PD - 94507 IRF7488 HEXFET(R) Power MOSFET Applications l High frequency DC-DC converters Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS 80V RDS(on) max 29mW@VGS=10V 1 8 S 2 7 S 3 6 4 5 S G Qg 38nC A A D D D D SO-8 Top View Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. Units 80 20 6.3 5.0 50 2.5 1.6 20 -55 to + 150 V A W mW/C C 300 (1.6mm from case ) Thermal Resistance Symbol RJL RJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. Max. Units --- --- 20 50 C/W Notes through are on page 9 www.irf.com 1 9/23/02 IRF7488 Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 80 --- --- 2.0 --- --- --- --- Typ. --- 0.089 24 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 29 m VGS = 10V, ID = 3.8A 4.0 V VDS = VGS, ID = 250A 20 VDS = 80V, VGS = 0V A 250 VDS = 64V, VGS = 0V, TJ = 125C 200 VGS = 20V nA -200 VGS = -20V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 9.3 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 38 9.1 12 13 12 44 16 1680 270 32 1760 170 340 Max. Units Conditions --- S VDS = 15V, ID = 3.8A 57 ID = 3.8A nC VDS = 40V VGS = 10V, --- VDD = 40V --- I D = 3.8A ns --- RG = 9.1 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 64V, = 1.0MHz --- VGS = 0V, VDS = 0V to 64V Avalanche Characteristics Parameter EAS IAR Single Pulse Avalanche Energy Avalanche Current Typ. Max. Units --- --- 96 3.8 mJ A Diode Characteristics IS ISM VSD trr Qrr 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- 2.3 --- --- 50 --- --- --- --- 65 190 1.3 98 290 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 3.8A, VGS = 0V TJ = 25C, IF = 3.8A di/dt = 100A/s D S www.irf.com IRF7488 100 100 VGS 1 15V 12V 10V 6.0V 5.5V 5.0V 4.5V BOTTOM 4.0V ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 10 0.1 4.0V 0.01 20s PULSE WIDTH Tj = 25C 0.001 0.1 1 10 10 4.0V 1 20s PULSE WIDTH Tj = 150C 0.1 0.1 100 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.5 T J = 150C 10.00 1.00 T J = 25C 0.10 VDS = 25V 20s PULSE WIDTH 0.01 4.0 5.0 6.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com ID = 6.3A VGS = 10V 2.0 (Normalized) RDS(on) , Drain-to-Source On Resistance 100.00 ID, Drain-to-Source Current () VGS 15V 12V 10V 6.0V 5.5V 5.0V 4.5V BOTTOM 4.0V TOP TOP 1.5 1.0 0.5 7.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7488 20 100000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd C, Capacitance (pF) VGS , Gate-to-Source Voltage (V) Coss 10000 ID= 3.8A = Cds + Cgd Ciss 1000 Coss Crss 100 VDS= 64V VDS= 40V VDS= 16V 16 12 8 4 0 10 0 1 10 100 30 40 50 60 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 ID, Drain-to-Source Current (A) 100.0 ISD, Reverse Drain Current (A) 20 Q G Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) T J = 150C OPERATION IN THIS AREA LIMITED BY RDS(on) 100 10.0 1.0 T J = 25C 10 100sec 1msec 1 VGS = 0V 0.1 0.1 0.4 0.6 0.8 1.0 VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 10 1.2 Tc = 25C Tj = 150C Single Pulse 1 10msec 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7488 7 VDS 6 ID , Drain Current (A) VGS 5 RD D.U.T. RG + -V DD 4 10V 3 Pulse Width 1 s Duty Factor 0.1 % 2 Fig 10a. Switching Time Test Circuit 1 VDS 0 90% 25 50 75 100 125 150 T C , Case Temperature (C) 10% VGS Fig 9. Maximum Drain Current Vs. Ambient Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 100 Thermal Response ( Z thJC ) D = 0.50 0.20 0.10 0.05 10 0.02 1 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.1 0.01 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 0.036 RDS(on) , Drain-to -Source On Resistance ( ) RDS ( on) , Drain-to-Source On Resistance ( ) IRF7488 0.034 0.032 0.030 0.028 VGS= 10V 0.026 0.024 0.022 0 20 40 60 0.05 0.04 0.03 ID = 3.8A 0.02 80 4.0 ID , Drain Current (A) 8.0 12.0 16.0 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. QG VGS .2F QGS .3F D.U.T. + V - DS QGD 240 VG EAS, Single Pulse Avalanche Energy (mJ) 50K 12V VGS 3mA Charge IG ID Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 15V V(BR)DSS tp L VDS DRIVER ID 1.7A 3.0A BOTTOM 3.8A TOP 200 160 120 80 40 0 D.U.T RG IAS 20V I AS tp + V - DD 0.01 Fig 15a&b. Unclamped Inductive Test circuit and Waveforms 6 25 50 75 100 125 150 A Starting TJ , Junction Temperature (C) Fig 15c. Maximum Avalanche Energy Vs. Drain Current www.irf.com IRF7488 D.U.T Driver Gate Drive + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer D= Period P.W. + + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 17. Gate Charge Waveform www.irf.com 7 IRF7488 SO-8 Package Details D DIM B 5 A 8 7 6 6 H E 0.25 [.010] 1 2 3 A 4 MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BAS IC e1 6X e e1 C 1.27 BASIC .025 BAS IC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 y 0.10 [.004] 0.25 [.010] MAX K x 45 A A1 8X b MILLIMET ERS MAX A 5 INCHES MIN 8X L 8X c 7 C A B FOOT PRINT NOTES: 1. DIMENSIONING & T OLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE S HOWN IN MILLIMET ERS [INCHES]. 4. OUT LINE CONF ORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS . MOLD PROTRUSIONS NOT T O EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS . MOLD PROTRUSIONS NOT T O EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENSION IS THE LENGTH OF LEAD F OR SOLDERING TO A S UBS TRATE. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: THIS IS AN IRF7101 (MOSFET) INTERNAT IONAL RECTIFIER LOGO 8 YWW XXXX F7101 DAT E CODE (YWW) Y = LAST DIGIT OF T HE YEAR WW = WEEK LOT CODE PART NUMBER www.irf.com IRF7488 SO-8 Tape and Reel TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes: Repetitive rating; pulse width limited by max. junction temperature. When mounted on 1 inch square copper board Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Starting TJ = 25C, L = 13mH RG = 25, IAS = 3.8A. Pulse width 300s; duty cycle 2%. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.9/02 www.irf.com 9