TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN-SWITCHIN SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 DEVICES LEVELS 2N2218 2N2218A 2N2218AL 2N2219 2N2219A 2N2219AL * Also available in Radiation Hardened versions. JAN JANTX JANTXV JANS * See datasheet for JANSR2N2218 & JANSR2N2219 ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol 2N2218 2N2219 2N221A; L 2N2219A; L Unit Collector-Emitter Voltage VCEO 30 50 Vdc Collector-Base Voltage VCBO 60 75 Vdc Emitter-Base Voltage VEBO 5.0 6.0 Vdc Collector Current Total Power Dissipation @ TA = +25C @ TC = +25C Operating & Storage Junction Temp. Range IC 800 mA PT 0.8 3.0 W W Top, Tstg -55 to +200 C Symbol Value Unit RJC 59 C/W THERMAL CHARACTERISTICS Parameters / Test Conditions Thermal Resistance, Junction-to-Case TO-39 (TO-205AD) 2N2218, 2N2218A 2N2219, 2N2219A Note: (1) Derate linearly 4.6mW/C above TA > +25C (2) Derate linearly 17.0mW/C above TC > +25C ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)CEO 30 50 Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IE = 10mAdc 2N2218; 2N2219 2N2218A; 2N2219A; L Emitter-Base Cutoff Current VEB = 5.0Vdc VEB = 6.0Vdc VEB = 4.0Vdc 2N2218; 2N2219 2N2218A; 2N2219A; L All Types Collector-Base Cutoff Current VCE = 30Vdc VCE = 50Vdc 2N2218; 2N2219 2N2218A; 2N2219A; L T4-LDS-0091 Rev. 1 (082523) IEBO ICES Vdc 10 10 10 Adc Adc 10 10 Adc TO-5 2N2218AL 2N2219AL Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN-SWITCHIN SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) (Con't) Parameters / Test Conditions Symbol Min. Max. Unit 10 10 10 10 Adc Adc Collector-Base Cutoff Current VCB = 50Vdc VCB = 60Vdc VCB = 60Vdc VCB = 75Vdc 2N2218; 2N2219 2N2218A; 2N2219A; L 2N2218; 2N2219 2N2218A; 2N2219A; L ICBO ON CHARACTERTICS (3) Forward-Current Transfer Ratio IC = 0.1mAdc, VCE = 10Vdc 2N2218 2N2219 2N2218A; 2N2218AL 2N2219A; 2N2219AL 20 35 30 50 IC = 1.0mAdc, VCE = 10Vdc 2N2218 2N2219 2N2218A; 2N2218AL 2N2219A; 2N2219AL 25 50 35 75 IC = 10mAdc, VCE = 10Vdc 2N2218 2N2219 2N2218A; 2N2218AL 2N2219A; 2N2219AL IC = 150mAdc, VCE = 10Vdc 2N2218; A; AL 2N2219; A; AL 40 100 IC = 500mAdc, VCE = 10Vdc 2N2218; A; AL 2N2219; A; AL 20 30 hFE 150 325 150 325 35 75 40 100 120 300 Collector-Emitter Saturation Voltage IC = 150mAdc, IB = 15mAdc 2N2218; 2N2219 2N2218A; 2N2219A; L IC = 500mAdc, IB = 50mAdc 2N2218; 2N2219 2N2218A; 2N2219A; L 0.4 0.3 Vdc VCE(sat) 1.6 1.0 Base-Emitter Saturation Voltage IC = 150mAdc, IB = 15mAdc 2N2218; 2N2219 2N2218A; 2N2219A; L 0.6 0.6 1.3 1.2 Vdc VBE(sat) IC = 500mAdc, IB = 50mAdc T4-LDS-0091 Rev. 1 (082523) 2N2218; 2N2219 2N2218A; 2N2219A; L 2.6 2.0 Page 2 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN-SWITCHIN SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. |hfe| 2.5 12 hfe 25 50 35 75 Unit Magnitude of Small-Signal Forward Current Transfer Ratio IC = 20mAdc, VCE = 20Vdc, f = 100MHz Small-Signal Forward Current Transfer Ratio IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz 2N2218 2N2219 2N2218A, L 2N2219A, L Output Capacitance VCB = 10Vdc, IE = 0, 100 kHz f 1.0MHz Cobo 8.0 pF Input Capacitance VEB = 0.5Vdc, IC = 0, 100 kHz f 1.0MHz Cibo 25 pF Max. Unit SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. VCC = 30Vdc; IC = 150mAdc; IB1 = 15mAdc Turn-On Time (See Figure 3 of MIL-PRF-19500/251) 2N2218, 2N2219 2N2218A, L, 2N2219A, L ton 40 35 s Turn-Off Time (See Figure 4 of MIL-PRF-19500/251) 2N2218, 2N2219 2N2218A, L, 2N2219A, L toff 250 300 s (3) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%. T4-LDS-0091 Rev. 1 (082523) Page 3 of 3