Voidless-Hermetically-Sealed Unidirectional
Transient Suppressors
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright © 2008
6-11-2008 REV C
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6461 thru 1N6468
1N6461 – 1N6468
1N6469 – 1N6476
DESCRIPTION APPEARANCE
This series of industry recognized voidless-hermetically-sealed Unidirectional
Transient Voltage Suppressor (TVS) designs is military qualified to MIL-PRF-
19500/551 and are ideal for high-reliability applications where a failure cannot be
tolerated. They provid e a Working Peak “Standoff” Voltage selection from 5.0 to 51.6
Volts with 500 W ratings. T hey are very robust in hard-glass construction and also use
an internal metallurgical bond identified as Category I for high reliability applications.
The 500 W series is military qualified to MIL-PRF-19500/551. These devices are also
available in a s urface mount MELF packag e configurati on by addi ng a “US” suffix (se e
separate data sheet for 1N6461US thru 1 N6468US). Microsemi also offers numerous
other TVS products to meet higher a nd lower peak pulse po wer and voltage ratings in
both through-hole and surfac e-mount packages.
“E” Package
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES APPLIC ATIONS / BENEFITS
High surge current and peak pulse power provides
transient voltage protection for sensitive circuits
Triple-layer passivation
Internal Category I” metallurgical bonds
Voidless hermetically s ealed glass package
JAN/TX/TXV military qualifications ava ilable per MIL-
PRF-19500/551 by adding JAN, JANTX, or JANTXV
prefix
Further options for screening in accordance with MIL-
PRF-19500 for JANS by using a “SP” prefi x, e.g.
SP6462, SP6468, etc.
Surface Mount equivalents are also available in a
square-end-cap MELF configuration with a “US” suffix
(see separate data sheet)
Military and other high reliability transient protection
Extremely robust construction
Working Peak “Standoff” Voltage (VWM) from 5.0 to
51.6 V
Available as 500 W Peak Puls e Power (PPP)
ESD and EFT protection per IEC61 000-4-2 and
IEC61000-4-4 respectively
Secondary lightning protection per select levels in
IEC61000-4-5
Flexible axial-leaded mo unting terminals
Nonsensitive to ESD per MIL-STD-750 Method
1020
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RAT ING S MECHANICAL AND PACKAGING
Operating & Storage Temperature: -55oC to +175oC
Peak Pulse Power at 25oC: 500 Watts @ 10/1000 µs
(also see Figures 1,2 and 4)
Impulse repetition rate (duty factor): 0.01%
Forward Surge Current: 80 Amps@ 8.33 ms one-half
sine wave
Forward Voltage: 1.5 V @ 1 Amp dc and 4.8 V at 100
Amps (pulsed)
Steady-State Power: 2.5 Watts @ TA = 25oC (see
note below and Figure 4)
Thermal Resistance @ 3/8 inch lead length: 60 oC/W
Solder Temperatures: 260oC for 10 s (maximum)
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: Axial-le ads are Tin/Lead (Sn/Pb)
over copper
MARKING: Body painted and part number, etc.
POLARITY: Cathode band
Tape & Reel option: Standard per EIA-296
Weight: 750 mg
See package dimensions on l ast page
NOTE: Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from
mounting point to ambient is sufficiently cont rolled where TJ(MAX) is not exceeded.
Voidless-Hermetically-Sealed Unidirectional
Transient Suppressors
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6461 thru 1N6468
1N6461 – 1N6468
1N6469 – 1N6476
ELECTRICAL CHARACTERISTICS
TYPE
BREAK
DOWN
VOLTAGE
V(BR)
MIN.
BREAKDOWN
CURRENT
I (BR)
WORKING
PEAK
VOLTAGE
VWM
MAX
LEAKAGE
CURRENT
ID
MAXIMUM
CLAMPING
VOLTAGE
VC
@ 10/1000 µs
MAXIMUM
PEAK PULSE
CURRENT
IPP
@8/20 µs @10/1000 µs
MAXIMUM
TEMP.
COEF. OF
V(BR)
Volts mAdc Vdc μAdc V(pk) A(pk) A(pk) %/oC
1N6461 5.6 25 5 3000 9.0 315 56 -.03, +0.04
1N6462 6.5 20 6 2500 11.0 258 46 0.06
1N6463 13.6 5 12 500 22.6 125 22 0.085
1N6464 16.4 5 15 500 26.5 107 19 0.085
1N6465 27.0 2 24 50 41.4 69 12 .096
1N6466 33.0 1 30.5 3 47.5 63 11 .098
1N6467 43.7 1 40.3 2 63.5 45 8 .101
1N6468 54.0 1 51.6 2 78.5 35 6 .103
SYMBOLS & DEFINITI ONS
Symbol Definition
VBR Minimum Breakdown Voltage: The minimu m voltage the device will exhibit at a specified current.
VWM Working Peak Voltage: The maximum peak voltage that can be applied over the operating temperature range.
This is also referred to as Standoff Voltage.
ID Maximum Standoff Current: The maximum current that will flow at the specified voltage and temperature.
VC Maximum clamping voltage at specified IPP (Peak Pulse Current) at the specified pulse conditi ons.
PPP Peak Pulse Power: The peak power dissipation resulting from the peak impulse current IPP.
GRAPHS
FIGURE 1 FIGURE 2
PEAK PULSE POWER vs. PULSE TIME 10/1000 µs CURRENT IMPULSE WAVEFORM
Microsemi
Scottsdale Division Page 2
Copyright © 2008
6-11-2008 REV C
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Voidless-Hermetically-Sealed Unidirectional
Transient Suppressors
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6461 thru 1N6468
1N6461 – 1N6468
1N6469 – 1N6476
Peak Pulse Power (Ppp), Current (Ipp),
And DC Power in Percent of 25oC Ratin
g
FIGURE 3 T – Temperature – oC
8/20 µs CURRENT IMPULSE WAVEFORM
(per MIL-PRF-19500/551 FIGURE 4
DERATING CURVE
PACKAGE DIMENSIONS Inches [mm]
Lead Tolerance = + .002 -. 003 in
*Includ es sections of the lead or fillet over which the lead diameter is uncontrolled.
Microsemi
Scottsdale Division Page 3
Copyright © 2008
6-11-2008 REV C 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503