AONR21307
Symbol Min Typ Max Units
BV
DSS
-30 V
V
DS
=-30V, V
GS
=0V -1
T
J
=55°C -5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage -1.3 -1.8 -2.3 V
9.2 11
T
J
=125°C 12.7 15.2
14.7 18.5 mΩ
g
FS
43 S
V
SD
-0.7 -1 V
I
S
-24 A
C
iss
1995 pF
C
oss
300 pF
C
rss
260 pF
R
g
4.5 9 Ω
Q
g
(10V) 35 50 nC
Q
g
(4.5V) 17 25 nC
Q
gs
5.7 nC
Q
gd
8.8 nC
t
D(on)
11 ns
t
r
7.5 ns
t
D(off)
43.5 ns
t
f
17.5 ns
t
rr
13.3 ns
Q
rr
20 nC
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=-15V, f=1MHz
V
DS
=V
GS,
I
D
=-250µA
Output Capacitance
Forward Transconductance
I
S
=-1A, V
GS
=0V
V
DS
=-5V, I
D
=-17A
V
GS
=-10V, I
D
=-17A
V
DS
=0V, V
GS
=±25V
Maximum Body-Diode Continuous Current
G
Input Capacitance
Gate-Body leakage current
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
I
F
=-17A, di/dt=500A/µs
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=-10V, V
DS
=-15V, R
L
=0.9Ω,
R
GEN
=3Ω
Diode Forward Voltage
DYNAMIC PARAMETERS
V
GS
=-4.5V, I
D
=-13A
I
F
=-17A, di/dt=500A/µs
Turn-On Rise Time
Gate Source Charge
Gate Drain Charge
Total Gate Charge
SWITCHING PARAMETERS
Turn-On DelayTime
mΩ
V
GS
=-10V, V
DS
=-15V, I
D
=-17A
Total Gate Charge
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Gate resistance f=1MHz
I
DSS
µAZero Gate Voltage Drain Current
Drain-Source Breakdown Voltage I
D
=-250µA, V
GS
=0V
R
DS(ON)
Static Drain-Source On-Resistance
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev.1.0: September 2017 www.aosmd.com Page 2 of 6