T-1 3/4 (5mm) INFRA-RED EMITTING DIODE W53F3C Features Description !MECHANICALLY AND SPECTRALLY MATCHED TO THE W51P3C PHOTOTRANSISTOR. ! WATER CLEAR LENS AVAILABLE HIGH POWER OUTPUT. F3 Made with Gallium Arsenide Infrared Emitting diodes. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the lead emerge package. 4. Specifications are subject to change without notice. SPEC NO: DSAD2231 APPROVED: J. Lu REV NO: V.2 CHECKED: Allen Liu DATE: APR/29/2003 DRAWN: K.ZHANG PAGE: 1 OF 3 Selection Guide P ar t N o . W53F3C Dic e Po (m W/s r ) @20m A *50m A L en s Ty p e GaAs WATER CLEAR Min . Ty p . 7 20 *10 *30 V i ew i n g An g l e 21/2 20 Notes: 1. 1/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value. 2. * Luminous intensity with asterisk is measured at 50mA. Electrical / Optical Characteristics at T)=25C Par am et er P/N Sy m b o l Ty p . Max . Un it Co n d it io n Forward Voltage F3 VF 1.2 1.6 V I F =20mA Reverse Current F3 IR - 10 uA V R =5V Capacitance F3 C 90 - pF V F =0V;f=1MHz Peak Spectral Wavelength F3 P 940 - nm I F =20mA Spectral Bandwidth F3 1/2 50 - nm I F =20mA Absolute Maximum Ratings at T)=25C Par am et er Sy m b o l F3 F3 Un it s Power Dissipation PT 100 mW Forward Current IF 50 mA Peak Forward Current[1] iF S 1.2 A Reverse Voltage VR 5 V Operating Temperature TA -40~ +85 C TS T G -40~ +85 C Storage Temperature 260C For 5 Seconds Lead Solder Temperature[2] Notes: 1. 1/100 Duty Cycle, 10us Pluse Width. 2. 2mm below package base. SPEC NO: DSAD2231 APPROVED: J. Lu REV NO: V.2 CHECKED: Allen Liu DATE: APR/29/2003 DRAWN: K.ZHANG PAGE: 2 OF 3 W53F3C SPEC NO: DSAD2231 APPROVED: J. Lu REV NO: V.2 CHECKED: Allen Liu DATE: APR/29/2003 DRAWN: K.ZHANG PAGE: 3 OF 3