NTE5511 thru NTE5513
Silicon Controlled Rectifier (SCR)
5 Amp, TO66
Description:
The NTE5511 thru NTE5513 all−diffused, three junction, silicon controlled rectifiers (SCR’s) are in-
tended for use in power−control and power−switching applications. These devices are available in
a TO66 type package and have a blocking voltage capability of up to 600V and a forward current rating
of 5A (rms value) at a case temperature of +75°C.
Features:
DDesigned Especially for High−Volume Systems
DReadily Adaptable for PC Boards and Metal
Heat Sinks
DLow Switching Losses
DHigh di/dt and dv/dt Capabilities
DShorted Emitter Gate−Cathode Construction
DForward and Reverse Gate Dissipation Ratings
DAll−Diffused Construction Assures Exceptional
Uniformity and Stability of Characteristics
DDirect−Soldered Internal Construction Assures
Exceptional Resistance to Fatigue
DSymmetrical Gate−Cathode Construction Pro-
vides Uniform Current Density, Rapid Electrical
Conduction, and Efficient Heat Dissipation
DAll−Welded Construction and Hermetic Sealing
DLow Leakage Currents, Forward and Reverse
DLow Forward Voltage Drop at High Current
Levels
DLow Thermal Resistance
Absolute Maximum Ratings: (For Operation with Sinusoidal AC Supply Voltage at a Frequency
between 50Hz and 400Hz, and with Resistive or Inductive Load)
Transient Peak Reverse Voltage (Non−Repetitive), VRM (non−rep)
NTE5511 330V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5512 660V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5513 700V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Reverse Voltage (Repetitive), VRM (rep)
NTE5511 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5512 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5513 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Forward Blocking Voltage (Repetitive), VFBOM (rep)
NTE5511 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5512 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5513 700V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average DC Forward Current, IF(av)
(TC = +75°C mounted on heat sink, conduction angle or 180°) 3.2A. . . . . . . . . . . . . . . . . . . .
RMS Forward Current (TC = +75°C mounted on heat sink), IFRMS 5A. . . . . . . . . . . . . . . . . . . . . . . . .
Peak Surge Current (For one cycle of applied voltage), iFM(surge) 60A. . . . . . . . . . . . . . . . . . . . . . . . .
Sub−Cycle Surge (Non−Repetitive, for a period of 1ms to 8.3ms), I2t 15A2sec. . . . . . . . . . . . . . . . . .
Rate of Change of Forward Current (Note 1), di/dt 200A/μs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Power (Peak, Forward, or Reverse, for 10μs duration, Note 2), PGM 13W. . . . . . . . . . . . . . . .
Average Gate Power (Note 2), PGAV 500mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Case Temperature Range, TC−40° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg −40° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. VFB = vBOO(min value), IGT = 200mA, 0.5μs rise time
Note 2. Any values of peak gate current or peak gate voltage to give the maximum gate power is
permissible.
Electrical Characteristics: (At Maximum Ratings, TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Forward Breakover Voltage
NTE5511
vBOO TC = +100°C
200 − − V
NTE5512 400 − − V
NTE5513 600 − − V
Peak Blocking Forward Current
NTE5511
IFBOM VFBO = 200V TC = +100°C−0.10 1.5 mA
NTE5512 VFBO = 400V −0.20 3.0 mA
NTE5513 VFBO = 600V −0.40 4.0 mA
Peak Blocking Reverse Current
NTE5511
IRBOM VRBO = 200V TC = +100°C−0.05 0.75 mA
NTE5512 VRBO = 400V −0.10 1.5 mA
NTE5513 VRBO = 600V −0.20 2.0 mA
Forward Voltage Drop vFIF = 30A −2.15 2.80 V
DC Gate−Trigger Current IGT −8 15 mA
DC Gate−Trigger Voltage VGT −1.2 2.0 V
Holding Current IHold −10 20 mA
Critical Rate of Applied Forward Voltage dv/dt VFB = vBOO (min), exponential rise,
TC = +100°C
10 200 −V/μs
Turn−On Time
(Delay Time + Rise Time)
ton VFB = vBOO (min), iF = 4.5A,
IGT = 200mA, 0.1μs rise time
0.75 1.5 −μs
Turn−Off Time
(Reverse Recovery Time + Gate
Recovery Time)
toff iF = 2A, 50μs pulse width,
dvFB/dt = 20V/μs, dir/dt = 30A/μs,
IGT = 200mA, TC = +75°C
−15 50 μs
Thermal Resistance, Junction−to−Case RΘJC − − 4°C/W
.485 (12.3)
Dia
.062 (1.57)
.295 (7.5)
.360 (9.14)
Min
.031 (0.78) Dia
.960 (24.3) Gate
.580 (14.7)
.200
(5.08)
CathodeAnode/Case
.145 (3.7) R Max
.147 (3.75) Dia
(2 Places)
