FGPF30N45T tm 450V, 30A PDP Trench IGBT Features General Description * High Current Capability Using Novel Trench IGBT Technology, Fairchild's new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. * Low saturation voltage: VCE(sat) =1.55V @ IC = 30A * High input impedance * Fast switching * RoHS complaint Applications * PDP System C TO-220F 1 1.Gate 2.Collector G 3.Emitter E Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 450 V VGES Gate to Emitter Voltage 30 V 120 A ICM (1) PD @ TC = 25oC Maximum Power Dissipation @ TC = 25oC Maximum Power Dissipation @ TC = 100oC Pulsed Collector Current 50.4 W 20.1 W TJ Operating Junction Temperature -55 to +150 oC Tstg Storage Temperature Range -55 to +150 oC TL Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds o 300 C Notes: 1: Repetitive test , Pulse width=100usec , Duty=0.1 * Ic_pluse limited by max Tj Thermal Characteristics Symbol Parameter Typ. Max. Units RJC(IGBT) Thermal Resistance, Junction to Case - 2.48 o RJA Thermal Resistance, Junction to Ambient - 62.5 oC/W (c)2007 Fairchild Semiconductor Corporation FGPF30N45T Rev. A 1 C/W www.fairchildsemi.com FGPF30N45T 450V, 30A PDP Trench IGBT December 2007 Device Marking Device Package Packaging Type FGPF30N45T FGFP30N45TTU TO-220F Rail / Tube Electrical Characteristics of the IGBT Symbol Parameter Max Qty Qty per Tube per Box 50ea - TC = 25C unless otherwise noted Test Conditions Min. Typ. Max. Units 450 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A BVCES TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250A - 0.5 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 100 A IGES G-E Leakage Current VGE = VGES, VCE = 0V - - 400 nA IC = 250A, VCE = VGE 3.0 4.5 5.5 V On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage IC = 20A, VGE = 15V - 1.35 1.6 IC = 30A, VGE = 15V - 1.55 - V IC = 30A, VGE = 15V, TC = 125oC - 1.53 - V - 1610 - pF VCE = 30V, VGE = 0V, f = 1MHz - 88 - pF - 68 - pF - 19 - ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge FGPF30N45T Rev. A VCC = 200V, IC = 30A, RG = 15, VGE = 15V, Resistive Load, TC = 25oC VCC = 200V, IC = 30A, RG = 15, VGE = 15V, Resistive Load, TC = 125oC VCE = 200V, IC = 30A, VGE = 15V 2 - 57 - ns - 119 - ns - 220 330 ns - 20 - ns - 60 - ns - 122 - ns - 265 - ns - 73 - nC - 11 - nC - 33 - nC www.fairchildsemi.com FGPF30N45T 450V, 30A PDP Trench IGBT Package Marking and Ordering Information Figure 1. Typical Output Characteristics 120 Figure 2. Typical Output Characteristics 120 o TC = 25 C o TC = 125 C 20V 20V 15V 12V 12V Collector Current, IC [A] Collector Current, IC [A] 15V 10V 80 40 VGE = 8V 80 VGE = 8V 40 0 0 0 2 4 Collector-Emitter Voltage, VCE [V] 6 0 Figure 3. Typical Saturation Voltage Characteristics 6 120 Common Emitter VCE = 20V Common Emitter VGE = 15V o Collector Current, IC [A] o Collector Current, IC [A] 2 4 Collector-Emitter Voltage, VCE [V] Figure 4. Transfer Characteristics 120 TC = 25 C o TC = 125 C 80 40 TC = 25 C o TC = 125 C 80 40 0 0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 0 4 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] 1.6 30A 1.4 20A 1.2 IC = 10A 12 3 Common Emitter o TC = 25 C 16 12 8 4 20A IC = 10A 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] FGPF30N45T Rev. A 4 6 8 10 Gate-Emitter Voltage,VGE [V] 20 Common Emitter VGE = 15V 1.0 25 2 Figure 6. Saturation Voltage vs. VGE 1.8 Collector-Emitter Voltage, VCE [V] 10V 0 30A 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGPF30N45T 450V, 30A PDP Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics 20 10000 Common Emitter Cies Coes Capacitance [pF] Collector-Emitter Voltage, VCE [V] o TC = 125 C 16 12 8 1000 Cres 100 20A 4 Common Emitter VGE = 0V, f = 1MHz 30A IC = 10A o TC = 25 C 0 10 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 1 20 Figure 9. Gate charge Characteristics 500 Common Emitter IC MAX (Pulse) o TC = 25 C 10s 100 12 VCC = 100V Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] 30 Figure 10. SOA Characteristics 15 200V 9 6 3 0 0 10 Collector-Emitter Voltage, VCE [V] 20 40 60 Gate Charge, Qg [nC] 100s 10 1ms 10 ms 1 IC MAX (Continuous) Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 0.1 DC Operation 0.01 80 1 Figure 11. Turn-on Characteristics vs. Gate Resistance 10 100 Collector-Emitter Voltage, VCE [V] 1000 Figure 12. Turn-off Characteristics vs. Gate Resistance 1000 500 tf Switching Time [ns] Switching Time [ns] 100 tr td(on) 10 Common Emitter VCC = 200V, VGE = 15V IC = 30A td(off) 100 Common Emitter VCC = 200V, VGE = 15V IC = 30A o TC = 25 C o TC = 25 C o TC = 125 C o 1 0 10 20 30 40 50 0 Gate Resistance, RG [] FGPF30N45T Rev. A TC = 125 C 10 10 20 30 40 50 Gate Resistance, RG [] 4 www.fairchildsemi.com FGPF30N45T 450V, 30A PDP Trench IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current 200 Figure 14. Turn-off Characteristics vs. Collector Current 500 Common Emitter VGE = 15V, RG = 15 o TC = 25 C 100 tf o Switching Time [ns] Switching Time [ns] TC = 125 C tr 100 td(off) Common Emitter VGE = 15V, RG = 15 o TC = 25 C td(on) o TC = 125 C 10 5 10 15 20 25 10 30 5 10 Collector Current, IC [A] Figure 15. Switching Loss vs. Gate Resistance 25 30 1000 Switching Loss [J] Eoff 100 Eon Common Emitter VCC = 200V, VGE = 15V IC = 30A Eoff 100 Eon 10 Common Emitter VGE = 15V, RG = 15 o o TC = 25 C TC = 25 C o o TC = 125 C TC = 125 C 10 20 Figure 16. Switching Loss vs.Gate Resistance 1000 Switching Loss [J] 15 Collector Current, IC [A] 1 0 10 20 30 40 50 10 5 Gate Resistance, RG [] 20 30 Collector Current, IC [A] Figure 17. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 10 0.5 1 0.1 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 Rectangular Pulse Duration [sec] FGPF30N45T Rev. A 5 www.fairchildsemi.com FGPF30N45T 450V, 30A PDP Trench IGBT Typical Performance Characteristics FGPF30N45T 450V, 30A PDP Trench IGBT Mechanical Dimensions 3.30 0.10 TO-220F 10.16 0.20 2.54 0.20 o3.18 0.10 (7.00) (1.00x45) 15.87 0.20 15.80 0.20 6.68 0.20 (0.70) 0.80 0.10 0 (3 9.75 0.30 MAX1.47 ) #1 +0.10 0.50 -0.05 2.54TYP [2.54 0.20] 2.76 0.20 2.54TYP [2.54 0.20] 9.40 0.20 4.70 0.20 0.35 0.10 Dimensions in Millimeters FGPF30N45T Rev. A 6 www.fairchildsemi.com The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 FGPF30N45T Rev. A 7 www.fairchildsemi.com FGPF30N45T 450V, 30A PDP Trench IGBT TRADEMARKS