StrongIRFET™
IRF200B211
HEXFET® Power MOSFET
D
S
G
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
DC/DC and AC/DC converters
DC/AC Inverters
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free*RoHS Compliant, Halogen-Free
VDSS 200V
RDS(on) typ. 135m
max 170m
ID (Silicon Limited) 12A
Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature
TO-220AB
IRF200B211
S
D
G
G D S
Gate Drain Source
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
IRF200B211 TO-220 Tube 50 IRF200B211
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
100
150
200
250
300
350
400
450
500
RDS(on), Drain-to -Source On Resistance (m)
ID = 7.2A
TJ = 25°C
TJ = 125°C
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
2
4
6
8
10
12
14
ID, Drain Current (A)
1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 31, 2015