TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
NPN-SWITCHIN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/251
T4-LDS-0091 Rev. 1 (082523) Page 1 of 3
DEVICES LEVELS
2N2218 2N2219 JAN
2N2218A 2N2219A JANTX
2N2218AL 2N2219AL JANTXV
JANS *
* Also available in Radiation Hardened versions. See datasheet for JANSR2N2218 &
JANSR2N2219
ABSOLUTE MAXIMUM RATI NG S (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol 2N2218
2N2219 2N221A; L
2N2219A; L Unit
Collector-Emitter Voltage VCEO 30 50 Vdc
Collector-Base Voltage VCBO 60 75 Vdc
Emitter-Base Voltage VEBO 5.0 6.0 Vdc
Collector Current IC 800 mA
Total Power Dissipation @ TA = +25°C
@ TC = +25°C PT 0.8
3.0 W
W
Operating & Storage Junction Temp. Range Top, Tstg -55 to +200 °C
THERMAL CHARACTERISTICS
Parameters / Test Conditions Symbol Value Unit
Thermal Resistance, Junction-to-Case RθJC 59 °C/W
Note: (1) Derate linearly 4.6mW/°C above TA > +25°C
(2) Derate linearly 17.0mW/°C above TC > +25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IE = 10mAdc 2N2218; 2N2219
2N2218A; 2N2219A; L V(BR)CEO 30
50 Vdc
Emitter-Base Cutoff Current
VEB = 5.0Vdc
VEB = 6.0Vdc
VEB = 4.0Vdc
2N2218; 2N2219
2N2218A; 2N2219A; L
All Types
IEBO
10
10
10
μAdc
ηAdc
Collector-Base Cutoff Current
VCE = 30Vdc
VCE = 50Vdc
2N2218; 2N2219
2N2218A; 2N2219A; L ICES
10
10 ηAdc
TO-39 (TO-205AD)
2N2218, 2N2 218A
2N2219, 2N2 219A
TO-5
2N2218AL
2N2219AL