BC859CMTF - FAIRCHILD SEMICONDUCTOR

BC856- BC860 Rev. B

BC856- BC860 PNP Epitaxial Silicon Transistor

August 2006

BC856- BC860

PNP Epitaxial Silicon Transistor

Features

• Switching an d Amplifier Application s

• Suitable for automatic insertion in thick and thin-film circuits

• Low Noise: BC859, BC860

• Complement to BC846 ... BC850

Absolute Maximum Ratings* Ta = 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics* Ta=25°C unless otherwise note d

* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%

Symbol Parameter Value Units

VCBO Collector-Base Voltage

: BC856

: BC857/860

: BC858/859

-80

-50

-30

VCEO Collector-Emitter Voltage

: BC856

: BC857/860

: BC858/859

-65

-45

-30

VEBO Emitter-Base Voltage -5 V

ICCollector Current (DC) -100 mA

PCCollector Power Dissipation 310 mW

TJJunction Temperature 150 °C

TSTG Storage Temperature -65 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units

ICBO Collector Cut-off Current VCB= -30V, IE=0 -15 nA

hFE DC Current Gain VCE= -5V, IC= -2mA 110 800

VCE (sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA

IC= -100mA, IB= -5mA -90

-250 -300

-650 mV

VBE (sat) Base-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA

IC= -100mA, IB= -5mA -700

-900 mV

VBE (on) Base-Emitter On Voltage VCE= -5V, IC= -2mA

VCE= -5V, IC= -10mA -600 -660 -750

-800 mV

fTCurrent Gain Bandwidth Product VCE= -5V, IC= -10mA

f=100MHz 150 MHz

Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 6pF

NF Noise Figure

: BC856/857/858

: BC859/860 VCE= -5V, IC= -200µA

RG=2KΩ, f=1KHz 2

110

4dB

: BC859

: BC860 VCE= -5V, IC= -200µA

RG=2KΩ, f=30~15000Hz 1.2

1.2 4

2dB

1. Base 2. Emitter 3. Collector

SOT-23

2www.fairchildsemi.com

BC856- BC860 Rev. B

BC856- BC860 PNP Epitaxial Silicon Transistor

hFE Classification

Ordering Information

Note1 : Affix “-A,-B,-C” means hFE classification.

Affix “-M” means the matte type package.

Affix “-T F” me a ns the ta pe & reel type pack ing .

Classification A B C

hFE 110 ~ 220 200 ~ 450 420 ~ 800

Device(note1) Device Marking Package Packing Method Qty(pcs) Pin Difinitions

BC856AMTF 9AA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector

BC856BMTF 9AB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector

BC856CMTF 9AC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector

BC857AMTF 9BA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector

BC857BMTF 9BB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector

BC857CMTF 9BC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector

BC858AMTF 9CA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector

BC858BMTF 9CB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector

BC858CMTF 9CC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector

BC859AMTF 9DA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector

BC859BMTF 9DB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector

BC859CMTF 9DC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector

BC860AMTF 9EA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector

BC860BMTF 9EB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector

BC860CMTF 9EC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector

3www.fairchildsemi.com

BC856- BC860 Rev. B

BC856- BC860 PNP Epitaxial Silicon Transistor

Typical Performance Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Base-Emitter Sat uration Voltage

Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage

Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Prod uct

-0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20

-0

-5

-10

-15

-20

-25

-30

-35

-40

-45

-50

IB = - 50µA

IB = - 100µA

IB = - 150µA

IB = - 200µA

IB = - 250µA

IB = - 300µA

IB = - 350µA

IB = - 400µA

IC[mA], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITT ER VOLTAGE

-0.1 -1 -10 -100

100

1000

VCE = - 5V

hFE, DC CURRENT GAIN

IC[mA], COLLE CTOR CURRENT

-0.1 -1 -10 -100

-0.01

-0.1

-1

-10

IC = 10 IB

VCE(sat)

VBE(sat)

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

IC[mA], COLLECTOR CURRENT

-0.2 -0.4 -0.6 -0.8 -1.0 -1.2

-0.1

-1

-10

-100

VCE = - 5V

IC[mA], COLLECTOR CURRENT

VBE[V], BASE-EMITTER VOLTAGE

-1 -10 -100

f=1MHz IE=0

Cob[pF], CAPACITANCE

VCB[V], COLLECTOR-BASE VOLTAGE

-1 -10

100

1000

f=1MH z IE=0

fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT

IC[mA], COLLECTOR CURRENT

4www.fairchildsemi.com

BC856- BC860 Rev. B

BC856- BC860 PNP Epitaxial Silicon Transistor

Mechanical Dimensions

0.96~1.14

0.12

0.03~0.1

0.38 RE

0.40 ±0.03

2.90 ±0.10

0.95 ±0.03 0.95 ±0.03

1.90 ±0.03 0.508REF

0.97REF 1.30 ±0.10 0.45~0.60

2.40 ±0.10

+0.05

–0.02

0.20 MI

0.40 ±0.03

SOT-23

Dimensions in Millimeters

TRADEMARKS

The following are regis tered and unr egister ed tradema rks Fairchild Semiconduc tor owns or is authorized to use an d is not int ended to

be an exhaustive list of all such trademarks.

BC856- BC860 PNP Epitaxial Silicon Transistor

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO

IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OU T OF THE APPLICATION OR USE

OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE

RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPE-

CIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT

THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body, or (b) support or sustain life, or

instructions fo r use provided in the labeling, can be reaso nably expecte d

to result in significant injury to the user.

2. A critical component is any component of a life support device or system

whose failure to perform can be re asonably expected to cause the failure

of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production This datasheet contains prelim inary data, and

supplementary data will be published at a lat er date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identifica tion Needed Full Production This datasheet contains final sp ecifications. Fa irchild

Semiconductor reserves the right to make changes at

any time withou t notice in order to i m prove design.

Obsolete Not In Production This datasheet contains specifications on a produc t

that has been discontinued by Fair child semiconductor.

The datasheet is printed for reference information only.

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BC856- BC860 Rev. B

BC856- BC860 PNP Epitaxial Silicon Transistor