1N4446
Small Signal Diode
Features:
DDO−35 Package
Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified)
Max. Repetitive Reverse Voltage,VRRM 100V..............................................
Power Dissipation, PD500mW..........................................................
Average Rectified Forward Current, IF(AV) 200mA..........................................
None−Repetitive Forward Surge Current, IFSM
Pulse Width = 10.0 seconds 1.0A..................................................
Pulse Width = 1.0 microsecond 4.0A...............................................
Operating Junction Temperature, TJ175C................................................
Storage Temperature Range, Tstg −65 to +200C..........................................
Thermal Resistance, Junction to Ambient, RthJA +300C/W..................................
Note 1. These ratings are limiting values above which the serviceability of the device may be im-
paired.
Note 2. These ratings are based on a maximum junction temperature of +200C.
Note 3. These are steady state limits.
Electrical Characteristics: (TA = +25C, unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Breakdown Voltage VRIR = 100A 100 − − V
Forward Voltage VFIF = 20mA − − 1.0 V
Reverse Current IRVR = 20V − − 25 nA
VR = 20V, TA = +150C− − 50 A
Total Capacitance CTVR = 0, f = 1MHz − − 4 pF
Reverse Recovery Time trr IF = 10mA, VR = 6V, Irr = 1mA,
RL = 100
− − 4 nS
Color Band Denotes Cathode
1.000
(25.4)
Min
.300
(7.62)
Max
.107 (2.71)
Dia Max
.018 (.457) Dia Max
