Advance Technical Information IXFA7N60P3 IXFP7N60P3 Polar3 TM HiPerFETTM Power MOSFETs VDSS ID25 RDS(on) = 600V = 7A 1.15 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXFA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 7 A IDM TC = 25C, Pulse Width Limited by TJM 16 A IA TC = 25C 3.5 A EAS TC = 25C 400 mJ dv/dt IS IDM, VDD VDSS, TJ 150C 35 V/ns PD TC = 25C 180 W S -55 ... +150 C TJM 150 C Tstg -55 ... +150 C TJ D (Tab) TO-220AB (IXFP) G G = Gate S = Source z 1.6mm (0.062) from Case for 10s 300 C z TSOLD Plastic Body for 10s 260 C z Md Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in. Weight TO-263 TO-220 2.5 3.0 g g z z z z BVDSS VGS = 0V, ID = 1mA 600 VGS(th) VDS = VGS, ID = 1mA 3.0 IGSS VGS = 30V, VDS = 0V 100 nA IDSS VDS = VDSS, VGS = 0V 10 A 125 A RDS(on) VGS = 10V, ID = 0.5 * ID25, Note 1 z V z TJ = 125C (c) 2011 IXYS CORPORATION, All Rights Reserved 1.15 International Standard Packages Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance High Power Density Easy to Mount Space Savings Applications V 5.0 D = Drain Tab = Drain Advantages z Characteristic Values Min. Typ. Max. D (Tab) Features TL Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) DS z z z Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS100428(12/11) IXFA7N60P3 IXFP7N60P3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 20V, ID = 0.5 * ID25, Note 1 4 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 10 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd 7 S 6.0 705 pF 84 pF 4.5 pF 13 ns 12 ns 27 ns 10 ns 13.3 nC 3.7 nC 5.1 nC 1. Gate 2. Drain 3. Source 4. Drain Bottom Side 0.69 C/W RthJC RthCS TO-263 Outline TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V, Note1 ISM Characteristic Values Min. Typ. Max 7 A Repetitive, Pulse Width Limited by TJM 28 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 7A, -di/dt = 25A/s 250 ns C A 0.36 2.60 VR = 100V TO-220 Outline Note 1. Pulse test, t 300s, duty cycle, d 2%. Pins: 1 - Gate 3 - Source 2 - Drain ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA7N60P3 IXFP7N60P3 Fig. 2. Extended Output Characteristics @ T J = 25C Fig. 1. Output Characteristics @ T J = 25C 7 VGS = 10V 8V 14 VGS = 10V 8V 6 7V 12 7V 5 ID - Amperes ID - Amperes 10 4 6V 3 2 8 6 6V 4 1 2 5V 5V 0 0 0 1 2 3 4 5 6 7 8 9 0 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 3.5A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125C 7 3.4 VGS = 10V 7V 6 VGS = 10V 3.0 6V R DS(on) - Normalized 5 ID - Amperes 20 VDS - Volts VDS - Volts 4 3 2 5V 2.6 I D = 7A 2.2 I D = 3.5A 1.8 1.4 1.0 1 0.6 4V 0 0.2 0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 3.5A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 8 3.4 VGS = 10V 3.0 7 TJ = 125C ID - Amperes R DS(on) - Normalized 6 2.6 2.2 TJ = 25C 1.8 1.4 5 4 3 2 1.0 1 0.6 0 0 2 4 6 8 10 ID - Amperes (c) 2011 IXYS CORPORATION, All Rights Reserved 12 14 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFA7N60P3 IXFP7N60P3 Fig. 7. Input Admittance Fig. 8. Transconductance 14 9 TJ = - 40C 8 12 7 10 g f s - Siemens ID - Amperes 6 5 4 TJ = 125C 3 25C 8 125C 6 25C 4 - 40C 2 2 1 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 1 2 3 4 5 6 7 8 9 10 ID - Amperes VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 20 10 18 9 VDS = 300V 16 8 14 7 12 6 VGS - Volts IS - Amperes I D = 3.5A 10 8 TJ = 125C 6 I G = 10mA 5 4 3 TJ = 25C 4 2 2 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 2 VSD - Volts 4 6 8 10 12 14 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 100 Ciss 1,000 RDS(on) Limit 10 25s ID - Amperes Capacitance - PicoFarads f = 1 MHz 100 Coss 100s 1 10 TJ = 150C TC = 25C Single Pulse Crss 1 1ms 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFA7N60P3 IXFP7N60P3 Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - C / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second (c) 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_7N60P3(K3)12-08-11