TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
NPN-SWITCHIN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/251
T4-LDS-0091 Rev. 1 (082523) Page 1 of 3
DEVICES LEVELS
2N2218 2N2219 JAN
2N2218A 2N2219A JANTX
2N2218AL 2N2219AL JANTXV
JANS *
* Also available in Radiation Hardened versions. See datasheet for JANSR2N2218 &
JANSR2N2219
ABSOLUTE MAXIMUM RATI NG S (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol 2N2218
2N2219 2N221A; L
2N2219A; L Unit
Collector-Emitter Voltage VCEO 30 50 Vdc
Collector-Base Voltage VCBO 60 75 Vdc
Emitter-Base Voltage VEBO 5.0 6.0 Vdc
Collector Current IC 800 mA
Total Power Dissipation @ TA = +25°C
@ TC = +25°C PT 0.8
3.0 W
W
Operating & Storage Junction Temp. Range Top, Tstg -55 to +200 °C
THERMAL CHARACTERISTICS
Parameters / Test Conditions Symbol Value Unit
Thermal Resistance, Junction-to-Case RθJC 59 °C/W
Note: (1) Derate linearly 4.6mW/°C above TA > +25°C
(2) Derate linearly 17.0mW/°C above TC > +25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IE = 10mAdc 2N2218; 2N2219
2N2218A; 2N2219A; L V(BR)CEO 30
50 Vdc
Emitter-Base Cutoff Current
VEB = 5.0Vdc
VEB = 6.0Vdc
VEB = 4.0Vdc
2N2218; 2N2219
2N2218A; 2N2219A; L
All Types
IEBO
10
10
10
μAdc
ηAdc
Collector-Base Cutoff Current
VCE = 30Vdc
VCE = 50Vdc
2N2218; 2N2219
2N2218A; 2N2219A; L ICES
10
10 ηAdc
TO-39 (TO-205AD)
2N2218, 2N2 218A
2N2219, 2N2 219A
TO-5
2N2218AL
2N2219AL
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
NPN-SWITCHIN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/251
T4-LDS-0091 Rev. 1 (082523) Page 2 of 3
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (Con’t)
Parameters / Test Conditions Symbol Min. Max. Unit
Collector-Base Cutoff Current
VCB = 50Vdc
VCB = 60Vdc
VCB = 60Vdc
VCB = 75Vdc
2N2218; 2N2219
2N2218A; 2N2219A; L
2N2218; 2N2219
2N2218A; 2N2219A; L
ICBO
10
10
10
10
ηAdc
μAdc
ON CHARACTERTICS (3)
Forward-Current Transfer Ratio
IC = 0.1mAdc, VCE = 10Vdc 2N2218
2N2219
2N2218A; 2N2218AL
2N2219A; 2N2219AL
20
35
30
50
IC = 1.0mAdc, VCE = 10Vdc 2N2218
2N2219
2N2218A; 2N2218AL
2N2219A; 2N2219AL
25
50
35
75
150
325
150
325
IC = 10mAdc, VCE = 10Vdc 2N2218
2N2219
2N2218A; 2N2218AL
2N2219A; 2N2219AL
35
75
40
100
IC = 150mAdc, VCE = 10Vdc 2N2218; A; AL
2N2219; A; AL 40
100 120
300
IC = 500mAdc, VCE = 10Vdc 2N2218; A; AL
2N2219; A; AL
hFE
20
30
Collector-Emitter Saturation Voltage
IC = 150mAdc, IB = 15mAdc 2N2218; 2N2219
2N2218A; 2N2219A; L 0.4
0.3
IC = 500mAdc, IB = 50mAdc 2N2218; 2N2219
2N2218A; 2N2219A; L
VCE(sat) 1.6
1.0
Vdc
Base-Emitter Saturation Voltage
IC = 150mAdc, IB = 15mAdc 2N2218; 2N2219
2N2218A; 2N2219A; L 0.6
0.6 1.3
1.2
IC = 500mAdc, IB = 50mAdc 2N2218; 2N2219
2N2218A; 2N2219A; L
VBE(sat)
2.6
2.0
Vdc
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
NPN-SWITCHIN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/251
T4-LDS-0091 Rev. 1 (082523) Page 3 of 3
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Magnitude of Small-Signal Forward Current Transfer Ratio
IC = 20mAdc, VCE = 20Vdc, f = 100MHz |hfe| 2.5 12
Small-Signal Forward Current Transfer Ratio
IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz 2N2218
2N2219
2N2218A, L
2N2219A, L
hfe 25
50
35
75
Output Capacitance
VCB = 10Vdc, IE = 0, 100 kHz f 1.0MHz Cobo 8.0 pF
Input Capacitance
VEB = 0.5Vdc, IC = 0, 100 kHz f 1.0MHz Cibo 25 pF
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
VCC = 30Vdc; IC = 150mAdc; IB1 = 15mAdc
Turn-On Time
(See Figure 3 of MIL-PRF-19500/251)
2N2218, 2N2219
2N2218A, L, 2N2219A, L
ton
40
35
ηs
Turn-Off Time
(See Figure 4 of MIL-PRF-19500/251)
2N2218, 2N2219
2N2218A, L, 2N2219A, L
toff
250
300
ηs
(3) Pulse Test: Pulse Width = 300μs, Duty Cycle 2.0%.