1. Product profile
1.1 General description
PNP general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device
(SMD) plastic package.
NPN complement: 2PD601ART.
1.2 Features
nGeneral-purpose transistor
nSmall SMD plastic package
1.3 Applications
nGeneral-purpose switching and amplification
1.4 Quick reference data
2. Pinning information
2PB709ART
45 V, 100 mA PNP general-purpose transistor
Rev. 01 — 19 March 2007 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 45 V
ICcollector current - - 100 mA
hFE DC current gain VCE =10 V;
IC=2mA 210 - 340
Table 2. Pinning
Pin Description Simplified outline Symbol
1 base
2 emitter
3 collector
12
3
sym013
3
2
1
2PB709ART_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 19 March 2007 2 of 10
NXP Semiconductors 2PB709ART
45 V, 100 mA PNP general-purpose transistor
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Table 3. Ordering information
Type number Package
Name Description Version
2PB709ART - plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
Type number Marking code[1]
2PB709ART C5*
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 45 V
VCEO collector-emitter voltage open base - 45 V
VEBO emitter-base voltage open collector - 6V
ICcollector current - 100 mA
ICM peak collector current single pulse;
tp1ms -200 mA
IBM peak base current single pulse;
tp1ms -100 mA
Ptot total power dissipation Tamb 25 °C[1] - 250 mW
Tjjunction temperature - 150 °C
Tamb ambient temperature 65 +150 °C
Tstg storage temperature 65 +150 °C
2PB709ART_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 19 March 2007 3 of 10
NXP Semiconductors 2PB709ART
45 V, 100 mA PNP general-purpose transistor
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
FR4 PCB, standard footprint
Fig 1. Power derating curve
Tamb (°C)
75 17512525 7525
006aaa990
100
200
300
Ptot
(mW)
0
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air [1] - - 500 K/W
Rth(j-sp) thermal resistance from
junction to solder point - - 140 K/W
2PB709ART_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 19 March 2007 4 of 10
NXP Semiconductors 2PB709ART
45 V, 100 mA PNP general-purpose transistor
7. Characteristics
[1] Pulse test: tp300 µs; δ≤0.02.
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for
SOT23 (TO-236AB); typical values
006aaa991
10510102
104102
101tp (s)
103103
1
102
10
103
Zth(j-a)
(K/W)
1
0.75
0.50
0.33
0.20
0.01
0.10
0.05
0.02
0
δ = 1
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-basecut-off
current VCB =45 V; IE=0A - - 10 nA
VCB =45 V; IE=0A;
Tj= 150 °C--5µA
IEBO emitter-base cut-off
current VEB =5 V; IC=0A - - 10 nA
hFE DC current gain VCE =10 V;
IC=2mA 210 - 340
VCEsat collector-emitter
saturation voltage IC=100 mA;
IB=10 mA [1] --500 mV
fTtransition frequency VCE =10 V;
IC=1 mA;
f = 100 MHz
70 - - MHz
Cccollector capacitance VCB =10 V;
IE=i
e=0A;
f=1MHz
--5pF
2PB709ART_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 19 March 2007 5 of 10
NXP Semiconductors 2PB709ART
45 V, 100 mA PNP general-purpose transistor
VCE =10 V
(1) Tamb = 150 °C
(2) Tamb =25°C
(3) Tamb =55 °C
Tamb =25°C
Fig 3. DC current gain as a function of collector
current; typical values Fig 4. Collector current as a function of
collector-emitter voltage; typical values
IC/IB=10
(1) Tamb =55 °C
(2) Tamb =25°C
(3) Tamb = 150 °C
IC/IB=10
(1) Tamb = 150 °C
(2) Tamb =25°C
(3) Tamb =55 °C
Fig 5. Base-emitter saturation voltage as a function of
collector current; typical values Fig 6. Collector-emitter saturation voltage as a
function of collector current; typical values
IC (mA)
101102
101
006aab028
200
300
100
400
500
hFE
0
(1)
(2)
(3)
VCE (V)
0108462
006aab029
0.04
0.06
0.02
0.08
0.1
IC
(A)
0
IB (mA) = 0.75 0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.65
0.55
0.45
0.35
0.25
0.15
0.05
006aab030
0.5
0.9
1.3
VBEsat
(V)
0.1
IC (mA)
101102
101
(1)
(2)
(3)
006aab031
IC (mA)
101102
101
101
1
VCEsat
(V)
102
(1)
(2)
(3)
2PB709ART_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 19 March 2007 6 of 10
NXP Semiconductors 2PB709ART
45 V, 100 mA PNP general-purpose transistor
8. Package outline
9. Packing information
[1] For further information and the availability of packing methods, see Section 13.
Fig 7. Package outline SOT23 (TO-236AB)
04-11-04Dimensions in mm
0.45
0.15
1.9
1.1
0.9
3.0
2.8
2.5
2.1 1.4
1.2
0.48
0.38 0.15
0.09
12
3
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 10000
2PB709ART SOT23 4 mm pitch, 8 mm tape and reel -215 -235
2PB709ART_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 19 March 2007 7 of 10
NXP Semiconductors 2PB709ART
45 V, 100 mA PNP general-purpose transistor
10. Soldering
Fig 8. Reflow soldering footprint SOT23 (TO-236AB)
Fig 9. Wave soldering footprint SOT23 (TO-236AB)
solder resist
occupied area
solder lands
solder paste
Dimensions in mm
sot023
1.00
0.60
(3x)
1.30
12
3
2.50
3.00
0.85
2.70
2.90
0.50 (3x)
0.60 (3x)
3.30
0.85
sot023
4.004.60
2.80
4.50
1.20
3.40
3
21
1.20 (2x)
preferred transport direction during soldering
Dimensions in mm
solder resist
occupied area
solder lands
2PB709ART_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 19 March 2007 8 of 10
NXP Semiconductors 2PB709ART
45 V, 100 mA PNP general-purpose transistor
11. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
2PB709ART_1 20070319 Product data sheet - -
2PB709ART_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 19 March 2007 9 of 10
NXP Semiconductors 2PB709ART
45 V, 100 mA PNP general-purpose transistor
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors 2PB709ART
45 V, 100 mA PNP general-purpose transistor
© NXP B.V. 2007. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 19 March 2007
Document identifier: 2PB709ART_1
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
9 Packing information. . . . . . . . . . . . . . . . . . . . . . 6
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
13 Contact information. . . . . . . . . . . . . . . . . . . . . . 9
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10