Symbol Parameter Max. Units
VDS Drain-Source Voltage 80 V
VGS Gate-to-Source Voltage ± 20
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 6.3
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 5.0 A
IDM Pulsed Drain Current50
PD @TA = 25°C Maximum Power Dissipation 2.5 W
PD @TA = 70°C Maximum Power Dissipation 1.6
Linear Derating Factor 20 mW/°C
TJOperating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
www.irf.com 1
9/23/02
Symbol Parameter Typ. Max. Units
RθJL Junction-to-Drain Lead –– – 20
RθJA Junction-to-Ambient ––– 50 °C/W
Thermal Resistance
SO-8
Top View
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
S
A
IRF7488
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
80V 29mW@VGS=10V 38nC
Notes through are on page 9
PD - 94507
Absolute Maximum Ratings
lHigh frequency DC-DC converters
Benefits
Applications
lLow Gate-to-Drain Charge to Reduce
Switching Losses
lFully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
lFully Characterized Avalanche Voltage
and Current
IRF7488
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 9.3 ––– ––– S VDS = 15V, ID = 3.8A
QgTotal Gate Charge –– – 38 57 I D = 3.8A
Qgs Gate-to-Source Charge – –– 9.1 nC VDS = 40V
Qgd Gate-to-Drain ("Miller") Charge ––– 12 VGS = 10V,
td(on) Turn-On Delay Time ––– 13 ––– VDD = 40V
trRise Time ––– 12 ––– ID = 3.8A
td(off) Turn-Off Delay Time ––– 44 ––– RG = 9.1Ω
tfFall Time ––– 16 ––– VGS = 10V
Ciss Input Capacitance –– – 1680 ––– VGS = 0V
Coss Output Capacitance ––– 270 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 32 ––– pF ƒ = 1.0MHz
Coss Output Capacitance ––– 1760 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 170 ––– VGS = 0V, VDS = 64V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 340 ––– VGS = 0V, VDS = 0V to 64V
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy––– 96 mJ
IAR Avalanche Current––– 3.8 A
Avalanche Characteristics
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– –– – 1.3 V TJ = 25°C, IS = 3.8A, VGS = 0V
trr Reverse Recovery Time ––– 65 98 ns TJ = 25°C, IF = 3.8A
Qrr Reverse RecoveryCharge ––– 1 90 290 nC di/dt = 100A/µs
Diode Characteristics
2.3
50
A
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 80 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.089 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance –– – 24 29 mΩVGS = 10V, ID = 3.8A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
––– ––– 20 µA VDS = 80V, VGS = 0V
––– ––– 250 VDS = 64V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -20V
IGSS
IDSS Drain-to-Source Leakage Current
IRF7488
www.irf.com 3
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
100
ID, Drain-to-Source Current (A)
4.0V
20µs P ULSE WI DTH
Tj = 25°C
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
4.0V
20µs P ULSE WI DTH
Tj = 150°C
4.0 5.0 6.0 7.0
VGS, Gate-to-Source Vo ltage (V)
0.01
0.10
1.00
10.00
100.00
ID, Drain-to-Source Current (Α)
TJ = 25°C
TJ = 150°C
VDS = 25V
20µs PULS E WIDTH
VGS
TOP 15V
12V
10V
6.0V
5.5V
5.0V
4.5V
BOTTOM 4.0V
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junct ion Temperature ( °C )
0.5
1.0
1.5
2.0
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 6.3A
VGS = 10V
VGS
TOP 15V
12V
10V
6.0V
5.5V
5.0V
4.5V
BOTTOM 4.0V
IRF7488
4www.irf.com
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage Fig 8. Maximum Safe Operating Area
110 100
VDS, Drai n-to-Source V oltage (V)
10
100
1000
10000
100000
C, Capacitance (pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ci ss = C
gs + C
gd, Cds SHORTED
Crss = C
gd
Cos s = C
ds + C
gd
0 102030405060
QG Total Gate Charge (nC)
0
4
8
12
16
20
VGS, Gate-to-Source Voltage (V)
VDS= 6 4V
VDS= 40V
VDS= 16V
ID= 3.8A
0.4 0.6 0.8 1.0 1.2
VSD, Sourc e-toDrain V oltage (V)
0.1
1.0
10.0
100.0
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
1 10 100 1000
VDS , Drain-toSource V oltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25° C
Tj = 150°C
Single Pul se
1msec
10msec
OPERATION IN THIS A REA
LIMITED BY RDS(on)
100µsec
IRF7488
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
1E-005 0.0001 0.001 0.01 0.1 110 100
t1 , R ectangular Pulse Duration (sec)
0.01
0.1
1
10
100
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PU LSE
( THERMAL RESPONSE )
25 50 75 100 125 150
TC , Case Temperature (° C)
0
1
2
3
4
5
6
7
ID , Drain Current (A)
IRF7488
6www.irf.com
Fig 13. On-Resistance Vs. Gate Voltage
Fig 12. On-Resistance Vs. Drain Current
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
VGS
Q
G
Q
GS
Q
GD
V
G
Charge
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150
Starting T J, Junction Temperature (°C)
0
40
80
120
160
200
240
EAS, Single Pulse Avalanche Energy (mJ)
I D
TOP
1.7A
3.0A
BOTTOM
3.8A
020 40 60 80
ID , Drain Current (A)
0.022
0.024
0.026
0.028
0.030
0.032
0.034
0.036
RDS ( on) , Drain-to-Source On Resistance ( Ω)
VGS= 10V
4.0 8.0 12.0 16.0
VGS, Gat e -to -Source Voltage ( V)
0.02
0.03
0.04
0.05
RDS(on), Drain-to -Source On Resistance (Ω)
ID = 3.8A
IRF7488
www.irf.com 7
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Fig 17. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
IRF7488
8www.irf.com
SO-8 Package Details
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
INTERNATIONAL
RECTIFIER
LOGO
F7101
YWW
XXXX
PART NUMBER
LOT CODE
WW = WEEK
Y = LAST DIGIT OF THE YEAR
DATE CODE (YWW)
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX MIL LIME T E RSINCHES MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] CAB
e1 A
A1
8X b
C
0.10 [.004]
4312
FOOT PRINT
8X 0. 72 [.02 8]
6.46 [.255]
3X 1.27 [.050]
4. OUT LINE CONF ORMS T O JEDEC OUT LINE MS -012AA.
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y 14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSION S.
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSION S.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
8X 1.78 [.07
0]
IRF7488
www.irf.com 9
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Starting TJ = 25°C, L = 13mH
RG = 25Ω, IAS = 3.8A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. O UT LIN E C ONFO RMS TO EIA-481 & EIA-541.
FE ED DIRECT ION
T ERMINAL NUM BER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.9/02
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
