2N7000 Preferred Device Small Signal MOSFET 200 mAmps, 60 Volts N-Channel TO-92 Features http://onsemi.com *AEC Qualified *PPAP Capable *Pb-Free Packages are Available* 200 mAMPS 60 VOLTS RDS(on) = 5 W N-Channel MAXIMUM RATINGS Rating D Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 Vdc Gate-Source Voltage - Continuous - Non-repetitive (tp 50 ms) VGS VGSM 20 40 Vdc Vpk ID 200 500 Drain Current - Continuous - Pulsed S mAdc IDM Total Power Dissipation @ TC = 25C Derate above 25C PD 350 2.8 mW mW/C Operating and Storage Temperature Range TJ, Tstg -55 to +150 C TO-92 CASE 29 STYLE 22 1 12 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 357 C/W TL 300 C Maximum Lead Temperature for Soldering Purposes, 1/16 from case for 10 seconds G 3 STRAIGHT LEAD BULK PACK 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM AND PIN ASSIGNMENT Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2N 7000 AYWWG G 1 Source 2 Gate 3 Drain A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2007 October, 2007 - Rev. 7 1 Preferred devices are recommended choices for future use and best overall value. Publication Order Number: 2N7000/D 2N7000 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)DSS 60 - Vdc - 1.0 1.0 mAdc mAdc OFF CHARACTERISTICS (VGS = 0, ID = 10 mAdc) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current IDSS (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TJ = 125C) Gate-Body Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0) IGSSF - -10 nAdc (VDS = VGS, ID = 1.0 mAdc) VGS(th) 0.8 3.0 Vdc - 5.0 6.0 - 2.5 0.45 ON CHARACTERISTICS (Note 1) Gate Threshold Voltage Static Drain-Source On-Resistance W rDS(on) (VGS = 10 Vdc, ID = 0.5 Adc) (VGS = 4.5 Vdc, ID = 75 mAdc) Drain-Source On-Voltage VDS(on) (VGS = 10 Vdc, ID = 0.5 Adc) (VGS = 4.5 Vdc, ID = 75 mAdc) Vdc On-State Drain Current (VGS = 4.5 Vdc, VDS = 10 Vdc) Id(on) 75 - mAdc Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) gfs 100 - mmhos Ciss - 60 pF Coss - 25 Crss - 5.0 ton - 10 toff - 10 DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 1) Turn-On Delay Time Turn-Off Delay Time (VDD = 15 V, ID = 500 mA, RG = 25 W, RL = 30 W, Vgen = 10 V) ns 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. ORDERING INFORMATION Package Shipping TO-92 1000 Units / Bulk TO-92 (Pb-Free) 1000 Units / Bulk TO-92 2000 Tape & Reel 2N7000RLRAG TO-92 (Pb-Free) 2000 Tape & Reel 2N7000RLRMG TO-92 (Pb-Free) 2000 Tape & Ammo Box 2N7000RLRPG TO-92 (Pb-Free) 2000 Tape & Ammo Box Device 2N7000 2N7000G 2N7000RLRA For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 2N7000 2.0 1.0 VDS = 10 V TA = 25C 1.6 VGS = 10 V 1.4 9V 1.2 I D, DRAIN CURRENT (AMPS) I D, DRAIN CURRENT (AMPS) 1.8 8V 1.0 7V 0.8 6V 0.6 0.4 5V 0.2 4V 3V 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 9.0 0.8 125C 0.6 0.4 0.2 10 0 2.4 2.2 1.8 VGS = 10 V ID = 200 mA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -60 -20 +20 +60 T, TEMPERATURE (C) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 9.0 10 Figure 2. Transfer Characteristics VGS(th) , THRESHOLD VOLTAGE (NORMALIZED) r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) Figure 1. Ohmic Region 2.0 25C -55C +100 +140 1.2 1.05 VDS = VGS ID = 1.0 mA 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 -60 Figure 3. Temperature versus Static Drain-Source On-Resistance -20 +20 +60 T, TEMPERATURE (C) +100 Figure 4. Temperature versus Gate Threshold Voltage http://onsemi.com 3 +140 2N7000 PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. L SEATING PLANE K D X X G J H V C SECTION X-X 1 N DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- N A R BENT LEAD TAPE & REEL AMMO PACK B P NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. T SEATING PLANE K D X X G J V 1 C SECTION X-X DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --- N STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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