© 2011 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 600 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ600 V
VGSS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C7A
IDM TC= 25°C, Pulse Width Limited by TJM 16 A
IATC= 25°C 3.5 A
EAS TC= 25°C 400 mJ
dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 35 V/ns
PDTC= 25°C 180 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-220) 1.13 / 10 Nm/lb.in.
Weight TO-263 2.5 g
TO-220 3.0 g
DS100428(12/11)
Polar3 TM HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXFA7N60P3
IXFP7N60P3
VDSS = 600V
ID25 = 7A
RDS(on) ≤≤
≤≤
≤ 1.15ΩΩ
ΩΩ
Ω
Features
zInternational Standard Packages
zFast Intrinsic Rectifier
zAvalanche Rated
zLow RDS(ON) and QG
zLow Package Inductance
Advantages
zHigh Power Density
zEasy to Mount
zSpace Savings
Applications
zSwitch-Mode and Resonant-Mode
Power Supplies
zDC-DC Converters
zLaser Drivers
zAC and DC Motor Drives
zRobotics and Servo Controls
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 600 V
VGS(th) VDS = VGS, ID = 1mA 3.0 5.0 V
IGSS VGS = ±30V, VDS = 0V ±100 nA
IDSS VDS = VDSS, VGS = 0V 10 μA
TJ = 125°C 125 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 1.15 Ω
Advance Technical Information
G = Gate D = Drain
S = Source Tab = Drain
GDS
TO-220AB (IXFP)
D (Tab)
TO-263 AA (IXFA)
G
S
D (Tab)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA7N60P3
IXFP7N60P3
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 4 7 S
RGi Gate Input Resistance 6.0 Ω
Ciss 705 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 84 pF
Crss 4.5 pF
td(on) 13 ns
tr 12 ns
td(off) 27 ns
tf 10 ns
Qg(on) 13.3 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 3.7 nC
Qgd 5.1 nC
RthJC 0.69 °C/W
RthCS TO-220 0.50 °C/W
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10Ω (External)
TO-263 Outline
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max
ISVGS = 0V, Note1 7 A
ISM Repetitive, Pulse Width Limited by TJM 28 A
VSD IF = IS, VGS = 0V, Note 1 1.4 V
trr 250 ns
QRM 0.36 μC
IRM 2.60 A
IF = 7A, -di/dt = 25A/μs
VR = 100V
Pins: 1 - Gate 2 - Drain
3 - Source
TO-220 Outline
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
© 2011 IXYS CORPORATION, All Rights Reserved
IXFA7N60P3
IXFP7N60P3
Fi g. 1. Ou tpu t C har ac ter i sti cs @ T
J
= 25ºC
0
1
2
3
4
5
6
7
0123456789
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
5
V
6
V
7
V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
2
4
6
8
10
12
14
0 5 10 15 20 25 30
V
DS
- Vo lts
I
D
- Ampere s
V
GS
= 10V
8V
6
V
5
V
7
V
Fi g . 3. Ou tpu t C har ac ter i sti cs @ T
J
= 125º C
0
1
2
3
4
5
6
7
0 2 4 6 8 10 12 14 16 18 20
V
DS
- Volts
I
D
- Amperes
4
V
6V
5V
V
GS
= 10V
7V
Fig. 4. R
DS(on)
No r mali zed to I
D
= 3.5A Valu e vs.
Junction T emperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
-50 -25 0 25 50 75 100 125 150
T
J
- Deg re es Centigrad e
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 7A
I
D
= 3.5A
Fig. 5. R
DS(on)
Normalized to I
D
= 3. 5A Valu e vs.
Drain Current
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
02468101214
I
D
- Amp e res
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fi g. 6. Maximu m Dr ai n C u rr en t vs.
Case Temper atu r e
0
1
2
3
4
5
6
7
8
-50-250 255075100125150
T
C
- Degrees Centigrade
I
D
- Amper es
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA7N60P3
IXFP7N60P3
Fi g . 7. I n p u t Admi ttance
0
1
2
3
4
5
6
7
8
9
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
V
GS
- V olts
I
D
- Amperes
T
J
= 1 25ºC
- 40ºC
25ºC
Fig. 8. T ransconductance
0
2
4
6
8
10
12
14
012345678910
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
2
4
6
8
10
12
14
16
18
20
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
SD
- V olts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25 ºC
Fig. 10. Gate C harge
0
1
2
3
4
5
6
7
8
9
10
02468101214
Q
G
- Nan oCoul o mb s
V
GS
- Volt s
V
DS
= 300V
I
D
= 3.5A
I
G
= 10mA
Fig. 11. Capacitance
1
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- V olts
Capacit a nce - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. F o rwar d -Bi as Safe Oper ati ng Area
0.1
1
10
100
10 100 1,000
V
DS
- V olts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
100µs
1ms
R
DS(on)
Limit
25µs
© 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_7N60P3(K3)12-08-11
IXFA7N60P3
IXFP7N60P3
Fi g. 13. Maxi mum Transi en t Th er mal I mped a n ce
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- ºC / W
