.2 17.5 19.2 dB Drain Efficiency D 42.0 48.7 -- % PAR 6.9 7.6 -- dB ACPR -- -37.5 -30.0 dBc Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Load Mismatch 10% Duty Cycle (2) (In Freescale Doherty Test Fixture, 50 ohm system) IDQA = 800 mA, VGSB = 0.9 V, f = 1840 MHz, 100 sec(on), VSWR 10:1 at 32 Vdc, 339 W Pulsed CW Output Power (3 dB Input Overdrive from 190 W Pulsed CW Rated Power) No Device Degradation Typical Performance (2) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 800 mA, VGSB = 0.9 Vdc, 1805-1880 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB -- 200 -- W (3) P3dB -- 316 -- W AM/PM (Maximum value measured at the P3dB compression point across the 1805--1880 MHz bandwidth) -- -16 -- VBWres -- 60 -- MHz Gain Flatness in 75 MHz Bandwidth @ Pout = 63 W Avg. GF -- 0.3 -- dB Gain Variation over Temperature (-30C to +85C) G -- 0.004 -- dB/C P1dB -- 0.008 -- dB/C Pout @ 3 dB Compression Point VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Output Power Variation over Temperature (-30C to +85C) Table 6. Ordering Information Device AFT18H357--24NR6 Tape and Reel Information R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel Package OM--1230--4L2L 1. Part internally matched both on input and output. 2. Measurements made with device in an asymmetrical Doherty configuration. 3. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF. AFT18H357--24NR6 RF Device Data Freescale Semiconductor, Inc. 3 VGGA VDDA -C11 C1 C9 C17 C18 P CUT OUT AREA R1 C R3 C7* C8* R2 C6 C22 C19 AFT18H357--24N Rev. 1 C13 C21 C5 Z1 C3 C15 C12 C10 C2 C14 C4 D65431 C16 -- VDDB VGGB *C7 and C8 are mounted vertically. Note: C20 component not used. Figure 2. AFT18H357--24NR6 Test Circuit Component Layout Table 7. AFT18H357--24NR6 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C3, C4 20 pF Chip Capacitors ATC600F200JT250XT ATC C5, C6 12 pF Chip Capacitors ATC600F120JT250XT ATC C7 6.2 pF Chip Capacitor ATC600F6R2JT250XT ATC C8 6.8 pF Chip Capacitor ATC600F6R8JT250XT ATC C9, C10, C11, C12, C13, C14 10 F Chip Capacitors C5750X7R1H106M230KB TDK C15, C16 220 F, 100 V Electrolytic Capacitors EEV-FK2A221M Panasonic-ECG C17 0.8 pF Chip Capacitor ATC600F0R8BT250XT ATC C18 1 pF Chip Capacitor ATC600F1R0BT250XT ATC C19 1.2 pF Chip Capacitor ATC600F1R2BT250XT ATC C21, C22 2.2 F Chip Capacitors C3225X7R2A225K230AB TDK R1, R2 2.2 , 1/4 W Chip Resistors CRCW12062R20JNEA Vishay R3 50 , 4 W Chip Resistor CW12010T0050GBK ATC Z1 1700-2000 MHz Band, 90, 5 dB Hybrid Coupler X3C19P1-05S Anaren PCB Rogers RO4350B, 0.020, r = 3.66 D65431 MTL AFT18H357--24NR6 4 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS -- 1805-1880 MHz 50 49 17.5 48 D 47 17.4 Gps 17.3 Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 17.2 PARC 17.1 17 16.8 1760 1780 1800 -2.1 -35 -2.2 -36 -37 ACPR 16.9 -34 ACPR (dBc) Gps, POWER GAIN (dB) 17.6 -38 1820 1840 1860 f, FREQUENCY (MHz) 1880 1900 -2.3 -2.4 -2.5 PARC (dB) VDD = 28 Vdc, Pout = 63 W (Avg.), IDQA = 800 mA, VGSB = 0.9 Vdc 17.7 Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth D, DRAIN EFFICIENCY (%) 51 17.8 -2.6 -39 1920 IMD, INTERMODULATION DISTORTION (dBc) Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 63 Watts Avg. 0 VDD = 28 Vdc, Pout = 130 W (PEP), IDQA = 800 mA VGSB = 0.9 Vdc, Two--Tone Measurements -15 (f1 + f2)/2 = Center Frequency of 1840 MHz IM3--U IM3--L -30 -45 IM5--U IM5--L IM7--U -60 -75 1 IM7--L 10 250 100 TWO-TONE SPACING (MHz) Figure 4. Intermodulation Distortion Products versus Two--Tone Spacing 17.5 17 16.5 16 VDD = 28 Vdc, IDQA = 800 mA, VGSB = 0.9 Vdc f = 1840 MHz, Single--Carrier W--CDMA 0 -1 dB = 34.8 W -1 D ACPR 60 -25 50 -30 40 -2 30 Gps -2 dB = 55.0 W -3 -3 dB = 75.8 W -4 20 PARC 10 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF -5 5 30 55 80 Pout, OUTPUT POWER (WATTS) 105 0 130 -35 -40 ACPR (dBc) 18 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) 18.5 1 D DRAIN EFFICIENCY (%) 19 -45 -50 -55 Figure 5. Output Peak--to--Average Ratio Compression (PARC) versus Output Power AFT18H357--24NR6 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS -- 1805-1880 MHz VDD = 28 Vdc, IDQA = 800 mA, VGSB = 0.9 Vdc Single--Carrier W--CDMA, 3.84 MHz Channel 20 Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 18 1880 MHz ACPR 50 -10 40 1840 MHz 30 1805 MHz 1880 MHz 14 0 D Gps 1880 MHz 1840 MHz 1840 MHz 12 20 10 -20 -30 -40 ACPR (dBc) 16 1805 MHz 60 D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 22 -50 1805 MHz 10 0 400 10 100 Pout, OUTPUT POWER (WATTS) AVG. 1 -60 Figure 6. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 20 Gain 18 GAIN (dB) 16 14 VDD = 28 Vdc Pin = 0 dBm IDQA = 800 mA VGSB = 0.9 Vdc 12 10 8 1600 1680 1760 1840 1920 2000 f, FREQUENCY (MHz) 2080 2160 2240 Figure 7. Broadband Frequency Response AFT18H357--24NR6 6 RF Device Data Freescale Semiconductor, Inc. Table 8. Carrier Side Load Pull Performance -- Maximum Power Tuning VDD = 28 Vdc, IDQA = 818 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P1dB f (MHz) Zsource () Zin () 1805 1.25 - j3.37 1.01 + j3.46 1840 1.53 - j3.73 1.22 + j3.66 1880 1.82 - j4.02 1.55 + j3.98 Zload () (1) Gain (dB) (dBm) (W) D (%) AM/PM () 1.37 - j3.14 19.2 51.6 145 56.5 -10 1.35 - j3.34 18.9 51.6 146 55.3 -10 1.32 - j3.25 19.1 51.5 142 55.4 -11 Max Output Power P3dB f (MHz) Zsource () Zin () Zload (2) () Gain (dB) (dBm) (W) D (%) AM/PM () 1805 1.25 - j3.37 0.95 + j3.58 1.34 - j3.29 17.0 52.4 173 57.9 -14 1840 1.53 - j3.73 1.13 + j3.82 1.32 - j3.39 16.8 52.4 175 57.1 -15 1880 1.82 - j4.02 1.51 + j4.18 1.35 - j3.58 16.7 52.3 170 55.6 -16 (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 9. Carrier Side Load Pull Performance -- Maximum Drain Efficiency Tuning VDD = 28 Vdc, IDQA = 818 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P1dB Gain (dB) (dBm) (W) D (%) AM/PM () 2.78 - j2.07 21.6 49.9 97 69.1 -15 1.19 + j3.79 2.61 - j1.97 21.6 49.8 96 68.8 -17 1.56 + j4.13 2.43 - j1.75 21.8 49.4 87 67.3 -19 (W) D (%) AM/PM () f (MHz) Zsource () Zin () 1805 1.25 - j3.37 1.00 + j3.59 1840 1.53 - j3.73 1880 1.82 - j4.02 Zload () (1) Max Drain Efficiency P3dB f (MHz) Zsource () Zin () 1805 1.25 - j3.37 0.91 + j3.67 1840 1.53 - j3.73 1.10 + j3.88 1880 1.82 - j4.02 1.44 + j4.27 Zload () (2) Gain (dB) (dBm) 2.69 - j1.94 19.7 50.5 111 70.0 -23 2.51 - j2.05 19.5 50.6 115 69.4 -23 2.17 - j2.01 19.5 50.5 111 67.7 -25 (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload AFT18H357--24NR6 RF Device Data Freescale Semiconductor, Inc. 7 Table 10. Peaking Side Load Pull Performance -- Maximum Power Tuning VDD = 28 Vdc, VGSB = 0.8 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P1dB f (MHz) Zsource () Zin () 1805 1.00 - j3.10 0.73 + j3.40 1840 0.92 - j3.29 0.81 + j3.51 1880 1.42 - j3.53 1.14 + j3.76 Zload () (1) Gain (dB) (dBm) (W) D (%) AM/PM () 1.62 - j4.46 15.0 53.6 230 54.3 -25 1.73 - j4.64 15.4 53.6 229 55.1 -30 1.80 - j4.91 15.2 53.6 227 54.1 -30 Max Output Power P3dB f (MHz) Zsource () Zin () Zload (2) () Gain (dB) (dBm) (W) D (%) AM/PM () 1805 1.00 - j3.10 0.73 + j3.48 1.73 - j4.60 13.0 54.2 262 56.4 -32 1840 0.92 - j3.29 0.82 + j3.62 1.78 - j4.89 13.2 54.2 263 55.4 -37 1880 1.42 - j3.53 1.21 + j3.91 1.88 - j5.16 13.1 54.1 259 54.2 -37 (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 11. Peaking Side Load Pull Performance -- Maximum Drain Efficiency Tuning VDD = 28 Vdc, VGSB = 0.8 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P1dB Gain (dB) (dBm) (W) D (%) AM/PM () 3.45 - j2.79 16.5 52.0 158 67.6 -34 0.70 + j3.48 3.30 - j2.43 16.8 51.6 145 67.5 -39 0.95 + j3.69 2.79 - j1.51 16.4 50.4 110 67.9 -44 f (MHz) Zsource () Zin () 1805 1.00 - j3.10 0.64 + j3.39 1840 0.92 - j3.29 1880 1.42 - j3.53 Zload () (1) Max Drain Efficiency P3dB f (MHz) Zsource () Zin () 1805 1.00 - j3.10 0.68 + j3.48 1840 0.92 - j3.29 0.75 + j3.59 1880 1.42 - j3.53 1.09 + j3.87 Zload () (2) Gain (dB) (dBm) (W) D (%) AM/PM () 3.74 - j3.07 14.4 52.5 177 67.7 -43 3.48 - j2.43 14.8 52.0 159 67.6 -51 2.97 - j2.83 14.6 52.3 172 67.2 -49 (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload AFT18H357--24NR6 8 RF Device Data Freescale Semiconductor, Inc. P1dB -- TYPICAL CARRIER LOAD PULL CONTOURS -- 1840 MHz 0 0 47.5 48 --1 48.5 49 --2 IMAGINARY () IMAGINARY () --1 E 49.5 --3 51.5 P 51 50 50.5 E 62 --3 P --4 --5 0.5 --5 0.5 1 1.5 2 REAL () 3 2.5 3.5 64 66 60 58 --4 Figure 8. P1dB Load Pull Output Power Contours (dBm) 56 1 1.5 2 REAL () 54 52 3 2.5 3.5 Figure 9. P1dB Load Pull Efficiency Contours (%) 0 0 22.5 --1 22 --2 E 21.5 21 --3 P 20.5 --4 18.5 --5 0.5 1 1.5 2 REAL () 2.5 --20 --2 E 3 P Figure 10. P1dB Load Pull Gain Contours (dB) NOTE: --16 --12 --4 3.5 --18 --14 --3 --10 20 19.5 19 --22 --1 IMAGINARY () IMAGINARY () 68 --2 --5 0.5 --8 1 1.5 2 REAL () 2.5 3 3.5 Figure 11. P1dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power AFT18H357--24NR6 RF Device Data Freescale Semiconductor, Inc. 9 P3dB -- TYPICAL CARRIER LOAD PULL CONTOURS -- 1840 MHz 0 0 48.5 49 --1 49.5 50 --2 IMAGINARY () IMAGINARY () --1 E 50.5 51 51.5 --3 P 52 --4 64 --2 E 68 66 --3 64 P 62 --4 60 58 56 54 --5 0.5 1 1.5 2 REAL () 3 2.5 --5 0.5 3.5 Figure 12. P3dB Load Pull Output Power Contours (dBm) 1.5 2 REAL () 2.5 3 3.5 Figure 13. P3dB Load Pull Efficiency Contours (%) 0 0 20.5 --1 --1 20 --2 E IMAGINARY () IMAGINARY () 1 19.5 19 --3 P 17.5 18.5 18 --4 --28 --2 --24 16.5 1 1.5 E --20 --16 P --14 --12 17 2 REAL () --22 --18 --3 --4 --5 0.5 --26 2.5 3 3.5 Figure 14. P3dB Load Pull Gain Contours (dB) NOTE: --5 0.5 1 1.5 2 REAL () 2.5 3 3.5 Figure 15. P3dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power AFT18H357--24NR6 10 RF Device Data Freescale Semiconductor, Inc. P1dB -- TYPICAL PEAKING LOAD PULL CONTOURS -- 1840 MHz 1 1 0 49.5 --1 50 --2 51 51.5 E 50.5 --3 52 --4 P --5 52.5 53.5 --7 1.5 1 3.5 4 15 0 E --4 P 1 1.5 2 3 2.5 REAL () 3.5 4 4.5 1 16 15.5 0 --1 --2 IMAGINARY () IMAGINARY () 66 Figure 17. P1dB Load Pull Efficiency Contours (%) --1 E --3 16.5 --4 16 P --5 13 1 13.5 1.5 14 3 2.5 REAL () --38 --3 --34 --4 P --30 3.5 4 4.5 Figure 18. P1dB Load Pull Gain Contours (dB) NOTE: --7 --40 E --36 --32 --28 --6 14.5 2 --44 --42 --2 --5 15.5 15 --6 --7 52 --3 --7 4.5 Figure 16. P1dB Load Pull Output Power Contours (dBm) 1 64 --6 3 2.5 REAL () 2 60 54 58 62 --2 --5 53 --6 56 --1 IMAGINARY () IMAGINARY () 0 1 1.5 2 3 2.5 REAL () 3.5 4 4.5 Figure 19. P1dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power AFT18H357--24NR6 RF Device Data Freescale Semiconductor, Inc. 11 P3dB -- TYPICAL PEAKING LOAD PULL CONTOURS -- 1840 MHz 1 1 0 0 IMAGINARY () 50.5 51.5 --2 E 52 --3 52.5 --4 54 P --5 53 53.5 --7 52.5 1.5 1 1 13 0 3 2.5 REAL () 2 3.5 4 66 E --3 --4 --7 4.5 P 1 1.5 2 3 2.5 REAL () 3.5 4 4.5 Figure 21. P3dB Load Pull Efficiency Contours (%) 1 14 13.5 0 --1 --2 IMAGINARY () --1 IMAGINARY () --2 --6 52.5 Figure 20. P3dB Load Pull Output Power Contours (dBm) E --3 14.5 --4 14 P --5 11 1 1.5 2 3 2.5 REAL () E --3 --52 --50 --48 --46 --44 --42 --4 --40 P --38 --6 12.5 11.5 12 --54 --2 --5 13.5 13 --6 --7 52 56 --5 --6 62 64 --1 51 IMAGINARY () 50 --1 58 60 54 3.5 4 4.5 Figure 22. P3dB Load Pull Gain Contours (dB) NOTE: --7 1 1.5 2 3 2.5 REAL () 3.5 4 4.5 Figure 23. P3dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power AFT18H357--24NR6 12 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS AFT18H357--24NR6 RF Device Data Freescale Semiconductor, Inc. 13 AFT18H357--24NR6 14 RF Device Data Freescale Semiconductor, Inc. AFT18H357--24NR6 RF Device Data Freescale Semiconductor, Inc. 15 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model .s2p File Development Tools Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go to http://www.freescale.com/rf 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 May 2015 Description Initial Release of Data Sheet AFT18H357--24NR6 16 RF Device Data Freescale Semiconductor, Inc. How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including "typicals," must be validated for each customer application by customer's technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. E 2015 Freescale Semiconductor, Inc. AFT18H357--24NR6 Document Number: RF Device DataAFT18H357--24N Rev. 0, 5/2015Semiconductor, Inc. Freescale 17