AFT18H357--24NR6
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 63 W asymmetrical Doherty RF power LDMOS transistor is designed
for cellular base station applications covering the frequency range of 1805 to
1880 MHz.
1800 MHz
Typical Doherty Single--Carrier W--CDMA Performance: VDD =28Vdc,
IDQA = 800 mA, VGSB =0.9V,P
out = 63 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
1805 MHz 17.5 48.7 7.6 –37.5
1840 MHz 17.6 48.3 7.7 –38.9
1880 MHz 17.4 48.2 7.7 –38.5
Features
Advanced high performance in--package Doherty
High thermal conductivity packaging technology for reduced thermal
resistance
Greater negative gate--source voltage range for improved Class C operation
Designed for digital predistortion error correction systems
Document Number: AFT18H357--24N
Rev. 0, 5/2015
Freescale Semiconductor
Technical Data
1805–1880 MHz, 63 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
AFT18H357--24NR6
1. Device cannot operate with the VDD current
supplied through pin 3 and pin 6.
(Top View)
RFoutA/VDSA
RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
VBWA(1)
6
3
15
24
Carrier
Peaking
VBWB(1)
Figure 1. Pin Connections
Note: Exposed backside of the package is
the source terminal for the transistors.
OM--1230--4L2L
PLASTIC
Freescale Semiconductor, Inc., 2015.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
AFT18H357--24NR6
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS –0.5, +65 Vdc
Gate--Source Voltage VGS –6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg –65 to +150 C
Case Operating Temperature Range TC–40 to +150 C
Operating Junction Temperature Range (1,2) TJ–40 to +225 C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 75C, 63 W Avg., W--CDMA, 28 Vdc, IDQA = 800 mA, VGSB =0.7Vdc,
1840 MHz
RJC 0.23 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2
Machine Model (per EIA/JESD22--A115) B
Charge Device Model (per JESD22--C101) IV
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3260 C
Table 5. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics (4)
Zero Gate Voltage Drain Leakage Current
(VDS =65Vdc,V
GS =0Vdc)
IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS =28Vdc,V
GS =0Vdc)
IDSS — — 1 Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 Adc
On Characteristics -- Side A (4)
Gate Threshold Voltage
(VDS =10Vdc,I
D= 140 Adc)
VGS(th) 0.8 1.2 1.6 Vdc
Gate Quiescent Voltage
(VDD =28Vdc,I
DA = 800 mAdc, Measured in Functional Test)
VGSA(Q) 1.4 1.8 2.2 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=1.4Adc)
VDS(on) 0.1 0.2 0.3 Vdc
On Characteristics -- Side B (4)
Gate Threshold Voltage
(VDS =10Vdc,I
D= 240 Adc)
VGS(th) 0.8 1.2 1.6 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=2.4Adc)
VDS(on) 0.1 0.2 0.3 Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf/calculators.
3. Refer to AN1955,Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955.
4. Each side of device measured separately.
(continued)
AFT18H357--24NR6
3
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests (1,2) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28Vdc,I
DQA = 800 mA, VGSB =0.9V,
Pout = 63 W Avg., f = 1805 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @ 5MHzOffset.
Power Gain Gps 16.2 17.5 19.2 dB
Drain Efficiency D42.0 48.7 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 6.9 7.6 —dB
Adjacent Channel Power Ratio ACPR —–37.5 –30.0 dBc
Load Mismatch (2) (In Freescale Doherty Test Fixture, 50 ohm system) IDQA = 800 mA, VGSB = 0.9 V, f = 1840 MHz, 100 sec(on),
10% Duty Cycle
VSWR 10:1 at 32 Vdc, 339 W Pulsed CW Output Power
(3 dB Input Overdrive from 190 W Pulsed CW Rated Power)
No Device Degradation
Typical Performance (2) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28Vdc,I
DQA = 800 mA, VGSB =0.9Vdc,
1805–1880 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB —200 — W
Pout @ 3 dB Compression Point (3) P3dB —316 — W
AM/PM
(Maximum value measured at the P3dB compression point across
the 1805--1880 MHz bandwidth)
—–16 —
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres —60 —MHz
Gain Flatness in 75 MHz Bandwidth @ Pout =63WAvg. GF—0.3 —dB
Gain Variation over Temperature
(–30Cto+85C)
G — 0.004 —dB/C
Output Power Variation over Temperature
(–30Cto+85C)
P1dB —0.008 —dB/C
Table 6. Ordering Information
Device Tape and Reel Information Package
AFT18H357--24NR6 R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel OM--1230--4L2L
1. Part internally matched both on input and output.
2. Measurements made with device in an asymmetrical Doherty configuration.
3. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
4
RF Device Data
Freescale Semiconductor, Inc.
AFT18H357--24NR6
Figure 2. AFT18H357--24NR6 Test Circuit Component Layout
VGGA
VDDA
--
--
CUT OUT AREA
C
P
C1
C9
R1
C5
C11 C3
C21
Z1
R3
C17
C18
C6
C19
R2
C2
C10
D65431
AFT18H357--24N
Rev. 1
VGGB
VDDB
C14 C4
C22
C12
C16
C8*
C7*
C13
C15
*C7 and C8 are mounted vertically.
Note: C20 component not used.
Table 7. AFT18H357--24NR6 Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C2, C3, C4 20 pF Chip Capacitors ATC600F200JT250XT ATC
C5, C6 12 pF Chip Capacitors ATC600F120JT250XT ATC
C7 6.2 pF Chip Capacitor ATC600F6R2JT250XT ATC
C8 6.8 pF Chip Capacitor ATC600F6R8JT250XT ATC
C9, C10, C11, C12, C13, C14 10 F Chip Capacitors C5750X7R1H106M230KB TDK
C15, C16 220 F, 100 V Electrolytic Capacitors EEV-FK2A221M Panasonic-ECG
C17 0.8 pF Chip Capacitor ATC600F0R8BT250XT ATC
C18 1 pF Chip Capacitor ATC600F1R0BT250XT ATC
C19 1.2 pF Chip Capacitor ATC600F1R2BT250XT ATC
C21, C22 2.2 F Chip Capacitors C3225X7R2A225K230AB TDK
R1, R2 2.2 , 1/4 W Chip Resistors CRCW12062R20JNEA Vishay
R3 50 , 4 W Chip Resistor CW12010T0050GBK ATC
Z1 1700–2000 MHz Band, 90, 5 dB Hybrid Coupler X3C19P1-05S Anaren
PCB Rogers RO4350B, 0.020,r=3.66 D65431 MTL
AFT18H357--24NR6
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 1805–1880 MHz
PARC (dB)
–2.5
–2.1
–2.2
–2.3
–2.4
–2.6
1760
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 63 Watts Avg.
16.8
17.8
17.7
17.6
–39
51
50
49
48
–34
–35
–36
–37
D, DRAIN
EFFICIENCY (%)
Gps, POWER GAIN (dB)
17.5
17.4
17.3
17.2
17.1
17
16.9
1780 1800 1820 1840 1860 1880 1900 1920
47
–38
ACPR (dBc)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO–TONE SPACING (MHz)
10
–75
0
–15
–30
–60
1 250
IMD, INTERMODULATION DISTORTION (dBc)
–45
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
Pout, OUTPUT POWER (WATTS)
–1
–3
30
0
–2
–4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
5 55 80 130
0
60
50
40
30
20
10
DDRAIN EFFICIENCY (%)
105
D
ACPR
PARC
ACPR (dBc)
–55
–25
–30
–35
–45
–40
–50
19
Gps, POWER GAIN (dB)
18.5
18
17.5
17
16.5
16
Gps
–5
1
ACPR
PARC
Gps
VDD =28Vdc,P
out =63W(Avg.),I
DQA = 800 mA, VGSB =0.9Vdc
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
IM3--U
IM5--U
IM7--L
IM7--U
IM3--L
100
–1 dB = 34.8 W
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
–2 dB = 55.0 W
–3 dB = 75.8 W
VDD =28Vdc,I
DQA = 800 mA, VGSB =0.9Vdc
f = 1840 MHz, Single--Carrier W--CDMA
D
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
IM5--L
VDD =28Vdc,P
out = 130 W (PEP), IDQA = 800 mA
VGSB = 0.9 Vdc, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1840 MHz
6
RF Device Data
Freescale Semiconductor, Inc.
AFT18H357--24NR6
TYPICAL CHARACTERISTICS — 1805–1880 MHz
1
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
–10
–20
10 0
60
50
40
30
20
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
22
20
10 100 400
10
–60
ACPR (dBc)
18
16
14
0
–30
–40
–50
Figure 7. Broadband Frequency Response
8
20
f, FREQUENCY (MHz)
VDD =28Vdc
Pin =0dBm
IDQA = 800 mA
VGSB =0.9Vdc
16
14
12
GAIN (dB)
18
10
1600 1680 1760 1840 1920 2000 2080 2160 2240
Gain
ACPR
D
1805 MHz
Gps
1840 MHz
1880 MHz
1880 MHz
1840 MHz
1805 MHz
1805 MHz
1840 MHz
1880 MHz
VDD =28Vdc,I
DQA = 800 mA, VGSB =0.9Vdc
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
12
AFT18H357--24NR6
7
RF Device Data
Freescale Semiconductor, Inc.
Table 8. Carrier Side Load Pull Performance — Maximum Power Tuning
VDD =28Vdc,I
DQA = 818 mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1805 1.25 – j3.37 1.01 + j3.46 1.37 – j3.14 19.2 51.6 145 56.5 –10
1840 1.53 – j3.73 1.22 + j3.66 1.35 – j3.34 18.9 51.6 146 55.3 –10
1880 1.82 – j4.02 1.55 + j3.98 1.32 – j3.25 19.1 51.5 142 55.4 –11
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1805 1.25 – j3.37 0.95 + j3.58 1.34 – j3.29 17.0 52.4 173 57.9 –14
1840 1.53 – j3.73 1.13 + j3.82 1.32 – j3.39 16.8 52.4 175 57.1 –15
1880 1.82 – j4.02 1.51 + j4.18 1.35 – j3.58 16.7 52.3 170 55.6 –16
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 9. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning
VDD =28Vdc,I
DQA = 818 mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1805 1.25 – j3.37 1.00 + j3.59 2.78 – j2.07 21.6 49.9 97 69.1 –15
1840 1.53 – j3.73 1.19 + j3.79 2.61 – j1.97 21.6 49.8 96 68.8 –17
1880 1.82 – j4.02 1.56 + j4.13 2.43 – j1.75 21.8 49.4 87 67.3 –19
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1805 1.25 – j3.37 0.91 + j3.67 2.69 – j1.94 19.7 50.5 111 70.0 –23
1840 1.53 – j3.73 1.10 + j3.88 2.51 – j2.05 19.5 50.6 115 69.4 –23
1880 1.82 – j4.02 1.44 + j4.27 2.17 – j2.01 19.5 50.5 111 67.7 –25
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin Zload
Output Load Pull
Tuner and Test
Circuit
8
RF Device Data
Freescale Semiconductor, Inc.
AFT18H357--24NR6
Table 10. Peaking Side Load Pull Performance — Maximum Power Tuning
VDD =28Vdc,V
GSB =0.8Vdc,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1805 1.00 – j3.10 0.73 + j3.40 1.62 – j4.46 15.0 53.6 230 54.3 –25
1840 0.92 – j3.29 0.81 + j3.51 1.73 – j4.64 15.4 53.6 229 55.1 –30
1880 1.42 – j3.53 1.14 + j3.76 1.80 – j4.91 15.2 53.6 227 54.1 –30
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1805 1.00 – j3.10 0.73 + j3.48 1.73 – j4.60 13.0 54.2 262 56.4 –32
1840 0.92 – j3.29 0.82 + j3.62 1.78 – j4.89 13.2 54.2 263 55.4 –37
1880 1.42 – j3.53 1.21 + j3.91 1.88 – j5.16 13.1 54.1 259 54.2 –37
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 11. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning
VDD =28Vdc,V
GSB =0.8Vdc,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1805 1.00 – j3.10 0.64 + j3.39 3.45 – j2.79 16.5 52.0 158 67.6 –34
1840 0.92 – j3.29 0.70 + j3.48 3.30 – j2.43 16.8 51.6 145 67.5 –39
1880 1.42 – j3.53 0.95 + j3.69 2.79 – j1.51 16.4 50.4 110 67.9 –44
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1805 1.00 – j3.10 0.68 + j3.48 3.74 – j3.07 14.4 52.5 177 67.7 –43
1840 0.92 – j3.29 0.75 + j3.59 3.48 – j2.43 14.8 52.0 159 67.6 –51
1880 1.42 – j3.53 1.09 + j3.87 2.97 – j2.83 14.6 52.3 172 67.2 –49
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin Zload
Output Load Pull
Tuner and Test
Circuit
AFT18H357--24NR6
9
RF Device Data
Freescale Semiconductor, Inc.
P1dB -- TYPICAL CARRIER LOAD PULL CONTOURS — 1840 MHz
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 8. P1dB Load Pull Output Power Contours (dBm)
REAL ()
0
-- 2
IMAGINARY ()
1.5 2 2.50.5 3.5
-- 1
-- 4
-- 5
1
Figure 9. P1dB Load Pull Efficiency Contours (%)
REAL ()
Figure 10. P1dB Load Pull Gain Contours (dB)
REAL ()
Figure 11. P1dB Load Pull AM/PM Contours ()
REAL ()
3
-- 3
0
-- 2
IMAGINARY ()
1.5 2 2.50.5 3.5
-- 1
-- 4
-- 5
13
-- 3
0
-- 2
IMAGINARY ()
1.5 2 2.50.5 3.5
-- 1
-- 4
-- 5
13
-- 3
0
-- 2
IMAGINARY ()
1.5 2 2.50.5 3.5
-- 1
-- 4
-- 5
13
-- 3
47.5
P
E
48.5
48
49
49.5
50
50.551
51.5
54
52
56
P
E
58
60
62 64 66
68
P
E
18.5 19 19.5 20
20.5
21
21.5
22
22.5
-- 1 8
-- 1 6
-- 1 4
-- 1 0
-- 8
-- 1 2
-- 2 0
P
E
-- 2 2
10
RF Device Data
Freescale Semiconductor, Inc.
AFT18H357--24NR6
P3dB -- TYPICAL CARRIER LOAD PULL CONTOURS — 1840 MHz
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 12. P3dB Load Pull Output Power Contours (dBm)
REAL ()
0
-- 2
IMAGINARY ()
1.5 2 2.50.5 3.5
-- 1
-- 4
-- 5
1
Figure 13. P3dB Load Pull Efficiency Contours (%)
REAL ()
Figure 14. P3dB Load Pull Gain Contours (dB)
REAL ()
Figure 15. P3dB Load Pull AM/PM Contours ()
REAL ()
3
-- 3
0
-- 2
IMAGINARY ()
1.5 2 2.50.5 3.5
-- 1
-- 4
-- 5
13
-- 3
0
-- 2
IMAGINARY ()
1.5 2 2.50.5 3.5
-- 1
-- 4
-- 5
13
-- 3
0
-- 2
IMAGINARY ()
1.5 2 2.50.5 3.5
-- 1
-- 4
-- 5
13
-- 3 -- 1 8
-- 1 6
-- 1 4
P
E
-- 1 2
-- 2 0
16.5 17
P
E
54
62
P
E
64
P
E
48.5 49
50
49.5
50.5
51
51.5
52
56
58
60
66
68
64
17.5 18 18.5
19
19.5
20
20.5
-- 2 2
-- 2 4
-- 2 6
-- 2 8
AFT18H357--24NR6
11
RF Device Data
Freescale Semiconductor, Inc.
P1dB -- TYPICAL PEAKING LOAD PULL CONTOURS — 1840 MHz
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 16. P1dB Load Pull Output Power Contours (dBm)
REAL ()
0
-- 2
IMAGINARY ()
1.5 2 2.514.5
-- 1
-- 4
-- 7
Figure 17. P1dB Load Pull Efficiency Contours (%)
REAL ()
Figure 18. P1dB Load Pull Gain Contours (dB)
REAL ()
Figure 19. P1dB Load Pull AM/PM Contours ()
REAL ()
3
-- 3
1
-- 5
-- 6
3.5 4
0
-- 2
IMAGINARY ()
1.5 2 2.514.5
-- 1
-- 4
-- 7
3
-- 3
1
-- 5
-- 6
3.5 4
0
-- 2
IMAGINARY ()
1.5 2 2.514.5
-- 1
-- 4
-- 7
3
-- 3
1
-- 5
-- 6
3.5 4
0
-- 2
IMAGINARY ()
1.5 2 2.514.5
-- 1
-- 4
-- 7
3
-- 3
1
-- 5
-- 6
3.5 4
P
E
50
49.5
P
E
13.5
13
P
E
-- 2 8
P
E
50.5
51
51.5
52
52.5
53
53.5
52
54
56
58
60
62
64 66
14 14.5
15 15.5
16
16.5
-- 3 0
-- 3 2
-- 3 4 -- 3 6
-- 3 8 -- 4 0
-- 4 2 -- 4 4
15 15.5 16
12
RF Device Data
Freescale Semiconductor, Inc.
AFT18H357--24NR6
P3dB -- TYPICAL PEAKING LOAD PULL CONTOURS — 1840 MHz
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 20. P3dB Load Pull Output Power Contours (dBm)
REAL ()
0
-- 2
IMAGINARY ()
1.5 2 2.514.5
-- 1
-- 4
-- 7
Figure 21. P3dB Load Pull Efficiency Contours (%)
REAL ()
Figure 22. P3dB Load Pull Gain Contours (dB)
REAL ()
Figure 23. P3dB Load Pull AM/PM Contours ()
REAL ()
3
-- 3
1
-- 5
-- 6
3.5 4
0
-- 2
IMAGINARY ()
1.5 2 2.514.5
-- 1
-- 4
-- 7
3
-- 3
1
-- 5
-- 6
3.5 4
0
-- 2
IMAGINARY ()
1.5 2 2.514.5
-- 1
-- 4
-- 7
3
-- 3
1
-- 5
-- 6
3.5 4
0
-- 2
IMAGINARY ()
1.5 2 2.514.5
-- 1
-- 4
-- 7
3
-- 3
1
-- 5
-- 6
3.5 4
P
E
50.5
50
51
51.5
52
52.5
53
53.5
54
52.5 52.5
52
P
E
54
56
58 60 62
64
66
11.5
11
P
E
12 12.5
13 13.5
14
14.5
13 13.5 14
-- 3 8
P
E
-- 4 0
-- 4 6 -- 4 4
-- 4 8
-- 5 0
-- 5 2
-- 5 4
-- 4 2
AFT18H357--24NR6
13
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
14
RF Device Data
Freescale Semiconductor, Inc.
AFT18H357--24NR6
AFT18H357--24NR6
15
RF Device Data
Freescale Semiconductor, Inc.
16
RF Device Data
Freescale Semiconductor, Inc.
AFT18H357--24NR6
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.freescale.com/rf
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0May 2015 Initial Release of Data Sheet
AFT18H357--24NR6
17
RF Device Data
Freescale Semiconductor, Inc.
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Document Number: AFT18H357--24N
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